机构

• 半导体研究所 [6]
• 物理研究所 [4]
• 力学研究所 [3]
• 金属研究所 [2]
• 理论物理研究所 [2]
• 宁波材料技术与工程研... [2]
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采集方式

• OAI收割 [20]

内容类型

• 期刊论文 [20]

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• 2020 [2]
• 2013 [1]
• 2011 [3]
• 2010 [2]
• 2009 [3]
• 2008 [1]
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学科主题

• 半导体物理 [5]
• Physics [2]
• Materials ... [1]
• Optics [1]
• Physics, M... [1]
• 半导体材料 [1]
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筛选

浏览/检索结果: 共20条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Controlling Light, Heat, and Vibrations in Plasmonics and Phononics 期刊论文  OAI收割 ADVANCED OPTICAL MATERIALS, 2020 作者:  Cunha, Joao;  Guo, Tian-Long   |  收藏  |  浏览/下载：62/0  |  提交时间：2020/12/16 INTRABAND OPTICAL CONDUCTIVITY  ELECTRON-ELECTRON SCATTERING  THERMAL-CONDUCTIVITY  ACOUSTIC VIBRATIONS  DEFORMATION POTENTIALS  GOLD NANOPARTICLES  ENERGY-DISSIPATION  LATTICE-DYNAMICS  TRANSPORT  SILICON   Controlling Light, Heat, and Vibrations in Plasmonics and Phononics 期刊论文  OAI收割 ADVANCED OPTICAL MATERIALS, 2020, 卷号: 8, 期号: 24 作者:  Cunha, Joao;  Guo, Tian-Long;  Della Valle, Giuseppe;  Koya, Alemayehu Nana;  Proietti Zaccaria, Remo   |  收藏  |  浏览/下载：31/0  |  提交时间：2021/12/01 INTRABAND OPTICAL CONDUCTIVITY  ELECTRON-ELECTRON SCATTERING  THERMAL-CONDUCTIVITY  ACOUSTIC VIBRATIONS  DEFORMATION POTENTIALS  GOLD NANOPARTICLES  ENERGY-DISSIPATION  LATTICE-DYNAMICS  TRANSPORT  SILICON   Atomistic investigation of the annihilation of non-screw dislocation dipoles in Al, Cu, Ni and gamma-TiAl 期刊论文  OAI收割 Modelling and Simulation in Materials Science and Engineering, 2013, 卷号: 21, 期号: 2 H. Wang; D. S. Xu; D. Rodney; P. Veyssiere; R. Yang 收藏  |  浏览/下载：15/0  |  提交时间：2013/12/24 copper single-crystals  activation-relaxation technique  interatomic  potentials  faulted dipoles  fcc metals  deformation  equilibrium  dynamics  clusters  heights   Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4 Chen, Y; Jiang, Y; Xu, PQ; Ma, ZG; Wang, XL; Wang, L; Jia, HQ; Chen, H 收藏  |  浏览/下载：35/0  |  提交时间：2013/09/24 PHONON DEFORMATION POTENTIALS  OPTICAL-PROPERTIES  RAMAN-SCATTERING  GALLIUM NITRIDE  BUFFER LAYERS  STRAIN  ALN  FILMS  HETEROSTRUCTURES  PHOTOLUMINESCENCE   Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467 作者:  Pan X 收藏  |  浏览/下载：94/5  |  提交时间：2011/07/05 Sandwich structure  Stress  Aluminum nitride  Gallium nitride  Silicon  PHONON DEFORMATION POTENTIALS  WURTZITE ALN  SILICON  STRESS  TRANSISTORS  EPITAXY  LAYERS   Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices 期刊论文  OAI收割 journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 2011, 卷号: 44, 44, 期号: 42, 页码: 425103, 425103 作者:  Lang, XL;  Xia, JB;  Lang, XL (reprint author), CAS, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China,langxiaoli@semi.ac.cn;  xiajb@semi.ac.cn   |  收藏  |  浏览/下载：190/0  |  提交时间：2012/01/06 GASB SUPER-LATTICE  SEMICONDUCTOR HETEROSTRUCTURES  DEFORMATION POTENTIALS  II SUPERLATTICES  BAND PARAMETERS  DETECTORS  APPROXIMATION  TRANSITIONS  Gasb Super-lattice  Semiconductor Heterostructures  Deformation Potentials  Ii Superlattices  Band Parameters  Detectors  Approximation  Transitions   Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction 期刊论文  OAI收割 SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 卷号: 53, 期号: 3, 页码: 465 Zhang, YC; Xing, ZG; Ma, ZG; Chen, Y; Ding, GJ; Xu, PQ; Dong, CM; Chen, H; Le, XY 收藏  |  浏览/下载：35/0  |  提交时间：2013/09/23 LIGHT-EMITTING-DIODES  PHONON DEFORMATION POTENTIALS  FILMS  EPITAXY  ALN   An Elasto-Plastic Damage Constitutive Theory Based on Pair Functional Potentials and Slip Mechanism 期刊论文  OAI收割 CHINESE JOURNAL OF AERONAUTICS, 2010, 卷号: 23, 期号: 6, 页码: 686-697 作者:  Liu F(刘芳);  Fu Q(付强);  Chen C(陈岑);  Liang NG(梁乃刚) 收藏  |  浏览/下载：28/0  |  提交时间：2016/02/01 elasto-plastic damage constitutive relation  finite deformation  pair functional potentials  Cauchy-Born rule  slip mechanism  component assembling model   Relationships between strain and band structure in Si(001) and Si(110) nanomembranes 期刊论文  OAI收割 PHYSICAL REVIEW B, 2009, 卷号: 80, 期号: 11 Euaruksakul, C; Chen, F; Tanto, B; Ritz, CS; Paskiewicz, DM; Himpsel, FJ; Savage, DE; Liu, Z; Yao, YG; Liu, F; Lagally, MG 收藏  |  浏览/下载：29/0  |  提交时间：2013/09/24 DEFORMATION POTENTIALS  SILICON NANOMEMBRANES  SI  GE  SURFACE  ALLOYS  MOBILITY  SEMICONDUCTORS  SPECTROSCOPY  RELAXATION   The transformation of narrow dislocation dipoles in selected fcc metals and in gamma-TiAl 期刊论文  OAI收割 Acta Materialia, 2009, 卷号: 57, 期号: 13, 页码: 3725-3737 H. Wang; D. S. Xu; R. Yang; P. Veyssiere 收藏  |  浏览/下载：45/0  |  提交时间：2012/04/13 Dislocation dipole  Pipe diffusion  Stacking fault tetrahedron  Molecular dynamics simulations  Faulted dipole  copper single-crystals  stacking-fault energy  transmission  electron-microscopy  weak-beam  interatomic potentials  fatigued copper  core structures  slip  deformation  dynamics