中国科学院机构知识库网格系统: 检索

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	High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET 期刊论文 OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 卷号: 67, 期号: 10, 页码: 4046-4053 作者: Zhanwei Shen; Feng Zhang ; Member; IEEE; Guoguo Yan; Zhengxin Wen; Wanshun Zhao; Lei Wang; Xingfang Liu; Guosheng Sun; Yiping Zeng \| 收藏 \| 浏览/下载：31/0 \| 提交时间：2021/05/24
	The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition 期刊论文 OAI收割 Materials Science in Semiconductor Processing, 2019, 卷号: 94, 页码: 107-115 作者: Jun Chen ; Bowen Lv ; Feng Zhang ; Yinshu Wang ; Xingfang Liu ; Guoguo Yan ; Zhanwei Shen ; Zhengxin Wen ; Lei Wang ; Wanshun Zhao ; Guosheng Sun ; Chao Liu ; Yiping Zeng \| 收藏 \| 浏览/下载：27/0 \| 提交时间：2020/07/31
	Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures 期刊论文 OAI收割 Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102 作者: Huang Huolin; Sun Zhonghao; Cao Yaqing; Li Feiyu; Zhang Feng; Wen Zhengxin; Zhang Zifeng; Liang Yung C.; Hu Lizhong \| 收藏 \| 浏览/下载：24/0 \| 提交时间：2019/11/15
	A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region 期刊论文 OAI收割 IEEE ELECTRON DEVICE LETTERS, 2017, 卷号: 38, 期号: 7, 页码: 941-944 作者: Zhengxin Wen; Feng Zhang; Member; IEEE; Zhanwei Shen 收藏 \| 浏览/下载：46/0 \| 提交时间：2018/06/01