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期刊论文 [15]
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Resistive Switching Behavior in Ferroelectric Heterostructures
期刊论文
OAI收割
SMALL, 2019, 卷号: 15, 期号: 32, 页码: 13
作者:
Wang, Zhan Jie
;
Bai, Yu
  |  
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2021/02/02
conductivity
ferroelectric heterostructures
ferroelectricity
resistive switching
Resistive Switching Behavior in Ferroelectric Heterostructures
期刊论文
OAI收割
SMALL, 2019, 卷号: 15, 期号: 32, 页码: 13
作者:
Wang, Zhan Jie
;
Bai, Yu
  |  
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2021/02/02
conductivity
ferroelectric heterostructures
ferroelectricity
resistive switching
Resistive Switching and Modulation of Pb(Zr0.4Ti0.6)O-3/Nb:SrTiO3 Heterostructures
期刊论文
OAI收割
ACS APPLIED MATERIALS & INTERFACES, 2016, 卷号: 8, 期号: 48, 页码: 32948-32955
作者:
Bai, Yu
;
Wang, Zhan Jie
;
Chen, Yan Na
;
Cui, Jian Zhong
  |  
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2021/02/02
ferroelectric heterostructures
resistive switching behaviors
ON/OFF ratio
ferroelectric polarization
interfacial built-in field
Multiferroic tunnel junctions
期刊论文
OAI收割
Frontiers of Physics, 2012, 卷号: 7, 期号: 4, 页码: 380-385
Y. W. Yin
;
M. Raju
;
W. J. Hu
;
X. J. Weng
;
K. Zou
;
J. Zhu
;
X. G. Li
;
Z. D. Zhang
;
Q. Li
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2013/02/05
multiferroic tunnel junction
ferroelectric film
tunneling
magnetoresistance effect
tunneling electroresisitance effect
magnetoelectric coupling
complex oxide heterostructures
ferroelectric control
spin
polarization
room-temperature
barriers
films
interfaces
states
Microstructural evolution of PbZr(x)Ti(1-x)O(3)/PbZr(y)Ti(1-y)O(3) (n) epitaxial multilayers (x/y=0.2/0.4, 0.4/0.6) - dependence on layer thickness
期刊论文
OAI收割
Philosophical Magazine, 2010, 卷号: 90, 期号: 10, 页码: 1359-1372
Y. L. Zhu
;
S. J. Zheng
;
X. L. Ma
;
L. Feigl
;
M. Alexe
;
D. Hesse
;
I. Vrejoiu
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2012/04/13
ferroelectrics
transmission electron microscopy
microstructure
ferroelectric thin-films
misfit relaxation mechanisms
domain
configurations
heterostructures
polarization
Polarization fatigue resistance of Ca-doped Pb(Zr0.52Ti0.48)O-3 thin films prepared by the sol-gel method
期刊论文
OAI收割
Applied Physics a-Materials Science & Processing, 2008, 卷号: 90, 期号: 1, 页码: 185-189
T. Wei
;
Y. Wang
;
C. Zhu
;
X. W. Dong
;
Y. D. Xia
;
J. S. Zhu
;
J. M. Liu
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/04/13
ferroelectric fatigue
electrical-properties
o heterostructures
capacitors
electrodes
catio3
Investigation of YBa(2)Cu3O(7-delta) growth mode effect on the dielectric properties of BaxSr1-xTiO3 for BaxSr1-xTiO3/YBa2Cu3O7-delta bilayered thin films epitaxially grown on vicinal LaAlO3 substrates
期刊论文
OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 卷号: 39, 期号: 19, 页码: 4222
Zhu, XH
;
Peng, W
;
Tian, HF
;
Yong, LP
;
Li, J
;
Li, JQ
;
Zheng, DN
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2013/09/18
MICROWAVE PHASE SHIFTERS
FERROELECTRIC HETEROSTRUCTURES
YBA2CU3O7-DELTA
SRRUO3
LAYER
MGO
Ce-doping eiiects on electronic structures of Ba0.5Sr0.5TiO3 thin film
期刊论文
OAI收割
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 卷号: 39, 期号: 5, 页码: 979
Wang, SY
;
Cheng, BL
;
Wang, C
;
Button, TW
;
Dai, SY
;
Jin, KJ
;
Lu, HB
;
Zhou, YL
;
Chen, ZH
;
Yang, GZ
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2013/09/17
FERROELECTRIC HETEROSTRUCTURES
SRTIO3/SI(001) HETEROJUNCTIONS
STRONTIUM-TITANATE
LEAKAGE CURRENT
SRTIO3
BATIO3
SURFACE
Structural and electrical properties of epitaxial Ba0.5Sr0.5TiO3/ SrRuO3 heterostructures grown by pulsed laser deposition
期刊论文
OAI收割
JOURNAL OF CRYSTAL GROWTH, 2004, 卷号: 268, 期号: 1-2, 页码: 192
Zhu, XH
;
Zheng, DN
;
Peng, W
;
Miao, J
;
Li, J
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2013/09/24
(BA0.5SR0.5)TIO3 THIN-FILMS
FERROELECTRIC HETEROSTRUCTURES
ELECTRODES
FABRICATION
DEPENDENCE
LAALO3
Enhanced dielectric properties of Ba1-xSrxTiO3 thin film grown on La1-xSrxMnO3 bottom layer
期刊论文
OAI收割
JOURNAL OF APPLIED PHYSICS, 2004, 卷号: 96, 期号: 11, 页码: 6578
Miao, J
;
Chen, WR
;
Zhao, L
;
Chen, B
;
Yang, H
;
Peng, W
;
Zhu, XH
;
Xu, B
;
Cao, LX
;
Qiu, XG
;
Zhao, BR
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2013/09/17
ELECTRICAL-PROPERTIES
FERROELECTRIC PROPERTIES
LANIO3 ELECTRODE
LEAKAGE CURRENT
HETEROSTRUCTURES
OXYGEN
LA0.5SR0.5COO3
TUNABILITY
CAPACITORS
DEPOSITION