机构

• 福建物质结构研究所 [2]
• 长春光学精密机械与物... [1]
• 中国科学院大学 [1]
• 半导体研究所 [1]

采集方式

• OAI收割 [4]
• iSwitch采集 [1]

内容类型

• 期刊论文 [4]
• 会议论文 [1]

发表日期

• 2016 [1]
• 2009 [2]
• 2005 [1]
• 2001 [1]

学科主题

• 半导体物理 [1]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择作者升序作者降序发表日期升序发表日期降序题名升序题名降序提交时间升序提交时间降序 Detailed study of the influence of ingaas matrix on the strain reduction in the inas dot-in-well structure 期刊论文  iSwitch采集 Nanoscale research letters, 2016, 卷号: 11, 期号: 1 作者:  Wang,Peng;  Chen,Qimiao;  Wu,Xiaoyan;  Cao,Chunfang;  Wang,Shumin 收藏  |  浏览/下载：65/0  |  提交时间：2019/05/09 Quantum dots  Inas/ingaas  Dot-in-well  Ingaas matrix  Photoluminescence  Finite element  Afm  Tem   The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells 期刊论文  OAI收割 Superlattices and Microstructures, 2009, 卷号: 46, 期号: 4, 页码: 618-626 S. D. Wu, Z. Huang, Y. Liu, Q. F. Huang, W. Guo and Y. G. Cao 收藏  |  浏览/下载：61/0  |  提交时间：2012/11/06 Indium segregation  Transfer matrix method  Exciton binding energy  Exciton oscillator strength  molecular-beam-epitaxy  surface segregation  electric-field  ingaas  layers  growth  atoms  profile  matrix   The effects of indium segregation on exciton binding energy and oscillator strength in GaInAs/GaAs quantum wells 期刊论文  OAI收割 Superlattices and Microstructures, 2009, 卷号: 46, 期号: 4, 页码: 618-626 S. D. Wu, Z. Huang, Y. Liu, Q. F. Huang, W. Guo and Y. G. Cao 收藏  |  浏览/下载：62/0  |  提交时间：2012/11/06 Indium segregation  Transfer matrix method  Exciton binding energy  Exciton oscillator strength  molecular-beam-epitaxy  surface segregation  electric-field  ingaas  layers  growth  atoms  profile  matrix   Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割 ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China 作者:  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L. 收藏  |  浏览/下载：42/0  |  提交时间：2013/03/25 By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.   InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy 期刊论文  OAI收割 journal of applied physics, 2001, 卷号: 89, 期号: 7, 页码: 4186-4188 作者:  Ye XL;  Xu B 收藏  |  浏览/下载：162/18  |  提交时间：2010/08/12 MATRIX  ISLANDS  INGAAS