中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
机构
采集方式
内容类型
发表日期
学科主题
筛选

浏览/检索结果: 共5条,第1-5条 帮助

条数/页: 排序方式:
Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates 期刊论文  OAI收割
SUPERLATTICES AND MICROSTRUCTURES, 2019, 卷号: 129, 页码: 20-27
作者:  
Xu, Houqiang;  Jiang, Jie'an;  Sheikhi, Moheb;  Chen, Zhaoying;  Hoo, Jason
  |  收藏  |  浏览/下载:33/0  |  提交时间:2019/12/18
Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer 期刊论文  OAI收割
Journal of Applied Physics, 2012, 卷号: 112, 期号: 8
P. F. Yan; K. Du; M. L. Sui
收藏  |  浏览/下载:97/0  |  提交时间:2013/02/05
A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文  OAI收割
applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356
作者:  
Wei HY;  Song HP
收藏  |  浏览/下载:145/13  |  提交时间:2010/04/22
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy 期刊论文  OAI收割
applied physics letters, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962
Ng YF; Cao YG; Xie MH; Wang XL; Tong SY
收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
MOCVD growth of cubic GaN: Materials and devices 会议论文  OAI收割
international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000
作者:  
Zhao DG;  Zhang SM
收藏  |  浏览/下载:22/0  |  提交时间:2010/10/29