机构

• 苏州纳米技术与纳米仿... [5]
• 武汉植物园 [3]

采集方式

• OAI收割 [8]

内容类型

• 期刊论文 [8]

发表日期

• 2020 [3]
• 2018 [2]
• 2017 [3]

学科主题

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The sucrose transporter MdSUT4.1 participates in the regulation of fruit sugar accumulation in apple 期刊论文  OAI收割 BMC Plant Biology, 2020, 卷号: 20, 期号: 1 作者:  Peng,Qian;  Cai,Yaming;  Lai,Enhui;  Nakamura,Masayoshi;  Liao,Liao   |  收藏  |  浏览/下载：47/0  |  提交时间：2020/10/04 Malus x domestica  Gene-tagged marker  SUT  Tonoplast localization  Fruit sweetness   Analysis of sorbitol content variation in wild and cultivated apples 期刊论文  OAI收割 JOURNAL OF THE SCIENCE OF FOOD AND AGRICULTURE, 2020, 卷号: 100, 期号: 1, 页码: 139-144 作者:  Fang, Ting;  Cai, Yaming;  Yang, Qiurui;  Ogutu, Collins O.;  Liao, Liao   |  收藏  |  浏览/下载：32/0  |  提交时间：2020/10/04 Malus  sorbitol  SDH1  fruit taste  fruit size   Development of a fast and efficient root transgenic system for functional genomics and genetic engineering in peach 期刊论文  OAI收割 scientificreports, 2020, 卷号: 10, 期号: 1, 页码: 1 作者:  Shengli Xu;  Enhui Lai;  Lei Zhao;  Yaming Cai;  Collins Ogutu   |  收藏  |  浏览/下载：47/0  |  提交时间：2020/10/04 Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs 期刊论文  OAI收割 AIP ADVANCES, 2018 作者:  Fan, Yaming(范亚明);  Song, Liang(宋亮);  Cai, Yong(蔡勇);  Zhang, Baoshun(张宝顺);  Zhao, Jie   |  收藏  |  浏览/下载：72/0  |  提交时间：2019/03/27 Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress 期刊论文  OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018 作者:  Zhang, Baoshun(张宝顺);  Fan, Yaming(范亚明);  Hao, Ronghui(郝荣晖);  Yu, Guohao(于国浩);  Zhao, Jie   |  收藏  |  浏览/下载：55/0  |  提交时间：2019/03/27 Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2017 作者:  Hao, Ronghui;  Li, Weiyi;  Fu, Kai（付凯）;  Yu, Guohao;  Song, Liang   |  收藏  |  浏览/下载：54/0  |  提交时间：2018/02/05 AlGaN/GaN MIS-HEMTs of Very-Low Vth Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2017 作者:  Zhang, Zhili（张志利）;  Li, Weiyi;  Fu, Kai（付凯）;  Yu, Guohao（于国浩）;  Zhang, Xiaodong（张晓东）   |  收藏  |  浏览/下载：33/0  |  提交时间：2018/02/05 Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate 期刊论文  OAI收割 SOLID-STATE ELECTRONICS, 2017 作者:  Zhang, Zhili（张志利）;  Song, Liang;  Li, Weiyi;  Fu, Kai（付凯）;  Yu, Guohao（于国浩）   |  收藏  |  浏览/下载：49/0  |  提交时间：2018/02/05