中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共12条，第1-10条 帮助

条数/页： 排序方式：
Raman spectroscopy-based screening of zircon for reliable water content and oxygen isotope measurements 期刊论文  OAI收割
AMERICAN MINERALOGIST, 2022, 卷号: 107, 期号: 5, 页码: 936-945
作者:  Yang, Chuan-Mao;  Xu, Yi-Gang;  Xia, Xiao-Ping;  Gao, Yu-Ya;  Zhang, Wan-Feng
  |  收藏  |  浏览/下载：36/0  |  提交时间：2022/07/07
Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells 期刊论文  OAI收割
Materials Research Bulletin, 2019, 卷号: 115, 页码: 196-200
作者:  Y.Song;  L.G.Zhang;  Y.G.Zeng;  Y.Y.Chen;  L.Qin
  |  收藏  |  浏览/下载：33/0  |  提交时间：2020/08/24
Finite element analysis of infrared thermal imaging for four-layers structure of human thigh 期刊论文  OAI收割
Chinese Optics, 2018, 卷号: 11, 期号: 2, 页码: 237-247
作者:  Liu, Hong-Yan;  Sun, Qiang
  |  收藏  |  浏览/下载：17/0  |  提交时间：2019/09/17
Chromatic analysis of harmonic Fresnel lenses by FDTD and angular spectrum methods 期刊论文  OAI收割
Applied Optics, 2018, 卷号: 57, 期号: 19, 页码: 5281-5287
作者:  Yang, Jianming;  Twardowski, Patrice;  Gerard, Philippe;  Yu, Wenhui;  Fontaine, Joel
  |  收藏  |  浏览/下载：25/0  |  提交时间：2019/09/17
Observation of critical behavior of ultra-cold Bose gas in a magnetic trap 期刊论文  OAI收割
ACTA PHYSICA SINICA, 2016, 卷号: 65, 期号: 11
作者:  Wang Bing;  Zhu Qiang;  Xiong De-Zhi;  Lu Bao-Long
收藏  |  浏览/下载：29/0  |  提交时间：2016/10/08
Effect of thickness on the structural, electrical and optical properties of ZnO films deposited by MBE (EI CONFERENCE) 会议论文  OAI收割
2011 International Conference on Advanced Design and Manufacturing Engineering, ADME 2011, September 16, 2011 - September 18, 2011, Guangzhou, China
Yang X.; Su S.; Yi X.; Mei T.
收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25
A set of ZnO films of different thickness have been deposited on sapphire substrates using molecular beam epitaxy (MBE) by varying the growth time and the effect of film thickness on the structural  electrical and optical properties have been investigated. The X-ray diffraction (XRD) results indicate that the full width at half maximum (FWHM) of the (002) diffraction peak is decreased as the film thickness increasing  and the stress along c-axis is stable. Scanning electron microscope (SEM) measurement shows that the grains become more uniform as the film grows thicker and the film surface present distinct hexagon shape as the film is grown up to a thickness of 500nm. The optical absorbance  Hall mobility and photoluminescence (PL) intensity are increased in accordance with the thickness of the film. (2011) Trans Tech Publications  Switzerland.  
ZnO thin film grown on glass by metal-organic chemical vapor deposition (EI CONFERENCE) 会议论文  OAI收割
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, March 24, 2008 - March 27, 2008, Shanghai, China
作者:  Wang C.
收藏  |  浏览/下载：163/0  |  提交时间：2013/03/25
Theoretical study of the light scattering from gold nanotubes: Effects of wall thickness 期刊论文  OAI收割
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2007, 卷号: 454, 页码: 685-689
作者:  Zhu, Jian
  |  收藏  |  浏览/下载：14/0  |  提交时间：2018/05/31
Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W.
收藏  |  浏览/下载：37/0  |  提交时间：2013/03/25
High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that  below 500 C  ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra  ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature  which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown  which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.  
High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  Liu Y.;  Wang L.-J.;  Wang L.-J.;  Liu Y.;  Liu Y.
收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25
Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature  resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm  the full width at half-maximum is 0.7 nm  and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection  the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.