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• 半导体研究所 [59]
• 苏州纳米技术与纳米仿... [8]
• 长春光学精密机械与物... [5]
• 金属研究所 [4]
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• OAI收割 [52]
• iSwitch采集 [31]

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• 期刊论文 [82]
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• 半导体材料 [14]
• 半导体物理 [10]
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浏览/检索结果: 共83条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Heterogeneous Computational Resource Allocation for C-RAN: A Contract-Theoretic Approach 期刊论文  OAI收割 IEEE TRANSACTIONS ON SERVICES COMPUTING, 2021, 卷号: 14, 期号: 6, 页码: 2026-2040 作者:  Gao, Mingjin;  Shen, Rujing;  Yan, Shihao;  Li, Jun;  Guan, Haibing   |  收藏  |  浏览/下载：76/0  |  提交时间：2022/06/21 Contracts  Resource management  Indium phosphide  III-V semiconductor materials  Base stations  Closed-form solutions  Computer science  Heterogeneous computational resources allocation  virtualized base station  cloud-RAN  cellular networks  contract theory  incentive mechanism   Extracting more light for vertical emission: high power continuous wave operation of 1.3-m quantum-dot photonic-crystal surface-emitting laser based on a flat band 期刊论文  OAI收割 Light: Science and Applications, 2019, 卷号: 8, 期号: 1 作者:  H.-Y.Lu;  S.-C.Tian;  C.-Z.Tong;  L.-J.Wang;  J.-M.Rong   |  收藏  |  浏览/下载：32/0  |  提交时间：2020/08/24 Photonic crystals,Arsenic compounds,Crystal structure,III-V semiconductors,Indium arsenide,Nanocrystals,Quantum dot lasers,Semiconductor quantum dots,Surface emitting lasers   High quality 2-m GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy 期刊论文  OAI收割 Chinese Physics B, 2019, 卷号: 28, 期号: 3 作者:  J.-M.Shang;  J.Feng;  C.-A.Yang;  S.-W.Xie;  Y.Zhang   |  收藏  |  浏览/下载：31/0  |  提交时间：2020/08/24 Gallium compounds,Antimony compounds,III-V semiconductors,Molecular beam epitaxy,Molecular beams,Optically pumped lasers,Pumping (laser),Quantum well lasers,Semiconductor quantum wells,Silicon carbide,Silicon compounds,Tellurium compounds,Wide band gap semiconductors   Photoelectric Characteristics of Micro Flip-Chip AlGaInP Light Emitting Diode Array 期刊论文  OAI收割 Guangxue Xuebao/Acta Optica Sinica, 2018, 卷号: 38, 期号: 9 作者:  Ban, Zhang;  Liang, Jingqiu;  Lu, Jinguang;  Li, Yang   |  收藏  |  浏览/下载：48/0  |  提交时间：2019/09/17 Flip chip devices  Aluminum alloys  Copper  Diodes  Energy utilization  Gallium alloys  Heat convection  Heat resistance  III-V semiconductors  Indium alloys  Light emitting diodes  Microchannels  Numerical methods  Optical devices  Photoelectricity  Polydimethylsiloxane  Semiconductor alloys  Silicones  Temperature   Roomerature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si 期刊论文  OAI收割 ACS Photonics, 2018, 卷号: 5, 期号: 3, 页码: 699-704 作者:  Feng, Meixin;  Li, Zengcheng;  Wang, Jin;  Zhou, Rui;  Sun, Qian   |  收藏  |  浏览/下载：24/0  |  提交时间：2019/09/17 Ultraviolet lasers  Aluminum alloys  Aluminum gallium nitride  Aluminum nitride  Defects  Gallium alloys  III-V semiconductors  Lasers  Lattice mismatch  Quantum well lasers  Semiconductor alloys  Semiconductor quantum wells  Stresses  Thermal expansion   Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser 期刊论文  OAI收割 Infrared and Laser Engineering, 2018, 卷号: 47, 期号: 5 作者:  Li Xiang;  Wang Hong;  Qiao Zhongliang;  Zhang Yu;  Xu Yingqiang   |  收藏  |  浏览/下载：30/0  |  提交时间：2019/09/17 Gallium compounds  Antimony compounds  III-V semiconductors  Indium antimonides  Quantum well lasers  Semiconductor lasers  Semiconductor quantum wells   Effects of leakage current on the short circuit current in the dual-junction solar cells 期刊论文  OAI收割 OPTICAL AND QUANTUM ELECTRONICS, 2015, 卷号: 47, 期号: 2, 页码: 8 作者:  Sun, YR(孙玉润);  Li, KL(李奎龙);  Dong, JR(董建荣);  Zeng, XL(曾徐路);  Yu, SZ(于淑珍) 收藏  |  浏览/下载：35/0  |  提交时间：2015/12/31 Solar cell  Leakage current  Current mismatch  Semiconductor III-V materials  Photoelectronic device   Effects of temperature and substrate miscut on the crystalline quality of metamorphic AlInAs layers grown on GaAs substrate 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 381, 期号: 0, 页码: 70-76 作者:  Yu, SZ(于淑珍);  Yang, H(杨辉);  Dong, JR(董建荣);  Zhao, YM(赵勇明) 收藏  |  浏览/下载：20/0  |  提交时间：2014/01/13 Atomic force microscopy  Stresses  Metalorganic chemical vapor deposition  Semiconductor III-V materials   Effects of substrate miscut on dislocation glide in metamorphic (Al) GaInP buffers 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2013, 卷号: 380, 期号: 0, 页码: 261-267 作者:  Li, KL;  Sun, YR;  Dong, JR(董建荣);  Zhao, YM;  Yu, SZ 收藏  |  浏览/下载：16/0  |  提交时间：2014/01/13 Stresses  X-ray diffraction  Metal-organic chemical vapor deposition  Semiconductor III-V materials   Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition 期刊论文  OAI收割 J. Crystal Growth, 2012, 卷号: 49, 期号: 43, 页码: 101 作者:  S.Z. Yu（于淑珍）;  Y.M. Zhao（赵勇明）;  H. Yang(杨辉);  J.R. Dong（董建荣） 收藏  |  浏览/下载：24/0  |  提交时间：2013/01/16 X-ray diffraction  Stresses  Metalorganic chemical vapor deposition  Semiconductor III–V materials