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	Epitaxially-Stacked High Efficiency Laser Diodes Near 905 nm 期刊论文 OAI收割 IEEE PHOTONICS JOURNAL, 2022, 卷号: 14, 期号: 6 作者: Zhao, Yuliang; Yang, Guowen; Zhao, Yongming; Tang, Song; Lan, Yu \| 收藏 \| 浏览/下载：50/0 \| 提交时间：2022/11/08 Epitaxial growth Resistance Doping Optical losses Optical device fabrication Stacking Optical refraction Epitaxial stacking high efficiency laser diode low optical loss n-doping concentration power scaling specific resistance tunnel junction
	Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes 期刊论文 OAI收割 THIN SOLID FILMS, 2011, 卷号: 520, 期号: 1, 页码: 445 Zheng, H; Mei, ZX; Zeng, ZQ; Liu, YZ; Guo, LW; Jia, JF; Xue, QK; Zhang, Z; Du, XL 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/09/17 EMITTING-DIODES ROOM-TEMPERATURE OHMIC CONTACTS JUNCTION DIODE LOW-RESISTANCE HETEROSTRUCTURE DEVICES
	Effect of Schottky barrier on the transport property in perovskite oxide heterostructures 期刊论文 OAI收割 PHYSICA B-CONDENSED MATTER, 2009, 卷号: 404, 期号: 8-11, 页码: 1332 Han, P; Lu, HB; Jin, KJ; Jia, JF; Qiu, J; Hu, CL; Liao, L 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/09/17 P-N-JUNCTION SRTIO3 DIODE HETEROJUNCTION
	808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者: Wang Y.; Wang L.; Wang L.; Wang L.; Liu Y. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.
	The influence of interband tunneling on leakage current in manganite/titanate heterojunction 期刊论文 OAI收割 PHYSICS LETTERS A, 2008, 卷号: 372, 期号: 29, 页码: 4943 Han, P; Jia, JF 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/09/23 POSITIVE MAGNETORESISTANCE ROOM-TEMPERATURE 2 OXIDES SRTIO3 FILMS MECHANISM JUNCTION DIODE
	High Efficiency 1.9 kW Single Diode Laser Bar Epitaxially Stacked with a Tunnel Junction 期刊论文 OAI收割 IEEE Photonics Journal 作者: Zhao, Yuliang; Wang, Zhenfu; Demir, Abdullah; Yang, Guowen; Ma, Shufang \| 收藏 \| 浏览/下载：17/0 \| 提交时间：2021/05/08 semiconductor laser diode laser bar high power power conversion efficiency tunnel junction