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Chinese Academy of Sciences Institutional Repositories Grid
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Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer
期刊论文
OAI收割
SMALL, 2022, 页码: 7
作者:
Wei, Yu-Ning
;
Hu, Xian-Gang
;
Zhang, Jian-Wei
;
Tong, Bo
;
Du, Jin-Hong
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Investigating the Trade-Off between Device Performance and Energy Loss in Nonfullerene Organic Solar Cells
期刊论文
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ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 32, 页码: 29124-29131
作者:
Hong, Ling
;
Yao, Huifeng
;
Yu, Runnan
;
Xu, Ye
;
Gao, Bowei
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Quantum phase transition and destruction of Kondo effect in pressurized SmB6
期刊论文
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SCIENCE BULLETIN, 2017, 卷号: 62, 期号: 21, 页码: 1439-1444
作者:
Zhou, YZ
;
Wu, Q
;
Rosa, PFS
;
Yu, R
;
Guo, J
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Investigation of changes in band gap and density of localized states on phase transition for Ge2Sb2Te5 and Si3.5Sb2Te3 materials
期刊论文
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ACTA MATERIALIA, 2012, 卷号: 60, 期号: 1, 页码: 323-328
Rao, F
;
Song, ZT
;
Cheng, Y
;
Xia, MJ
;
Ren, K
;
Wu, LC
;
Liu, B
;
Feng, SL
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Theoretical study on photophysical properties of cyclometalated cationic iridium(III) complexes containing dipyrido[3,2-f:2 ',3 '-h]quinoxaline ligand
期刊论文
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synthetic metals, 2012, 卷号: 162, 期号: 15-16, 页码: 1392-1399
Su JJ
;
Sun XB
;
Gahungu G
;
Qu XC
;
Liu YQ
;
Wu ZJ
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Continuous quantum phase transition between two topologically distinct valence bond solid states associated with the same spin value
期刊论文
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PHYSICAL REVIEW B, 2011, 卷号: 83, 期号: 1, 页码: 14409
作者:
Xiang, T
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First-principles study on the electronic structure of dilute magnetic semiconductor Ga(1-x)Cr(x)P in zinc-blende phase
期刊论文
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Physica Status Solidi B-Basic Solid State Physics, 2011, 卷号: 248, 期号: 5, 页码: 1258-1263
H. M. Huang
;
S. J. Luo
;
K. L. Yao
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Continuous quantum phase transition between two topologically distinct valence bond solid states associated with the same spin value
期刊论文
OAI收割
PHYSICAL REVIEW B, 2011, 卷号: 83, 期号: 1
Zheng, D
;
Zhang, GM
;
Xiang, T
;
Lee, DH
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Spin splitting modulated by uniaxial stress in InAs nanowires
期刊论文
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journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801
Liu GH (Liu Genhua)
;
Chen YH (Chen Yonghai)
;
Jia CH (Jia Caihong)
;
Hao GD (Hao Guo-Dong)
;
Wang ZG (Wang Zhanguo)
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Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure
期刊论文
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APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: 3,152907-1-052907-3
作者:
Chen, SJ
;
Zhang, J
;
Wang, XL
;
Han, K
;
Wang, WW
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