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Chinese Academy of Sciences Institutional Repositories Grid
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In-situ growth of zero-valent iron in FeOx/Mn3O4 to improve the surficial redox for high-efficient electrocatalysis of Pb(II) 期刊论文  OAI收割
CHEMICAL ENGINEERING JOURNAL, 2022, 卷号: 430
作者:  
Chen, Shi-Hua;  Zhu, Jun-Jian;  Li, Pei-Hua;  Sun, Yu-Feng;  Yang, Meng
  |  收藏  |  浏览/下载:72/0  |  提交时间:2022/01/10
Tailoring Microstructure of Graphene-Based Membrane by Controlled Removal of Trapped Water Inspired by the Phase Diagram 期刊论文  OAI收割
Advanced Functional Materials, 2014, 卷号: 24, 期号: 22, 页码: 3456-3463
W. Lv; Z. J. Li; G. M. Zhou; J. J. Shao; D. B. Kong; X. Y. Zheng; B. H. Li; F. Li; F. Y. Kang; Q. H. Yang
收藏  |  浏览/下载:65/0  |  提交时间:2015/01/14
Structural and microstructural analyses of crystalline Er2O3 high-k films grown on Si (001) by laser molecular beam epitaxy 期刊论文  OAI收割
ACTA MATERIALIA, 2011, 卷号: 59, 期号: 4, 页码: 1644-1650
作者:  
Wang, X.
  |  收藏  |  浏览/下载:15/0  |  提交时间:2021/02/02
Structural and microstructural analyses of crystalline Er(2)O(3) high-k films grown on Si (001) by laser molecular beam epitaxy 期刊论文  OAI收割
Acta Materialia, 2011, 卷号: 59, 期号: 4, 页码: 1644-1650
X. Wang; Y. L. Zhu; M. He; H. B. Lu; X. L. Ma
收藏  |  浏览/下载:14/0  |  提交时间:2012/04/13
Characterization of ZnO/Mg0.12Zn0.88O heterostructure grown by plasma-assisted molecular beam epitaxy (EI CONFERENCE) 会议论文  OAI收割
13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004
Lu Y. M.; Wu C. X.; Wei Z. P.; Zhang Z. Z.; Zhao D. X.; Zhang J. Y.; Liu Y. C.; Shen D. Z.; Fan X. W.
收藏  |  浏览/下载:30/0  |  提交时间:2013/03/25
In this paper  Mg0.12Zn0.88O/ZnO heterostructures were fabricated on c-plane sapphire (Al2O3) substrates by plasma-assisted molecular beam epitaxy (P-MBE). The quality of the Mg 0.12Zn0.88O alloy thin film was characterized by X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED). Optical properties of the Mg0.12Zn0.88O/ZnO heterostructure were studied by absorption and photoluminescence (PL) spectra. At room temperature (RT)  Mg0.12Zn0.88O/ZnO heterostructures show two absorption edges originating from ZnO and Mg 0.12Zn0.88O layers  respectively. In PL spectra  two ultraviolet emission bands related to the ZnO layer and the Mg 0.12Zn0.88O layer were observed. The emission band from Mg0.12Zn0.88O layer dominates at moderately lower temperature  and the luminescence of ZnO becomes gradually important with increasing temperature. This is suggested to exist as a potential barrier in the interface and to restrict the relaxation of the carriers from the Mg 0.12Zn0.88O layer to ZnO layer. As the thickness of ZnO layer decreases  the emission from the Mg0.12Zn0.88O layer becomes weaker and weaker. When the ZnO thickness is up to 2 nm  only the luminescence of the ZnO layer is observed at RT. The quenching of the emission corresponding to the MgZnO layer indicates the existence of a strong injection process in the samples with thinner ZnO layer. 2005 Elsevier B.V. All rights reserved.