机构

• 长春光学精密机械与物... [2]
• 上海微系统与信息技术... [2]
• 半导体研究所 [2]
• 新疆理化技术研究所 [1]

采集方式

• OAI收割 [6]
• iSwitch采集 [1]

内容类型

• 期刊论文 [3]
• 会议论文 [2]
• 学位论文 [2]

发表日期

• 2020 [1]
• 2008 [1]
• 2006 [2]
• 2005 [1]
• 2003 [1]
• 2001 [1]
• 更多

学科主题

• 光电子学 [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 Degradation characteristics of electron and proton irradiated InGaAsP/InGaAs dual junction solar cell 期刊论文  OAI收割 SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 206, 期号: 3, 页码: 1-7 作者:  Zhao, XF (Zhao, X. F.)[ 1 ];  Aierken, A (Aierken, A.)[ 1,2 ];  Heini, M (Heini, M.)[ 1,3 ];  Tan, M (Tan, M.)[ 4 ];  Wu, YY (Wu, Y. Y.)[ 4 ]   |  收藏  |  浏览/下载：25/0  |  提交时间：2020/04/21 InGaAsP/InGaAs solar cell  Electron and proton irradiation  Degradation  Equivalent displacement damage dose model   新型结构HBT设计与材料生长研究 学位论文  OAI收割 博士: 中国科学院研究生院（上海微系统与信息技术研究所）  , 2008 艾立鹍 收藏  |  浏览/下载：118/0  |  提交时间：2012/03/06 异质结双极晶体管（HBT）  　气态源分子束外延（GSMBE）  　GaAs  　InP  　InGaP  　InGaAs  　InGaAsP   Material growth and device fabrication of highly strained ingaas/ingaasp long wavelength distributed feedback lasers 期刊论文  iSwitch采集 Acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 5216-5220 作者:  Pan Jiao-Qing;  Zhao Qian;  Zhu Hong-Liang;  Zhao Ling-Juan;  Ding Ying 收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12 Mocvd  Ingaas/ingaasp  Strained quantum well  Distributed feedback laser   Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers 期刊论文  OAI收割 acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 5216-5220 Pan JQ (Pan Jiao-Qing); Zhao Q (Zhao Qian); Zhu HL (Zhu Hong-Liang); Zhao LJ (Zhao Ling-Juan); Ding Y (Ding Ying); Wang BJ (Wang Bao-Jun); Zhou F (Zhou Fan); Wang LF (Wang Lu-Feng); Wang W (Wang Wei) 收藏  |  浏览/下载：73/0  |  提交时间：2010/04/11 MOCVD  InGaAs/InGaAsP  strained quantum well  distributed feedback laser  TUNABLE DIODE-LASER  QUANTUM-WELL LASER  1.74 MU-M  SPECTROMETER  METHANE  POWER   Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China 作者:  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：21/0  |  提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission  amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm  dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.   半导体激光器的热特性及封装技术研究 学位论文  OAI收割 硕士: 中国科学院研究生院（上海微系统与信息技术研究所）  , 2003 何友军   收藏  |  浏览/下载：38/0  |  提交时间：2012/03/06 半导体激光器:7882  热特性:3125  封装技术:3105  多量子阱激光器:2255  量子级联激光器:2255  脊波导:1571  InGaAsP:1362  InGaAs／InP:1181  散热效果:1168  烧结方式:1092     InGaAs/InGaAsP microdisk lasers grown by GSMBE (EI CONFERENCE) 会议论文  OAI收割 11th International Conference on Molecular Beam Epitaxy, September 11, 2000 - September 15, 2000, Bijing, China Wu G.; Wang X. H.; Zheng Q.; Ren D. C.; Zhang X. D. 收藏  |  浏览/下载：18/0  |  提交时间：2013/03/25 Optical resonance modes have been observed in optically pumped microdisk cavities fabricated from 80 A/50 A InGaAs/InGaAsP multiple quantum wells structures grown by gas-source molecular beam epitaxy. We have achieved optically pumped InGaAs/InGaAsP multiquantum wells microdisk lasers at a pump power threshold of Pth = 150 W at pump wavelength = 514.5 nm  which was measured for a 10 m-diameter disk with lasing emission wavelength near = 1.6 m. 2001 Elsevier Science B.V.