机构

• 半导体研究所 [9]
• 长春光学精密机械与物... [2]

采集方式

• OAI收割 [7]
• iSwitch采集 [4]

内容类型

• 期刊论文 [9]
• 会议论文 [2]

发表日期

• 2018 [1]
• 2009 [6]
• 2005 [1]
• 2004 [3]

学科主题

• 光电子学 [4]
• 半导体器件 [1]

筛选

浏览/检索结果: 共11条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes 期刊论文  OAI收割 Micromachines, 2018, 卷号: 9, 期号: 12, 页码: 9 作者:  Zhou, S. J.;  Xu, H. H.;  Liu, M. L.;  Liu, X. T.;  Zhao, J.   |  收藏  |  浏览/下载：21/0  |  提交时间：2019/09/17 flip-chip light-emitting diodes  distributed Bragg reflector  light  output power  external quantum efficiency  quantum-well  p-type  leds  performance  wavelength  contacts  ito/dbr  laser  power  fabrication  Science & Technology - Other Topics  Instruments & Instrumentation   Narrow-linewidth microwave generation using a self-injected dbr laser diode 期刊论文  iSwitch采集 Ieee photonics technology letters, 2009, 卷号: 21, 期号: 15, 页码: 1045-1047 作者:  Zhang, Hong Guang;  Zhu, Ning Hua;  Man, Jiang Wei;  Ke, Jian Hong;  Zhang, Bang Hong 收藏  |  浏览/下载：24/0  |  提交时间：2019/05/12 Distributed bragg reflector (dbr) laser diode  Microwave generation  Narrow linewidth  Self-injection   Design and fabrication of algan-based resonant-cavity-enhanced p-i-n uv pds 期刊论文  iSwitch采集 Ieee journal of quantum electronics, 2009, 卷号: 45, 期号: 5-6, 页码: 575-578 作者:  Nie, Chao;  Jiang, Ruo Lian;  Ji, Xiao Li;  Xie, Zi Li;  Liu, Bin 收藏  |  浏览/下载：27/0  |  提交时间：2019/05/12 Algan  Distributed bragg reflector (dbr)  Resonant-cavity-enhanced (rce)  Transfer-matrix-approach (tma)  Ultraviolet (uv) photodetector (pd)   Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs 期刊论文  OAI收割 ieee journal of quantum electronics, 2009, 卷号: 45, 期号: 5-6, 页码: 575-578 作者:  Ji XL 收藏  |  浏览/下载：52/0  |  提交时间：2010/03/08 AlGaN  distributed Bragg reflector (DBR)  resonant-cavity-enhanced (RCE)  transfer-matrix-approach (TMA)  ultraviolet (UV) photodetector (PD)   Narrow-Linewidth Microwave Generation Using a Self-Injected DBR Laser Diode 期刊论文  OAI收割 ieee photonics technology letters, 2009, 卷号: 21, 期号: 15, 页码: 1045-1047 作者:  Man JW;  Ke JH 收藏  |  浏览/下载：120/4  |  提交时间：2010/03/08 Distributed Bragg reflector (DBR) laser diode  microwave generation  narrow linewidth  self-injection   Blue-violet lasing of optically pumped gan-based vertical cavity surface-emitting laser with dielectric distributed bragg reflectors 期刊论文  iSwitch采集 Journal of lightwave technology, 2009, 卷号: 27, 期号: 1-4, 页码: 55-59 作者:  Zhang, Jiang-Yong;  Cai, Li-E;  Zhang, Bao-Ping;  Li, Shui-Qing;  Lin, Feng 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Dielectric distributed bragg reflector (dbr)  Gan  Laser lift-off  Vertical cavity surface-emitting laser (vcsel)   Blue-violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors 期刊论文  OAI收割 journal of lightwave technology, 2009, 卷号: 27, 期号: 1-4, 页码: 55-59 Zhang JY; Cai LE; Zhang BP; Li SQ; Lin F; Shang JZ; Wang DX; Lin KC; Yu JZ; Wang QM 收藏  |  浏览/下载：175/53  |  提交时间：2010/03/08 Dielectric distributed Bragg reflector (DBR)  GaN  laser lift-off  vertical cavity surface-emitting laser (VCSEL)   Numerical simulation and experiment of novel semiconductor/superlattice distributed Bragg reflectors (EI CONFERENCE) 会议论文  OAI收割 Optical Transmission, Switching, and Subsystems III, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Zhao Y.;  Zhao Y.;  Zhao Y.;  Wang X.;  Wang X. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 We introduced a novel semiconductor/superlattice AlAs/(GaAs/AlAs) distributed Bragg reflector (DBR)  and the reflection spectrum of the DBR at 980nm wavelength is simulated by employing transfer matrix method. By adjusting the thickness of AlAs layer and the period of superlattice GaAs/AlAs  the DBR with center wavelength at 1500nm is also investigated theoretically. In experiment  this kind of DBR is grown on GaAs (100) substrate. From the measured reflection spectrum  the central wavelength is about 980 nm with high reflectivity.   Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD) 期刊论文  OAI收割 gettering and defect engineering in semiconductor technology, 2004, 卷号: 95-96, 期号: 0, 页码: 255-260 Yu JZ; Li C; Cheng BW; Wang QM 收藏  |  浏览/下载：59/16  |  提交时间：2010/03/09 DBR (distributed bragg reflector)   Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD) 会议论文  OAI收割 10th international autumn meeting on gettering and defect engineering in semiconductor technology (gadest 2003), berlin, germany, sep 21-26, 2003 Yu JZ; Li C; Cheng BW; Wang QM 收藏  |  浏览/下载：33/0  |  提交时间：2010/11/15 DBR (distributed bragg reflector)  MQW (multiple quantum wells)  optical fiber communication  photodiode  RCE-PD (resonant-cavity-enhanced photodiode)  responsivity  SiGe/Si  SOI