机构

• 半导体研究所 [5]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [4]
• iSwitch采集 [2]

内容类型

• 期刊论文 [5]
• 会议论文 [1]

发表日期

• 2007 [2]
• 2005 [2]
• 2002 [2]

学科主题

• 光电子学 [1]
• 半导体材料 [1]
• 半导体物理 [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Preferential orientation growth of ain thin films on si (111) substrates by lp-mocvd 期刊论文  iSwitch采集 Modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445 作者:  Zhao, Yongmei;  Sun, Guosheng;  Liu, Xingfang;  Li, Jiaye;  Zhao, Wanshun 收藏  |  浏览/下载：35/0  |  提交时间：2019/05/12 Aluminum nitride  Low pressure metalorganic chemical vapor deposition (lp-mocvd)  V/iii ratio  Preferential orientation growth mechanism   Preferential orientation growth of AIN thin films on Si (111) substrates by LP-MOCVD 期刊论文  OAI收割 modern physics letters b, 2007, 卷号: 21, 期号: 22, 页码: 1437-1445 Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Luo, MC; Li, JM 收藏  |  浏览/下载：53/0  |  提交时间：2010/03/08 aluminum nitride  low pressure metalorganic chemical vapor deposition (LP-MOCVD)  V/III ratio  preferential orientation growth mechanism   Formation and characteristics of quantum dots of wide band gap II-VI semiconductor (EI CONFERENCE) 会议论文  OAI收割 Fifth International Conference on Thin Film Physics and Applications, May 31, 2004 - June 2, 2004, Shanghai, China Fan X. W.; Shan C. X.; Yang Y.; Zhang J. Y.; Liu Y. C.; Lu Y. M.; Shen D. Z. 收藏  |  浏览/下载：29/0  |  提交时间：2013/03/25 CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The formation process of CdSe QDs below critical thickness was observed by atomic force microscopy (AFM). The formation mechanism of CdSe QDs below the critical thickness was due to the effect of surface diffusion and strain release. ZnCdSe QDs were grown based on the calculated critical thickness. Two kinds of variations in the ZnCdSe QDs appeared over time  the Ostwald ripening process and dot formation process. ZnSeS dots were grown under Volmer-Weber (V-W) mode. With increasing the growth duration  the size of dots becomes larger and the density decreases  which is explained by virtue of the surface free energy.   Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 8, 页码: 882-885 Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W 收藏  |  浏览/下载：119/47  |  提交时间：2010/03/17 摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA  output light power of 4.5 mW  and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover  over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device  10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.   Ecr plasma in growth of cubic gan by low pressure mocvd 期刊论文  iSwitch采集 Plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174 作者:  Gu, B;  Xu, Y;  Qin, FW;  Wang, SS;  Sui, Y 收藏  |  浏览/下载：39/0  |  提交时间：2019/05/12 Ecr plasma  Cubic gan  Low pressure mocvd   ECR plasma in growth of cubic GaN by low pressure MOCVD 期刊论文  OAI收割 plasma chemistry and plasma processing, 2002, 卷号: 22, 期号: 1, 页码: 159-174 Gu B; Xu Y; Qin FW; Wang SS; Sui Y; Wang ZG 收藏  |  浏览/下载：93/7  |  提交时间：2010/08/12 ECR plasma  cubic GaN  low pressure MOCVD  MOLECULAR-BEAM EPITAXY  CYCLOTRON-RESONANCE PLASMA  LIGHT-EMITTING-DIODES  VAPOR-PHASE EPITAXY  GALLIUM NITRIDE  GAAS  DIMETHYLHYDRAZINE