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浏览/检索结果: 共11条，第1-10条 帮助

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Extremely low loss and high electrical resistivity in CaBi2Nb2O9 high-temperature piezoelectric ceramic by adding WO3 期刊论文  OAI收割
JOURNAL OF ALLOYS AND COMPOUNDS, 2024, 卷号: 1003
作者:  Pan, Chengbing
  |  收藏  |  浏览/下载：7/0  |  提交时间：2024/11/22
Effect of interfacial energy on microstructure of a directionally solidified Al2O3/YAG eutectic ceramic 期刊论文  OAI收割
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2018, 卷号: 101, 期号: 3, 页码: 1029-1035
作者:  Wang, X;  Zhong, YJ;  Wang, D;  Sun, LC;  Jiang, BL
  |  收藏  |  浏览/下载：42/0  |  提交时间：2018/06/05
Fluid geochemistry and geothermometry applications of the Kangding high-temperature geothermal system in eastern Himalayas 期刊论文  OAI收割
APPLIED GEOCHEMISTRY, 2017, 卷号: 81, 页码: 63-75
作者:  Guo, Qi;  Pang, Zhonghe;  Wang, Yingchun;  Tian, Jiao
  |  收藏  |  浏览/下载：32/0  |  提交时间：2017/11/16
A compact QCW conduction-cooled high power semiconductor laser array 会议论文  OAI收割
17th international conference on electronic packaging technology, icept 2016, wuhan, china, 2016-08-16
作者:  Zhu, Qiwen;  Zhang, Pu;  Wang, Shuna;  Wu, Dihai;  Nie, Zhiqiang
收藏  |  浏览/下载：41/0  |  提交时间：2016/11/22
Research Progress of High Temperature Superconducting Filters in China 期刊论文  OAI收割
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2014, 卷号: 24, 期号: 5
Sun, L; He, YS
收藏  |  浏览/下载：29/0  |  提交时间：2015/04/14
Phenolphthalein-Based Cardo Poly(arylene ether sulfone): Preparation and Application to Separation Membranes 期刊论文  OAI收割
journal of applied polymer science, 2013, 卷号: 128, 期号: 1, 页码: 1-12
Gao NA; Zhang SB
收藏  |  浏览/下载：26/0  |  提交时间：2014/04/16
Surface modification of SiC mirror by IARE method (EI CONFERENCE) 会议论文  OAI收割
7th International Conference on Thin Film Physics and Applications, September 24, 2010 - September 27, 2010, Shanghai, China
作者:  Gao J.
收藏  |  浏览/下载：23/0  |  提交时间：2013/03/25
A method to prepare high quality SiC coating at low temperature using large aperture E-beam evaporation PVD equipment with ion assistance was developed for the surface modification of SiC mirror for space projects. This method was called Ion Assisted Reactive Evaporation (IARE). The modified SiC coating was prepared using CH4 and Si with Kaufman ion source by IARE at 300C and it had met the requirements of applications. The SiC coating prepared by this method was amorphous. It was dense  homogeneous and easy to be polished. The surface modification of a SiC mirror was carried out using SiC coating by this method and achieved a fine surface modification effect. The surface roughness (rms) of the SiC substrate was reduced to 0.862nm  the scattering coefficient was reduced to 2.79% and the reflectance coated with Ag film was improved simultaneously after the surface modification. The effect of surface modification using SiC coating was close to that of using Si coating. It can be drawn that this technological method to preparation SiC coating for the surface modification of SiC mirror is reasonable and effective. 2011 SPIE.  
Theoretical and engineering research on the municipal solid waste plasma gasification 会议论文  OAI收割
International Conference on Thermal Treatment Technologies and Hazardous Waste Combustors 2011, Jacksonville, FL, United states, MAY 10-13, 2011
作者:  Sheng HZ(盛宏至);  Deng J(邓晶);  Li YJ(李要建);  Xu YX(徐永香);  Sheng HZ(盛宏至)
收藏  |  浏览/下载：41/0  |  提交时间：2013/02/26
808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者:  Wang Y.;  Wang L.;  Wang L.;  Wang L.;  Liu Y.
收藏  |  浏览/下载：22/0  |  提交时间：2013/03/25
808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.  
Effect of various niobium additions on microstructure and mechanical behavior of a NiAl-Cr-Mo eutectic alloy 期刊论文  OAI收割
Zeitschrift Fur Metallkunde, 2006, 卷号: 97, 期号: 1, 页码: 59-63
K. W. Huai; J. T. Guo; Q. Gao; R. Yang
收藏  |  浏览/下载：22/0  |  提交时间：2012/04/13