机构

• 半导体研究所 [4]
• 物理研究所 [2]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [6]
• iSwitch采集 [1]

内容类型

• 期刊论文 [6]
• 会议论文 [1]

发表日期

• 2012 [1]
• 2010 [1]
• 2001 [2]
• 2000 [1]
• 1996 [1]
• 1992 [1]
• 更多

学科主题

• 半导体物理 [2]
• 半导体材料 [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 High pressure neutron and synchrotron X-ray diffraction studies of tetragonal LaFeAsO0.9F0.1 期刊论文  OAI收割 HIGH PRESSURE RESEARCH, 2012, 卷号: 32, 期号: 3, 页码: 405 Zhu, JL; Lin, ZJ; Zhang, JZ; Xu, HW; Vogel, SC; Jin, CQ; Zhao, YS 收藏  |  浏览/下载：44/0  |  提交时间：2013/09/17 SUPERCONDUCTIVITY  DIFFRACTOMETER  CRYSTAL  LIFEAS  HIPPO   Growth of ZnO films under different oxygen partial pressures by metal organic chemical vapour deposition (EI CONFERENCE) 会议论文  OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者:  Gao X.;  Zhao J.;  Tang W.;  Wang C. 收藏  |  浏览/下载：27/0  |  提交时间：2013/03/25 ZnO films were grown under different oxygen partial pressures by metal organic chemical vapor deposition on the substrates of Corning glass. We investigated the quality of the films by SIEMENS D8 X-ray diffractometer. The surface morphology of the films were observed by Digital Nanoscope IIIa AFM with normal silicon nitride tip in the contact mode. The hall effect measurements were carried out with indium ohmic contact. The transmission spectrum of the films were measured. The transmission ratio is larger than 80% in the region above the wavelength of 385nm  and sharply decreased under 10% below the wavelength of 375 nm. (2010) Trans Tech Publications.   Microtwins and twin inclusions in the 3c-sic epilayers grown on si(001) by apcvd 期刊论文  iSwitch采集 Science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 6, 页码: 777-782 作者:  Zheng, XH;  Qu, B;  Wang, YT;  Dai, ZZ;  Yang, H 收藏  |  浏览/下载：28/0  |  提交时间：2019/05/12 3c-sic  Microtwins  X-ray four-circle diffractometer  Apcvd   Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD 期刊论文  OAI收割 science in china series a-mathematics physics astronomy, 2001, 卷号: 44, 期号: 6, 页码: 777-782 Zheng XH; Qu B; Wang YT; Dai ZZ; Yang H; Liang JW 收藏  |  浏览/下载：100/12  |  提交时间：2010/08/12 3C-SiC  microtwins  X-ray four-circle diffractometer  APCVD  CHEMICAL-VAPOR-DEPOSITION  SILICON-CARBIDE  PHASE EPITAXY  THIN-FILMS  GAN  SI  SUBSTRATE  DEFECTS  NITRIDE  MBE   Point defects in III-V compound semiconductors 期刊论文  OAI收割 defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93 Chen N 收藏  |  浏览/下载：55/0  |  提交时间：2010/08/12 compound semiconductors  point defects  deep level centres  stoichiometry  MOLECULAR-BEAM EPITAXY  GAAS SINGLE-CRYSTALS  SEMIINSULATING GALLIUM-ARSENIDE  SEMI-INSULATING GAAS  ELECTRICAL-PROPERTIES  LATTICE-PARAMETER  NATIVE DEFECTS  CARBON  DIFFRACTOMETER  STOICHIOMETRY   Effects of point defects on lattice parameters of semiconductors 期刊论文  OAI收割 physical review b, 1996, 卷号: 54, 期号: 12, 页码: 8516-8521 Chen NF; Wang YT; He HJ; Lin LY 收藏  |  浏览/下载：25/0  |  提交时间：2010/11/17 MOLECULAR-BEAM EPITAXY  GAAS SINGLE-CRYSTALS  LOW-TEMPERATURE GAAS  DOPED GAAS  LAYERS  CARBON  DIFFRACTOMETER  GROWTH  SI   ULTRAHIGH-VACUUM CHAMBER FOR SYNCHROTRON X-RAY-DIFFRACTION FROM FILMS ADSORBED ON SINGLE-CRYSTAL SURFACES 期刊论文  OAI收割 REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 卷号: 63, 期号: 8, 页码: 3835 DENNISON, JR; WANG, SK; DAI, P; ANGOT, T; TAUB, H; EHRLICH, SN 收藏  |  浏览/下载：23/0  |  提交时间：2014/02/20 ADSORPTION  MONOLAYER  AG(111)  DIFFRACTOMETER  XENON