机构

• 半导体研究所 [5]
• 西安光学精密机械研究... [3]

采集方式

• OAI收割 [5]
• iSwitch采集 [3]

内容类型

• 期刊论文 [8]

发表日期

• 2019 [1]
• 2013 [1]
• 2011 [4]
• 2009 [2]

学科主题

• instrument... [1]
• 光电子学 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共8条，第1-8条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Sulfide treatment passivation of mid-/long-wave dual-color infrared detectors based on type-II InAs/GaSb superlattices 期刊论文  OAI收割 OPTICAL AND QUANTUM ELECTRONICS, 2019, 卷号: 51, 期号: 3 作者:  Guo, Chunyan;  Jiang, Zhi;  Jiang, Dongwei;  Wang, Guowei;  Xu, Yingqiang   |  收藏  |  浏览/下载：89/0  |  提交时间：2019/03/21 Dual-color infrared detectors  InAs  GaSb superlattices  Molecular beam epitaxy  Sulfide treatment passivation   In-plane optical anisotropy of inas/gasb superlattices with alternate interfaces 期刊论文  iSwitch采集 Nanoscale research letters, 2013, 卷号: 8, 期号: 1 作者:  Wu,Shujie;  Chen,Yonghai;  Yu,Jinling;  Gao,Hansong;  Jiang,Chongyun 收藏  |  浏览/下载：41/0  |  提交时间：2019/05/12 In-plane optical anisotropy  Inas/gasb superlattices  Reflectance difference spectroscopy   InAs/GaSb type-II superlattice grown by MOCVD for long-wavelength infrared detection 期刊论文  OAI收割 optoelectronics and advanced materials-rapid communications, 2011, 卷号: 5, 期号: 9, 页码: 1017-1020 作者:  Xin, Liwei;  Wang, Tao;  Yang, Jin;  Wang, Jingwei;  Yin, Fei 收藏  |  浏览/下载：35/0  |  提交时间：2014/01/07 B1.InAs/GaSb  A3.superlattices  A3.source flux control  A3.MOCVD  A1.PL spectra   Effect of compensation doping on the electrical and optical properties of mid-infrared type-ii inas/gasb superlattice photodetectors 期刊论文  iSwitch采集 Chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: 6 作者:  Wang Yong-Bin;  Xu Yun;  Zhang Yu;  Yu Xiu;  Song Guo-Feng 收藏  |  浏览/下载：43/0  |  提交时间：2019/05/12 Inas/gasb superlattices  P-doping concentration  Electrical and optical properties   InAs/GaSb superlattices grown by LP-MOCVD for similar to 10 mu m wavelength infrared range 期刊论文  OAI收割 infrared physics & technology, 2011, 卷号: 54, 期号: 6, 页码: 478-481 作者:  YinFei 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/29 InAs/GaSb superlattices  InAsSb interface layer  Growth temperature  LP-MOCVD   Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors 期刊论文  OAI收割 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 067302 Wang YB; Xu Y; Zhang Y; Yu X; Song GF; Chen LH 收藏  |  浏览/下载：58/4  |  提交时间：2011/07/07 InAs/GaSb superlattices  p-doping concentration  electrical and optical properties   Inas/gasb superlattices for photodetection in short wavelength infrared range 期刊论文  iSwitch采集 Infrared physics & technology, 2009, 卷号: 52, 期号: 4, 页码: 124-126 作者:  Guo, Jie;  Peng, Zhenyu;  Sun, Weiguo;  Xu, Yingqiang;  Zhou, Zhiqiang 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12 Superlattices  Inas/gasb  Short wavelength  Infrared detector   InAs/GaSb superlattices for photodetection in short wavelength infrared range 期刊论文  OAI收割 infrared physics & technology, 2009, 卷号: 52, 期号: 4, 页码: 124-126 作者:  Xu YQ 收藏  |  浏览/下载：82/21  |  提交时间：2010/03/08 Superlattices  InAs/GaSb  Short wavelength  Infrared detector