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• 上海微系统与信息技术... [3]
• 长春光学精密机械与物... [2]
• 福建物质结构研究所 [2]
• 半导体研究所 [2]
• 近代物理研究所 [1]

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• OAI收割 [10]

内容类型

• 期刊论文 [8]
• 会议论文 [2]

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• 2020 [1]
• 2010 [1]
• 2009 [3]
• 2007 [3]
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• 2003 [1]
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• Physics, M... [2]
• Engineerin... [1]
• 光电子学 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共10条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Development and beam commissioning of a continuous-wave four-vane heavy ion radio-frequency quadrupole accelerator based on stable operation 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2020, 卷号: 949, 页码: 12 作者:  Ma, Wei;  Lu, Liang;  Sun, Lie-Peng;  Yang, Yao;  Sun, Liang-Ting   |  收藏  |  浏览/下载：39/0  |  提交时间：2022/01/19 CW RFQ  Stable operation  Conditioning  Beam commissioning   Power calculation of wavelength tunable Yb3+:LSO laser 期刊论文  OAI收割 Optics Express, 2010, 卷号: 18, 期号: 20, 页码: 20979-20987 Z. Y. Huang, G. M. Li and Y. S. Qiu 收藏  |  浏览/下载：41/0  |  提交时间：2012/11/02 injected ring cavity  crystals  operation  amplifier  cw   Efficient 805 nm diode-pumped continuous-wave 1.9 mu m Tm3+ : NaLa(MoO4)(2) laser 期刊论文  OAI收割 Journal of Physics D-Applied Physics, 2009, 卷号: 42, 期号: 20 Y. J. Chen, Y. F. Lin, X. H. Gong, Z. D. Luo, W. J. Guo and Y. D. Huang 收藏  |  浏览/下载：16/0  |  提交时间：2012/11/06 single-crystals  fiber laser  growth  operation  conversion  cw   Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 6, 页码: 64211-64211 Chen, T; Hong, T; Pan, JQ; Chen, WX; Cheng, YB; Wang, Y; Ma, XB; Liu, WL; Zhao, LJ; Ran, GZ; Wang, W; Qin, GG 收藏  |  浏览/下载：16/0  |  提交时间：2012/03/24 CHEMICAL VAPOR-DEPOSITION  WAVE-GUIDE CIRCUIT  DOUBLE HETEROSTRUCTURES  SILICON SUBSTRATE  CW OPERATION  WAFER  DEVICES  FILMS   Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding 期刊论文  OAI收割 chinese physics letters, 2009, 卷号: 26, 期号: 6, 页码: art. no. 064211 作者:  Wang Y;  Pan JQ 收藏  |  浏览/下载：121/0  |  提交时间：2010/03/08 CHEMICAL VAPOR-DEPOSITION  WAVE-GUIDE CIRCUIT  DOUBLE HETEROSTRUCTURES  SILICON SUBSTRATE  CW OPERATION  WAFER  DEVICES  FILMS   Large aperture low threshold current 980nmVCSELs fabricated with pulsed anodic oxidation (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China Jinjiang C.; Yongqiang N.; Te L.; Guangyu L.; Yan Z.; Biao P.; Yanfang S.; Lijun W. 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25 Pulsed anodic oxidation technique  a new way of forming current blocking layers  was successfully used in ridge-waveguide QW laser fabrication. We apply this method in 980nm VCSELs fabrication to form a high-quality native oxide current blocking layer  which simplify the device process. A significant reduction of threshold current and a distinguished device performance are achieved. The 500m-diameter device has a current threshold as low as 0.48W. The maximum CW operation output power at room temperature is 1.48W. The lateral divergence angle //and vertical divergence angle are as low as 15.3 and 13.8 without side-lobes at a current of 6A.   High power VCSEL device with periodic gain active region (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China 作者:  Zhang Y.;  Liu Y.;  Liu Y.;  Liu Y.;  Qin L. 收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25 High power vertical cavity surface emitting lasers with large aperture have been fabricated through improving passivation  lateral oxidation and heat dissipation techniques. Different from conventional three quantum well structure  a periodic gain active region with nine quantum wells was incorporated into the VCSEL structure  with which high efficiency and high power operation were expected. The nine quantum wells were divided into three groups with each of them located at the antinodes of the cavity to enhance the coupling between the optical field and the gain region. Large aperture and bottom-emitting configuration was used to improve the beam quality and the heat dissipation. A maximum output power of 1.4W was demonstrated at CW operation for a 400m-diameter device. The lasing wavelength shifted to 995.5nm with a FWHM of 2nm at a current of 4.8A due to the internal heating and the absence of active water cooling. A ring-shape farfield pattern was induced by the non-homogeneous lateral current distribution in large diameter device. The light intensity at the center of the ring increased with increasing current. A symmetric round light spot at the center and single transverse mode operation with a divergence angle of 16 were observed with current beyond 4.8A.   High performance 1689-nm quantum well diode lasers 期刊论文  OAI收割 chinese optics letters, 2007, 卷号: 5, 期号: 10, 页码: 585-587 Duan, YP; Lin, T; Wang, CL; Chong, F; Ma, XY 收藏  |  浏览/下载：64/6  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  MU-M  ROOM-TEMPERATURE  HIGH-POWER  OPERATION  CW   Optimal design of the active regions for InGaAsSb/AlGaAsSb long wavelength multi quantum well lasers 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2004, 卷号: 53, 期号: 1, 页码: 218-225 Xu, GY; Li, AZ 收藏  |  浏览/下载：21/0  |  提交时间：2012/03/24 TEMPERATURE CW-OPERATION  QW DIODE-LASERS  MU-M  BAND-STRUCTURE  OPTICAL GAIN  ALGAASSB  GASB  ALLOYS   Optical gain of InGaAsSb/AlGaAsSb type-I long wavelength quantum-well lasers 期刊论文  OAI收割 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 卷号: 18, 期号: 9, 页码: 827-833 Xu, GY; Li, AZ 收藏  |  浏览/下载：16/0  |  提交时间：2012/03/24 TEMPERATURE CW-OPERATION  QW DIODE-LASERS  MU-M  BAND-STRUCTURE  ALGAASSB  GASB  ALLOYS