机构

• 半导体研究所 [3]

采集方式

• OAI收割 [2]
• iSwitch采集 [1]

内容类型

• 会议论文 [2]
• 期刊论文 [1]

发表日期

• 2006 [1]
• 2004 [2]

学科主题

• 半导体材料 [2]

筛选

浏览/检索结果: 共3条，第1-3条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition 会议论文  OAI收割 international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005 Sun, GS (Sun, Guosheng); Ning, J (Ning, Jin); Gong, QC (Gong, Quancheng); Gao, X (Gao, Xin); Wang, L (Wang, Lei); Liu, XF (Liu, Xingfang); Zeng, YP (Zeng, Yiping); Li, JM (Li, Jinmin) 收藏  |  浏览/下载：107/29  |  提交时间：2010/03/29 homoepitaxial growth  low-pressure hot-wall CVD  structural and optical characteristics  intentional doping  Schottky barrier diodes   Fabrication of large-scale alpha-si3n4 nanotubes on si(111) by hot-wall chernical-vapor-deposition with the assistance of ga2o3 期刊论文  iSwitch采集 Applied surface science, 2004, 卷号: 229, 期号: 1-4, 页码: 9-12 作者:  Wei, QQ;  Xue, CS;  Sun, ZC;  Zhuang, HZ;  Cao, WT 收藏  |  浏览/下载：31/0  |  提交时间：2019/05/12 Hot-wall cvd  Alpha-si3n4  Nanotubes  Nano-material   Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文  OAI收割 7th international conference on solid-state and integrated circuits technology, beijing, peoples r china, oct 18-21, 2004 Sun, GS; Ning, J; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM 收藏  |  浏览/下载：221/60  |  提交时间：2010/03/29 4H-SiC  LPCVD homoepitaxial growth  thermal oxidization  MOS structures  HOT-WALL CVD