机构

• 半导体研究所 [5]
• 上海微系统与信息技术... [3]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [7]
• iSwitch采集 [2]

内容类型

• 期刊论文 [7]
• 会议论文 [2]

发表日期

• 2012 [1]
• 2010 [1]
• 2005 [1]
• 2001 [1]
• 1998 [5]

学科主题

• 半导体材料 [2]
• Crystallog... [1]
• Engineerin... [1]
• Engineerin... [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共9条，第1-9条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Temperature dependent lasing characteristics of InAs/InP(100) quantum dot laser 期刊论文  OAI收割 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2012, 卷号: 15, 期号: 1, 页码: 86-90 Li, SG; Gong, Q; Cao, CF; Wang, XZ; Chen, P; Yue, L; Liu, QB; Wang, HL; Ma, CH 收藏  |  浏览/下载：23/0  |  提交时间：2013/04/17 Semiconductor laser  Quantum dot laser  Indium phosphide  Gas source molecular beam epitaxy   GaInP-AlInP-GaAs Blue Photovoltaic Detectors With Narrow Response Wavelength Width 期刊论文  OAI收割 IEEE PHOTONICS TECHNOLOGY LETTERS, 2010, 卷号: 22, 期号: 12, 页码: 944-946 Zhang, YG(张永刚）; Li, C; Gu, Y; Wang, K; Li, HSBY; Shao, XM; Fang, JX 收藏  |  浏览/下载：19/0  |  提交时间：2012/03/24 GAS-SOURCE MBE  MOLECULAR-BEAM EPITAXY   GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 281, 期号: 2-4, 页码: 255-262 Huang, ZC; Wu, HZ; Lao, YF; Cao, M; Liu, C 收藏  |  浏览/下载：20/0  |  提交时间：2012/03/24 MOLECULAR-BEAM EPITAXY  X-RAY-DIFFRACTION  GAS-SOURCE MBE  MISFIT DISLOCATIONS  LASERS  INP  DEFECTS   InGaAs/InGaAsP microdisk lasers grown by GSMBE (EI CONFERENCE) 会议论文  OAI收割 11th International Conference on Molecular Beam Epitaxy, September 11, 2000 - September 15, 2000, Bijing, China Wu G.; Wang X. H.; Zheng Q.; Ren D. C.; Zhang X. D. 收藏  |  浏览/下载：16/0  |  提交时间：2013/03/25 Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 80 A/50 A InGaAs/InGaAsP multiple quantum wells structures grown by gas-source molecular beam epitaxy. We have achieved optically pumped InGaAs/InGaAsP multiquantum wells microdisk lasers at a pump power threshold of Pth = 150 W at pump wavelength = 514.5 nm  which was measured for a 10 m-diameter disk with lasing emission wavelength near = 1.6 m. 2001 Elsevier Science B.V.   Gas source molecular beam epitaxy and thermal stability of si1-xgex/si superlattice materials 期刊论文  iSwitch采集 Revista mexicana de fisica, 1998, 卷号: 44, 页码: 93-96 作者:  Zou, LF;  Acosta-Ortiz, SE;  Zou, LX;  Regalado, LE;  Sun, DZ 收藏  |  浏览/下载：25/0  |  提交时间：2019/05/12 Gas source molecular beam epitaxy  Thermal stability  Si1-xgex   High-concentration hydrogen in unintentionally doped gan 期刊论文  iSwitch采集 Journal of crystal growth, 1998, 卷号: 189, 页码: 566-569 作者:  Zhang, JP;  Wang, XL;  Sun, DZ;  Li, XB;  Kong, MY 收藏  |  浏览/下载：18/0  |  提交时间：2019/05/12 Gallium nitride  Gas source molecular beam epitaxy  Hydrogen  Autodoping   High-concentration hydrogen in unintentionally doped GaN 期刊论文  OAI收割 journal of crystal growth, 1998, 卷号: 189, 期号: 0, 页码: 566-569 Zhang JP; Wang XL; Sun DZ; Li XB; Kong MY 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 gallium nitride  gas source molecular beam epitaxy  hydrogen  autodoping  FILMS   Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials 期刊论文  OAI收割 revista mexicana de fisica, 1998, 卷号: 44, 期号: 0, 页码: 93-96 Zou LF; Acosta-Ortiz SE; Zou LX; Regalado LE; Sun DZ; Wang ZG 收藏  |  浏览/下载：37/0  |  提交时间：2010/08/12 gas source molecular beam epitaxy  thermal stability  Si1-xGex  HETEROSTRUCTURES  STRAIN RELAXATION   High-concentration hydrogen in unintentionally doped GaN 会议论文  OAI收割 2nd international conference on nitride semiconductors (icns 97), tokushima city, japan, oct 27-31, 1997 Zhang JP; Wang XL; Sun DZ; Li XB; Kong MY 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 gallium nitride  gas source molecular beam epitaxy  hydrogen  autodoping  FILMS