机构

• 上海微系统与信息技术... [4]

采集方式

• OAI收割 [4]

内容类型

• 期刊论文 [4]

发表日期

• 2000 [2]
• 1999 [2]

学科主题

• Instrument... [1]
• Materials ... [1]
• Materials ... [1]
• Multidisci... [1]
• Physics, A... [1]

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Structural and electrical characteristics of oxygen-implanted 6H-SiC 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 卷号: 169, 页码: 1-5 Wang, LW; Huang, JP; Duo, XZ; Song, ZT; Lin, CL; Zetterling, CM; Ostling, M 收藏  |  浏览/下载：21/0  |  提交时间：2012/03/24 ENHANCED THERMAL-OXIDATION  SILICON-CARBIDE  ION-IMPLANTATION  AMORPHIZATION  LAYERS   Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen 期刊论文  OAI收割 JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 卷号: 33, 期号: 12, 页码: 1551-1555 Wang, LW; Huang, JP; Duo, XZ; Song, ZT; Lin, CL; Zetterling, CM; Ostling, M 收藏  |  浏览/下载：17/0  |  提交时间：2012/03/24 ENHANCED THERMAL-OXIDATION  ION-IMPLANTATION  SILICON-CARBIDE  AMORPHIZATION  LAYERS   Growth of SiC thin films on (100) and (111) silicon by pulsed laser deposition combined with a vacuum annealing process 期刊论文  OAI收割 WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 卷号: 572, 页码: 207-212 Huang, JP; Wang, LW; Wen, U; Wang, YX; Lin, CL; Zetterling, CM; Ostling, M 收藏  |  浏览/下载：18/0  |  提交时间：2012/03/25 CHEMICAL-VAPOR-DEPOSITION  CARBIDE  TEMPERATURE  DEVICES   A study of optical characteristics of damage in oxygen-implanted 6H-SiC 期刊论文  OAI收割 JOURNAL OF MATERIALS SCIENCE LETTERS, 1999, 卷号: 18, 期号: 12, 页码: 979-982 Wang,LW; Huang,JP; Lin,CL; Zou,SC; Zheng,YX; Wang,XJ; Huang,DM; Zetterling,CM; Ostling,M 收藏  |  浏览/下载：29/0  |  提交时间：2012/03/25 ENHANCED THERMAL-OXIDATION  SILICON-CARBIDE  ION-IMPLANTATION  THIN-FILMS  AMORPHIZATION  LAYERS