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浏览/检索结果: 共50条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer 期刊论文  OAI收割 SMALL, 2022, 页码: 7 作者:  Wei, Yu-Ning;  Hu, Xian-Gang;  Zhang, Jian-Wei;  Tong, Bo;  Du, Jin-Hong   |  收藏  |  浏览/下载：53/0  |  提交时间：2022/07/14 carbon nanotube films  Fermi-level pinning  germanium  metal-induced gap states  ohmic contacts   Investigating the Trade-Off between Device Performance and Energy Loss in Nonfullerene Organic Solar Cells 期刊论文  OAI收割 ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 32, 页码: 29124-29131 作者:  Hong, Ling;  Yao, Huifeng;  Yu, Runnan;  Xu, Ye;  Gao, Bowei   |  收藏  |  浏览/下载：38/0  |  提交时间：2019/12/18 SMALL-MOLECULE ACCEPTOR  QUANTUM EFFICIENCY  POLYMER  DESIGN  DONOR  VOLTAGE  STATES  GAP   Quantum phase transition and destruction of Kondo effect in pressurized SmB6 期刊论文  OAI收割 SCIENCE BULLETIN, 2017, 卷号: 62, 期号: 21, 页码: 1439-1444 作者:  Zhou, YZ;  Wu, Q;  Rosa, PFS;  Yu, R;  Guo, J   |  收藏  |  浏览/下载：35/0  |  提交时间：2018/08/30 Heavy-fermion Metals  Insulator Smb6  Surface-states  Resistivity  Gap   Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials 期刊论文  OAI收割 ACTA MATERIALIA, 2012, 卷号: 60, 期号: 1, 页码: 323-328 Rao, F; Song, ZT; Cheng, Y; Xia, MJ; Ren, K; Wu, LC; Liu, B; Feng, SL 收藏  |  浏览/下载：18/0  |  提交时间：2013/04/17 Phase change  Band gap  Density of localized states   Theoretical study on photophysical properties of cyclometalated cationic iridium(III) complexes containing dipyrido[3,2-f:2 ',3 '-h]quinoxaline ligand 期刊论文  OAI收割 synthetic metals, 2012, 卷号: 162, 期号: 15-16, 页码: 1392-1399 Su JJ; Sun XB; Gahungu G; Qu XC; Liu YQ; Wu ZJ 收藏  |  浏览/下载：26/0  |  提交时间：2013/04/23 DENSITY-FUNCTIONAL THEORY  POLARIZABLE CONTINUUM MODEL  ENERGY-GAP LAW  EXCITED-STATES  ELECTROLUMINESCENT DEVICES  IR(III) COMPLEXES  ELECTROCHEMICAL PROPERTIES  BLUE PHOSPHORESCENCE  EXCITATION-ENERGIES  ANCILLARY LIGAND   Continuous quantum phase transition between two topologically distinct valence bond solid states associated with the same spin value 期刊论文  OAI收割 PHYSICAL REVIEW B, 2011, 卷号: 83, 期号: 1, 页码: 14409 作者:  Xiang, T 收藏  |  浏览/下载：16/0  |  提交时间：2013/05/17 GROUND-STATES  ANTIFERROMAGNETS  BREAKING  MODELS  GAP   First-principles study on the electronic structure of dilute magnetic semiconductor Ga(1-x)Cr(x)P in zinc-blende phase 期刊论文  OAI收割 Physica Status Solidi B-Basic Solid State Physics, 2011, 卷号: 248, 期号: 5, 页码: 1258-1263 H. M. Huang; S. J. Luo; K. L. Yao 收藏  |  浏览/下载：20/0  |  提交时间：2012/04/13 dilute magnetic semiconductors  density functional theory  electron  density of states  GaCrP  half-metallic ferromagnets  heusler alloys  doped gap  spin  gaas  ge  al  si   Continuous quantum phase transition between two topologically distinct valence bond solid states associated with the same spin value 期刊论文  OAI收割 PHYSICAL REVIEW B, 2011, 卷号: 83, 期号: 1 Zheng, D; Zhang, GM; Xiang, T; Lee, DH 收藏  |  浏览/下载：21/0  |  提交时间：2013/09/17 GROUND-STATES  ANTIFERROMAGNETS  BREAKING  MODELS  GAP   Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文  OAI收割 journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801 Liu GH (Liu Genhua); Chen YH (Chen Yonghai); Jia CH (Jia Caihong); Hao GD (Hao Guo-Dong); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：27/0  |  提交时间：2010/12/28 NARROW-GAP SEMICONDUCTOR  INVERSION-ASYMMETRY  QUANTUM DOTS  BAND  STATES   Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: 3,152907-1-052907-3 作者:  Chen, SJ;  Zhang, J;  Wang, XL;  Han, K;  Wang, WW   |  收藏  |  浏览/下载：12/0  |  提交时间：2010/11/26 Schottky Barriers  Surface States  Gap States