机构

• 半导体研究所 [9]
• 物理研究所 [1]
• 金属研究所 [1]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [12]

内容类型

• 期刊论文 [11]
• 会议论文 [1]

发表日期

• 2006 [1]
• 2005 [1]
• 2001 [1]
• 2000 [2]
• 1999 [2]
• 1996 [1]
• 更多

学科主题

• 半导体材料 [5]
• 半导体物理 [3]
• 半导体化学 [1]

筛选

浏览/检索结果: 共12条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The local structure distortion of chromium-phosphorus clusters as Cr2+ impurity in InP semiconductors 期刊论文  OAI收割 Zeitschrift Fur Naturforschung Section a-a Journal of Physical Sciences, 2006, 卷号: 61, 期号: 7-8, 页码: 371-374 X. M. Tan; X. Y. Kuang; K. W. Zhou; C. Lu; Q. S. Zhu 收藏  |  浏览/下载：26/0  |  提交时间：2012/04/14 zero-field-splitting parameters  local structure  complete energy matrix  iii-v semiconductors  jahn-teller system  epr parameters  gaas  gap  spectra  defect  ions   Numerical simulation and experiment of novel semiconductor/superlattice distributed Bragg reflectors (EI CONFERENCE) 会议论文  OAI收割 Optical Transmission, Switching, and Subsystems III, November 7, 2005 - November 10, 2005, Shanghai, China 作者:  Zhao Y.;  Zhao Y.;  Zhao Y.;  Wang X.;  Wang X. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 We introduced a novel semiconductor/superlattice AlAs/(GaAs/AlAs) distributed Bragg reflector (DBR)  and the reflection spectrum of the DBR at 980nm wavelength is simulated by employing transfer matrix method. By adjusting the thickness of AlAs layer and the period of superlattice GaAs/AlAs  the DBR with center wavelength at 1500nm is also investigated theoretically. In experiment  this kind of DBR is grown on GaAs (100) substrate. From the measured reflection spectrum  the central wavelength is about 980 nm with high reflectivity.   Detection of efficient carrier capture in ultrathin InAs/GaAs layers using a degenerate pump-probe technique 期刊论文  OAI收割 journal of physics-condensed matter, 2001, 卷号: 13, 期号: 18, 页码: 3923-3930 Liu B; Li Q; Xu ZY; Ge WK 收藏  |  浏览/下载：119/10  |  提交时间：2010/08/12 QUANTUM DOTS  ZNSE MATRIX  GAAS  SPECTROSCOPY  RELAXATION   The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 212, 期号: 1-2, 页码: 360-363 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12 self-organized quantum dots  InAs/In0.53Ga0.47As multilayer  InP substrate  MBE  MOLECULAR-BEAM-EPITAXY  INAS ISLANDS  GROWTH  MATRIX  GAAS   Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of crystal growth, 2000, 卷号: 218, 期号: 2-4, 页码: 451-454 作者:  Xu B;  Ye XL 收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12 quantum dots  molecular beam epitaxy  InAs/InP  INP  ISLANDS  GAAS  MATRIX   Two-dimensional ordering of self-assembled InxGa1-xAs quantum dots grown on GaAs(311)B surfaces 期刊论文  OAI收割 journal of crystal growth, 1999, 卷号: 205, 期号: 4, 页码: 481-488 作者:  Xu B 收藏  |  浏览/下载：70/0  |  提交时间：2010/08/12 two-dimensional (2D) ordering  quantum dot array  InxGa1-xAs  self-assembly  molecular beam epitaxy  GaAs(311)B  high-index  CHEMICAL-VAPOR-DEPOSITION  ORGANIZED GROWTH  INAS ISLANDS  GAAS  GAAS(100)  ALIGNMENT  MATRIX  ARRAYS  DISKS  MOLECULAR-BEAM-EPITAXY   Two-dimensional ordering of self-assembled InxGal-xAs quantum dots grown on GaAs(311)B surfaces 期刊论文  OAI收割 journal of crystal growth, 1999, 卷号: 206, 期号: 4, 页码: 279-286 作者:  Xu B 收藏  |  浏览/下载：51/0  |  提交时间：2010/08/12 two-dimensional (2D) ordering  quantum dot array  InxGa1-xAs  self-assembly  molecular beam epitaxy  GaAs(311)B  high index  CHEMICAL-VAPOR-DEPOSITION  ORGANIZED GROWTH  INAS ISLANDS  GAAS  GAAS(100)  ALIGNMENT  MATRIX  DISKS  MOLECULAR-BEAM-EPITAXY   Effective-mass theory for InAs/GaAs strained coupled quantum dots 期刊论文  OAI收割 physical review b, 1996, 卷号: 54, 期号: 16, 页码: 11575-11581 Li SS; Xia JB; Yuan ZL; Xu ZY; Ge WK; Wang XR; Wang Y; Wang J; Chang LL 收藏  |  浏览/下载：41/0  |  提交时间：2010/11/17 SELF-ORGANIZED GROWTH  ISLAND FORMATION  VALENCE BANDS  BEAM EPITAXY  GAAS MATRIX  INAS  PHOTOLUMINESCENCE  HETEROSTRUCTURES  MICROSTRUCTURES  SUPERLATTICES   ON THE DOYLE-TURNER REPRESENTATION OF THE OPTICAL-POTENTIAL FOR RHEED CALCULATIONS 期刊论文  OAI收割 SURFACE SCIENCE, 1995, 卷号: 330, 期号: 1, 页码: 86 DUDAREV, SL; PENG, LM; WHELAN, MJ 收藏  |  浏览/下载：23/0  |  提交时间：2013/09/24 ENERGY ELECTRON-DIFFRACTION  ABSORPTIVE FORM-FACTORS  GAAS(001)-2X4 SURFACES  DYNAMICAL DIFFRACTION  CRYSTALS  INTENSITIES  SCATTERING  PATTERNS  MATRIX   HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS 期刊论文  OAI收割 journal of physics and chemistry of solids, 1995, 卷号: 56, 期号: 0, 页码: 385-388 LI GH; GONI AR; SYASSEN K; BRANDT O; PLOOG K 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/17 NANOSTRUCTURES  SEMICONDUCTORS  HIGH PRESSURE  LUMINESCENCE  HYDROSTATIC-PRESSURE  ELECTRONIC-STRUCTURE  GAAS MATRIX  SUPERLATTICES  TRANSITION  EXCITONS