机构

• 长春光学精密机械与物... [2]
• 金属研究所 [1]
• 化学研究所 [1]
• 过程工程研究所 [1]
• 广州能源研究所 [1]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [5]
• 会议论文 [1]

发表日期

• 2022 [1]
• 2021 [2]
• 2018 [1]
• 2017 [1]
• 2005 [1]

学科主题

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Carrier Trapping in Wrinkled 2D Monolayer MoS2 for Ultrathin Memory 期刊论文  OAI收割 ACS NANO, 2022, 卷号: 16, 期号: 4, 页码: 6309-6316 作者:  Zhang, Rongjie;  Lai, Yongjue;  Chen, Wenjun;  Teng, Changjiu;  Sun, Yujie   |  收藏  |  浏览/下载：89/0  |  提交时间：2022/09/16    2D materials  monolayer  MoS 2  wrinkles  memory  carrier trapping  conductive AFM   Advances in Functionalized Carriers Based on Graphene's Unique Biological Interface Effect 期刊论文  OAI收割 ACTA CHIMICA SINICA, 2021, 卷号: 79, 期号: 10, 页码: 1244-1256 作者:  Yue, Hua;  Ma, Guanghui   |  收藏  |  浏览/下载：35/0  |  提交时间：2022/06/15 graphene  biological interface effect  2D carrier  drug delivery  vaccine adjuvant   Multiple-Ring Aromatic Spacer Cation Tailored Interlayer Interaction for Efficient and Air-Stable Ruddlesden-Popper Perovskite Solar Cells 期刊论文  OAI收割 SOLAR RRL, 2021, 页码: 8 作者:  Liu, Chang;  Liu, Rui;  Bi, Zhuoneng;  Yu, Yue;  Xu, Gang   |  收藏  |  浏览/下载：48/0  |  提交时间：2021/10/27 air stable solar cells  charge carrier transport  interlayer interaction  2D Ruddlesden-Popper perovskites   2D Phosphorene_ Epitaxial Growth and Interface Engineering for Electronic Devices 期刊论文  OAI收割 Advanced Materials, 2018, 卷号: 30, 期号: 47, 页码: 11 作者:  Zhang, J. L.;  Han, C.;  Hu, Z. H.;  Wang, L.;  Liu, L.   |  收藏  |  浏览/下载：23/0  |  提交时间：2019/09/17 2D phosphorene  electronic devices  epitaxial growth  interface  engineering  layer black phosphorus  2-dimensional materials  band-gap  transport-properties  carrier mobility  blue phosphorus  graphene  surface  functionalization  semiconductors  Chemistry  Science & Technology - Other Topics  Materials Science  Physics   Intrinsic Charge Transport in Stanene: Roles of Bucklings and Electron-Phonon Couplings 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2017, 卷号: 3, 期号: 11 作者:  Nakamura, Yuma;  Zhao, Tianqi;  Xi, Jinyang;  Shi, Wen;  Wang, Dong   |  收藏  |  浏览/下载：49/0  |  提交时间：2019/04/09 2d Materials  Carrier Mobility Calculations  Density Functional Perturbation Theory  Electron-phonon Couplings  Stanene   Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏  |  浏览/下载：43/0  |  提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.