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Improved carrier confinement and stimulated recombination rate in GaN-based vertical-cavity surface-emitting lasers with buried p-AlGaN inversion layer
期刊论文
OAI收割
SUPERLATTICES AND MICROSTRUCTURES, 2020, 卷号: 146
作者:
Cui, Mei
;
Gao, Yuanbin
;
Hang, Sheng
;
Qiu, Xuejiao
;
Zhang, Yonghui
  |  
收藏
  |  
浏览/下载:42/0
  |  
提交时间:2020/12/16
EFFICIENCY
TRANSPORT
MECHANISM
VCSELS
Vertical-cavity surface-emitting lasers for data communication and sensing
期刊论文
OAI收割
Photonics Research, 2019, 卷号: 7, 期号: 2, 页码: 121-136
作者:
A.J.Liu
;
P.Wolf
;
J.A.Lott
;
D.Bimberg
  |  
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2020/08/24
operating error-free,850 nm vcsels,high-speed vcsels,photonic-crystal,single-mode,high-efficiency,silicon photonics
1.3-mu m in(ga)as quantum-dot vcsels fabricated by dielectric-free approach with surface-relief process
期刊论文
iSwitch采集
Ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93
作者:
Xu, D. W.
;
Yoon, S. F.
;
Ding, Y.
;
Tong, C. Z.
;
Fan, W. J.
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2019/05/12
Dielectric-free approach
Quantum dot (qd)
Surface-relief technique
Vertical-cavity surface-emitting lasers (vcsels)
Graded index profiles and loss-induced single-mode characteristics in vertical-cavity surface-emitting lasers with petal-shape holey structure
期刊论文
OAI收割
chinese physics b, 2011, 卷号: 20, 期号: 2, 页码: article no.24204
作者:
Jiang B
收藏
  |  
浏览/下载:74/7
  |  
提交时间:2011/07/06
vertical-cavity surface-emitting lasers
single mode
low divergence angle
graded index profile
OPTICAL INTERCONNECTS
QUANTUM-DOT
WAVE-GUIDE
VCSELS
POWER
FIELD
OPERATION
OXIDATION
DESIGN
FIBERS
1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process
期刊论文
OAI收割
ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93
Xu DW
;
Yoon SF
;
Ding Y
;
Tong CZ
;
Fan WJ
;
Zhao LJ
收藏
  |  
浏览/下载:121/2
  |  
提交时间:2011/07/05
Dielectric-free approach
quantum dot (QD)
surface-relief technique
vertical-cavity surface-emitting lasers (VCSELs)
EMITTING LASERS
Small-signal equivalent-circuit model and characterization of 1.55-mu m buried tunnel junction vertical-cavity surface-emitting lasers
期刊论文
iSwitch采集
Ieee transactions on microwave theory and techniques, 2010, 卷号: 58, 期号: 5, 页码: 1283-1289
作者:
Zhu, Ning Hua
;
Xu, Gui Zhi
;
Hofmann, Werner
;
Chen, Wei
;
Boehm, Gerhard
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2019/05/12
Equivalent-circuit model
Optical modulation
Scattering parameters
Semiconductor lasers
Vertical-cavity surface-emitting lasers (vcsels)
Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers
期刊论文
OAI收割
ieee transactions on microwave theory and techniques, 2010, 卷号: 58, 期号: 5, 页码: 1283-1289
Zhu NH (Zhu Ning Hua)
;
Xu GZ (Xu Gui Zhi)
;
Hofmann W (Hofmann Werner)
;
Chen W (Chen Wei)
;
Bohm G (Boehm Gerhard)
;
Liu
;
Y (Liu Yu)
;
Wang X (Wang Xin)
;
Xie L (Xie Liang)
;
Amann MC (Amann Markus-Christian)
收藏
  |  
浏览/下载:127/1
  |  
提交时间:2010/06/04
Equivalent-circuit model
optical modulation
scattering parameters
semiconductor lasers
vertical-cavity surface-emitting lasers (VCSELs)
A Single-Fundamental-Mode Photonic Crystal Vertical Cavity Surface Emitting Laser
期刊论文
OAI收割
chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 024206
Xie YY (Xie Yi-Yang)
;
Xu C (Xu Chen)
;
Kan Q (Kan Qiang)
;
Wang CX (Wang Chun-Xia)
;
Liu YM (Liu Ying-Ming)
;
Wang BQ (Wang Bao-Qiang)
;
Cheng HD (Cheng Hong-Da)
;
Shen GD (Shen Guang-Di)
收藏
  |  
浏览/下载:80/2
  |  
提交时间:2010/04/13
OUTPUT POWER
VCSELS
RELIEF
A novel photonic crystal vertical cavity surface emitting laser based on coherent coupling
期刊论文
OAI收割
chinese science bulletin, 2010, 卷号: 55, 期号: 2, 页码: 111-113
Liu AJ (Liu AnJin)
;
Qu HW (Qu HongWei)
;
Xing MX (Xing MingXin)
;
Chen W (Chen Wei)
;
Zhou WJ (Zhou WenJun)
;
Zheng WH (Zheng WanHua)
收藏
  |  
浏览/下载:170/28
  |  
提交时间:2010/04/13
photonic crystal
vertical cavity surface emitting laser
coherent coupling
divergence angle
single mode
SINGLE-MODE
HIGH-POWER
HOLEY STRUCTURE
WAVELENGTH
TRANSVERSE
RELIEF
VCSELS
Self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers
期刊论文
OAI收割
journal of applied physics, 2010, 卷号: 107, 期号: 6, 页码: art. no. 063107
Xu DW
;
Tong CZ
;
Yoon SF
;
Zhao LJ
;
Ding Y
;
Fan WJ
收藏
  |  
浏览/下载:138/19
  |  
提交时间:2010/04/28
gallium arsenide
III-V semiconductors
indium compounds
quantum dot lasers
surface emitting lasers
DEPENDENT OUTPUT CHARACTERISTICS
SEMICONDUCTOR-LASERS
1.3-MU-M
VCSELS
WELL
CONFINEMENT
POWER