中国科学院机构知识库网格系统: 检索

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	Single peak deep ultraviolet emission and high internal quantum efficiency in AlGaN quantum wells grown on large miscut sapphire substrates 期刊论文 OAI收割 SUPERLATTICES AND MICROSTRUCTURES, 2019, 卷号: 129, 页码: 20-27 作者: Xu, Houqiang; Jiang, Jie'an; Sheikhi, Moheb; Chen, Zhaoying; Hoo, Jason \| 收藏 \| 浏览/下载：33/0 \| 提交时间：2019/12/18 SURFACE-MORPHOLOGY GAN FILMS KINETICS QUALITY TERNARY INGAN BLUE
	Pyramidal dislocation induced strain relaxation in hexagonal structured InGaN/AlGaN/GaN multilayer 期刊论文 OAI收割 Journal of Applied Physics, 2012, 卷号: 112, 期号: 8 P. F. Yan; K. Du; M. L. Sui 收藏 \| 浏览/下载：97/0 \| 提交时间：2013/02/05 quantum-well structures light-emitting-diodes deformation mechanisms metallic multilayers thin-films misfit dislocations ingan epilayers composites interfaces gan
	A study of indium incorporation in In-rich InGaN grown by MOVPE 期刊论文 OAI收割 applied surface science, 2010, 卷号: 256, 期号: 10, 页码: 3352-3356 作者: Wei HY; Song HP 收藏 \| 浏览/下载：145/13 \| 提交时间：2010/04/22 MOVPE In-rich InGaN Indium incorporation MOLECULAR-BEAM EPITAXY CHEMICAL-VAPOR-DEPOSITION CRITICAL THICKNESS DROPLET FORMATION PHASE-SEPARATION TEMPERATURE FILMS HETEROSTRUCTURES IMMISCIBILITY INXGA1-XN
	Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy 期刊论文 OAI收割 applied physics letters, 2002, 卷号: 81, 期号: 21, 页码: 3960-3962 Ng YF; Cao YG; Xie MH; Wang XL; Tong SY 收藏 \| 浏览/下载：44/0 \| 提交时间：2010/08/12 MISFIT DISLOCATIONS DEFECTS INGAN GAN REDUCTION INDIUM LAYERS FILMS
	MOCVD growth of cubic GaN: Materials and devices 会议论文 OAI收割 international workshop on nitride semiconductors (iwn 2000), nagoya, japan, sep 24-27, 2000 作者: Zhao DG; Zhang SM 收藏 \| 浏览/下载：22/0 \| 提交时间：2010/10/29 MOCVD GaN InGaN cubic LED CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY GALLIUM NITRIDE PHASE EPITAXY INGAN FILMS ELECTROLUMINESCENCE ZINCBLENDE WURTZITE MBE