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	Engineering CIGS grains qualities to achieve high efficiency in ultrathin Cu(InxGa1-x)Se-2 solar cells with a single-gradient band gap profile 期刊论文 OAI收割 RESULTS IN PHYSICS, 2019, 卷号: 12, 页码: 704-711 作者: Li, Hui; Qu, Fei; Luo, Haitian; Niu, Xiaona; Chen, Jingwei \| 收藏 \| 浏览/下载：64/0 \| 提交时间：2019/11/10 Cu(InxGa1-x)Se-2 solar cells Ultrathin High interface quality Heavy ion bombardment
	Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文 OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206 作者: Gao, J.; He, G.; Fang, Z. B.; Lv, J. G.; Liu, M. 收藏 \| 浏览/下载：18/0 \| 提交时间：2018/07/04 High-k Gate Dielectrics Interface Quality Band Alignment Electrical Properties Leakage Current Mechanism
	High-Quality Vertically Aligned Carbon Nanotubes for Applications as Thermal Interface Materials 期刊论文 OAI收割 IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2014, 卷号: 4, 期号: 2, 页码: 232-239 作者: Yao, YG (姚亚刚) 收藏 \| 浏览/下载：22/0 \| 提交时间：2015/02/03 High quality thermal interface materials (TIMs) low-thermal resistance vertically aligned carbon nanotubes (VACNTs)
	The design of SD-SDI video conversion card based on FPGA (EI CONFERENCE) 会议论文 OAI收割 2010 3rd International Conference on Advanced Computer Theory and Engineering, ICACTE 2010, August 20, 2010 - August 22, 2010, Chengdu, China 作者: He X. 收藏 \| 浏览/下载：32/0 \| 提交时间：2013/03/25 Based on the host chip of FPGA it designed digital video conversion equipment and completed the conversion between video with SD-SDI interface and Camera Link. After collecting the video from the camera demosaicing converting the color space de-interlacing interlacing and other operation the circuit implemented the real-time video conversion between both different interfaces. With much flexibility high integration and less hardware resources the whole system completed a high-quality video solution. 2010 IEEE.
	Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W. 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/03/25 In this paper Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT) Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers respectively. In PL spectra two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.