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	Micro-electro-mechanical systems capacitive ultrasonic transducer with a higher electromechanical coupling coefficient 期刊论文 OAI收割 Micro & Nano Letters, 2015, 卷号: 10, 期号: 10, 页码: 4 作者: Miao, J(苗静); Shen, WJ(沈文江); He, CD; Xue, CY; Xiong, JJ 收藏 \| 浏览/下载：88/0 \| 提交时间：2015/12/31 silicon elemental semiconductors silicon-on-insulator wafer bonding electromechanical effects ultrasonic transducers capacitive transducers micromechanical devices micromachining vibrations membranes finite element analysis reliability capacitance electromechanical coupling coefficient capacitive micromachined ultrasonic transducer impedance matching propagation medium microelectromechanical system capacitive ultrasonic transducer silicon on insulator wafer bonding optimum geometric dimensions membrane mechanical vibration electrical characteristics finite-element analysis operation mode device safety device reliability equivalent stress operation-collapse voltage bottom electrodes glass substrate surface parallel parasitic capacitance Si SiO2
	Effect of composition and strain on the electrical properties of LaNiO3 thin films 期刊论文 OAI收割 Applied Physics Letters, 2013, 卷号: 103, 期号: 14 M. W. Zhu; P. Komissinskiy; A. Radetinac; M. Vafaee; Z. J. Wang; L. Alff 收藏 \| 浏览/下载：22/0 \| 提交时间：2013/12/24 pulsed-laser deposition metal-insulator-transition metalorganic decomposition ferroelectric properties electronic-properties growth diffraction fabrication substrate
	Study of the fabrication of ZnO-TFT (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者: Wang C. 收藏 \| 浏览/下载：29/0 \| 提交时间：2013/03/25 Znic Oxide (ZnO) as a shorter wavelength luminescent material concerning its outstanding properties of a wide band-gap semiconductor it can be used as the active channel layer to fabricate thin film transistor (TFT) and transparent thin film transistor(TTFT). In this paper we introduced ZnO-TFT using different substrate material insulator material electrode material of gate source and drain in its device.
	The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者: Wang C. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.
	Nanofabrication based on MEMS technology 期刊论文 OAI收割 IEEE SENSORS JOURNAL, 2006, 卷号: 6, 期号: 3, 页码: 686-690 Wang, YL; Li, XX; Li, T; Yang, H; Jiao, JW 收藏 \| 浏览/下载：11/0 \| 提交时间：2011/11/08 ON-INSULATOR SUBSTRATE IMPRINT LITHOGRAPHY ROOM-TEMPERATURE SILICON FABRICATION SI RESONATORS RESOLUTION OPERATION FILMS
	Fabrication of SGOI material by oxidation of an epitaxial SiGe layer on an SOI wafer with H ions implantation 期刊论文 OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 卷号: 234, 期号: 3, 页码: 243-248 Cheng,XL; Chen,ZJ; Wang,YJ; Jin,B; Zhang,F; Zou,SC 收藏 \| 浏览/下载：29/0 \| 提交时间：2012/03/24 HOLE MOBILITY ENHANCEMENT HIGH-GE FRACTION STRAINED-SI INSULATOR SUBSTRATE N-MOSFETS ELECTRON ULTRATHIN