机构

• 半导体研究所 [21]
• 物理研究所 [11]
• 金属研究所 [1]
• 长春光学精密机械与物... [1]
• 高能物理研究所 [1]

采集方式

• OAI收割 [31]
• iSwitch采集 [4]

内容类型

• 期刊论文 [32]
• 会议论文 [3]

发表日期

• 2012 [1]
• 2011 [2]
• 2006 [2]
• 2005 [4]
• 2004 [2]
• 2003 [5]
• 更多

学科主题

• 半导体材料 [11]
• 半导体物理 [6]
• Physics [1]

筛选

浏览/检索结果: 共35条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Low-temperature (120 degrees C) growth of nanocrystalline silicon films prepared by plasma enhanced chemical vapor deposition from SiCl4/H-2 gases: Microstructure characterization 期刊论文  OAI收割 Applied Surface Science, 2012, 卷号: 258, 期号: 7, 页码: 3221-3226 L. Zhang; J. H. Gao; J. Q. Xiao; L. S. Wen; J. Gong; C. Sun 收藏  |  浏览/下载：18/0  |  提交时间：2013/02/05 Nanocrystalline silicon  PECVD  Microstructure  Raman spectra  hydrogenated amorphous-silicon  thin-films  raman-spectroscopy  solar-cells  mechanism  sih2cl2   Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文  OAI收割 journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125 作者:  Wang C 收藏  |  浏览/下载：85/3  |  提交时间：2011/07/05 Hydrogenated nanocrystalline silicon  Buffer layer  i/p interface  Solar cells  OPEN-CIRCUIT VOLTAGE  A-SI-H  P/I-INTERFACE  MICROCRYSTALLINE SILICON  VAPOR-DEPOSITION  FILMS  CAPACITANCE  EFFICIENCY  CRYSTALLINE  TEMPERATURE   Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文  iSwitch采集 Journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125 作者:  Liu, Shiyong;  Zeng, Xiangbo;  Peng, Wenbo;  Xiao, Haibo;  Yao, Wenjie 收藏  |  浏览/下载：39/0  |  提交时间：2019/05/12 Hydrogenated nanocrystalline silicon  Buffer layer  I/p interface  Solar cells   Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文  OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Zhang Z.-W. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit  the luminous uniformity has great improved  but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED  such as low field effect mobility  low output current and threshold voltage shift. In this article  a two-a-Si:H TFT pixel circuit was designed  which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing  the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments  the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal  the variety of Vth  is smallest  about 1.28V after a fixed stressing time of 1.33104min  which shows the novel data signal timing can improved the driving TFT output-input current stability.   Silicon thin films prepared in the transition region and their use in solar cells 期刊论文  OAI收割 solar energy materials and solar cells, 2006, 卷号: 90, 期号: 18-19, 页码: 3001-3008 Zhang S (Zhang S.); Liao X (Liao X.); Raniero L (Raniero L.); Fortunato E (Fortunato E.); Xu Y (Xu Y.); Kong G (Kong G.); Aguas H (Aguas H.); Ferreira I (Ferreira I.); Martins R (Martins R.) 收藏  |  浏览/下载：68/0  |  提交时间：2010/04/11 silicon  thin film  solar cell  HYDROGENATED AMORPHOUS-SILICON  SI  MICROSTRUCTURE   Nip a-si : h solar cells on stanless steel with p-type nc-si : h window layer 期刊论文  iSwitch采集 Acta physica sinica, 2005, 卷号: 54, 期号: 6, 页码: 2945-2949 作者:  Hu, ZH;  Liao, XB;  Diao, HW;  Xia, CF;  Zeng, XB 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Hydrogenated nanocrystalline silicon  Quantum size effect  A-si based solar cell   The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 5, 页码: 2172-2175 作者:  Zhou, BQ;  Liu, FZ;  Zhu, MF;  Gu, JH;  Zhou, YQ 收藏  |  浏览/下载：38/0  |  提交时间：2016/06/29 hydrogenated microcrystalline silicon thin film  microstructure  micro-voids  small-angle x-ray scattering   NIP a-Si : H solar cells on stanless steel with p-type nc-Si : H window layer 期刊论文  OAI收割 acta physica sinica, 2005, 卷号: 54, 期号: 6, 页码: 2945-2949 Hu ZH; Liao XB; Diao HW; Xia CF; Zeng XB; Hao HY; Kong GL 收藏  |  浏览/下载：44/14  |  提交时间：2010/03/17 hydrogenated nanocrystalline silicon   The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering 期刊论文  OAI收割 acta physica sinica, 2005, 卷号: 54, 期号: 5, 页码: 2172-2175 Zhou BQ; Liu FZ; Zhu MF; Gu JH; Zhou YQ; Liu JL; Dong BZ; Li GH; Ding K 收藏  |  浏览/下载：94/48  |  提交时间：2010/03/17 hydrogenated microcrystalline silicon thin film   Preferred growth of nanocrystalline silicon in boron-doped nc-si : h films 期刊论文  iSwitch采集 Vacuum, 2004, 卷号: 74, 期号: 1, 页码: 69-75 作者:  Wei, WS;  Wang, TM;  Zhang, CX;  Li, GH;  Han, HX 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12 Hydrogenated nanocrystalline silicon film  Boron-doped  Nanocrystalline silicon  Preferred growth electric field