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浏览/检索结果: 共26条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Spatiotemporal Summation and Recognition Effects for a Dual-Emitter Light-Induced Neuromorphic Device 期刊论文  OAI收割 Ieee Transactions on Electron Devices, 2018, 卷号: 65, 期号: 1, 页码: 308-313 作者:  Yang, Y. C.;  Shi, Z.;  Zhu, B. C.;  Yuan, J. L.;  Zhu, G. X.   |  收藏  |  浏览/下载：18/0  |  提交时间：2019/09/17 Adding together behavior  dual emitter light-induced neuromorphic  device  excitatory postsynaptic voltage (EPSV)  InGaN  multiple-quantum-well diodes (MQW-diodes)  resonant summation effect  (RSE)  plasticity  synapse  transistor  Engineering  Physics   Drive circuit for spatial light modulator with software preprocessing unit 期刊论文  OAI收割 Analog Integrated Circuits and Signal Processing, 2010, 期号: 2 作者:  Zhang YH (张耀辉) 收藏  |  浏览/下载：19/0  |  提交时间：2010/12/13 Drive circuit  Software preprocessing unit  Multi-quantum-well (MQW) spatial light modulator (SLM)  High grayscale resolution   Research on AlInGaN Quaternary Alloys as MQW Barriers in GaN-Based Laser Diodes 期刊论文  OAI收割 SPECTROSCOPY AND SPECTRAL ANALYSIS, 2009, 卷号: 29, 期号: 6, 页码: 1441-1444 作者:  Chen, WH;  Liao, H;  Hu, XD;  Li, R;  Jia, QJ 收藏  |  浏览/下载：19/0  |  提交时间：2016/06/29 GaN-based LD  Multi-quantum-well (MQW)  AlInGaN  Barrier material   Mid-infrared optoelectronic devices and applications 期刊论文  OAI收割 AOE 2007: ASIA OPTICAL FIBER COMMUNICATION & OPTOELECTRONIC EXPOSITION & CONFERENCE, CONFERENCE PROCEEDINGS, 2008, 页码: 60-62 Zhang, YG(张永刚）; Li, AZ 收藏  |  浏览/下载：30/0  |  提交时间：2012/03/24 QUANTUM CASCADE LASERS  MOLECULAR-BEAM EPITAXY  WELL INFRARED PHOTODETECTORS  MU-M  MQW LASERS  PERFORMANCE  ANTIMONIDE  BEHAVIOR  GROWTH   Tunable diode laser absorption spectroscopy detection of N2O at 2.1 mu m using antimonide laser and InGaAs photodiode 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 8, 页码: 2301-2303 Zhang, YG(张永刚）; Zhang, XJ; Zhu, XR; Li, AZ; Liu, S 收藏  |  浏览/下载：22/0  |  提交时间：2012/03/24 QUANTUM CASCADE LASERS  TRACE GAS-DETECTION  SEMICONDUCTOR-LASERS  MQW LASERS  TUNABILITY   An innovative gas sensor with on-chip reference using monolithic twin laser 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2007, 卷号: 24, 期号: 10, 页码: 2839-2841 Zhang, YG(张永刚）; Tian, ZB; Zhang, XJ; Gu, Y; Li, AZ; Zhu, XR; Zheng, YL; Liu, S 收藏  |  浏览/下载：31/0  |  提交时间：2012/03/24 QUANTUM CASCADE LASERS  2.1 MU-M  DIODE-LASERS  SEMICONDUCTOR-LASERS  MQW LASERS  ANTIMONIDE  TUNABILITY   A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD 期刊论文  OAI收割 semiconductor science and technology, 2006, 卷号: 21, 期号: 3, 页码: 306-310 Zhang RY; Wang W; Zhou F; Wang BJ; Wang LF; Bian J; Zhao LJ; Zhu HL; Jian SS 收藏  |  浏览/下载：58/0  |  提交时间：2010/04/11 LINEWIDTH ENHANCEMENT FACTOR  THRESHOLD CURRENT-DENSITY  DIFFERENTIAL GAIN  MQW LASERS   Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Devices and Integration, November 8, 2004 - November 11, 2004, Beijing, China 作者:  Wang L.;  Wang L.;  Wang L. 收藏  |  浏览/下载：17/0  |  提交时间：2013/03/25 Long wavelength InGaAs/InGaAsP multiple quantum well laser is grown by MOCVD. The characteristics of spontaneous emission  amplified spontaneous emission and modal gain of the MQW is investigated by using single-pass multi-section technique. The amplified spontaneous emission is around a wavelength of 1500nm  dependent on the temperature and the current density. The modal gain spectra show a red shift with increasing temperature. The peak modal gain exhibits a decrease with increasing temperature from 140K to 300K. The loss measurements shows that the main loss mechanism in the structure might be the free carrier absorption in the doped cladding layers and a internal modal loss of about 10cm-1.   Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers 期刊论文  OAI收割 Ieee Photonics Technology Letters, 2005, 卷号: 17, 期号: 2, 页码: 276-278 J. Y. Jin; J. Shi; D. C. Tian 收藏  |  浏览/下载：21/0  |  提交时间：2012/04/14 cavity length  high-temperature performance  multiquantum-well (MQW)  output power degradation  semiconductor lasers  stripe width  efficiency  mode   Tandem electroabsorption modulators integrated with DFB laser by ultra-low-pressure selective-area-growth MOCVD for 10 GHz optical short pulse generation 期刊论文  OAI收割 semiconductor science and technology, 2005, 卷号: 20, 期号: 8, 页码: 882-885 Zhao, Q; Pan, JQ; Zhang, J; Zhou, GT; Wu, J; Wang, LF; Wang, W 收藏  |  浏览/下载：119/47  |  提交时间：2010/03/17 摘要: A novel device of tandem MQW EAMs monolithically integrated with a DFB laser is fabricated by an ultra-low-pressure (22 mbar) selective area growth MOCVD technique. Experimental results exhibit superior device characteristics with low threshold of 19 mA  output light power of 4.5 mW  and over 20 dB extinction ratio when coupled to a single mode fibre. Moreover  over 10 GHz modulation bandwidth is developed with a driving voltage of 2 V. Using this sinusoidal voltage driven integrated device  10 GHz repetition rate pulse with an actual width of 13.7 ps without any compression elements is obtained.