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	Coating SiC on Zircaloy-4 by magnetron sputtering at room temperature 期刊论文 OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 卷号: 730, 页码: 81, 87 作者: Bao, Weichao; Xue, Jiaxiang; Liu, Ji-Xuan; Wang, Xingang; Gu, Yifeng \| 收藏 \| 浏览/下载：51/0 \| 提交时间：2018/12/28 Magnetron sputtering Nanocrystalline SiC coating on Zircaloy-4 Morphology of films Mechanical properties
	Tribological properties of Mos2 thin coatings under liquid lubricating (EI CONFERENCE) 会议论文 OAI收割 2nd International Conference on Innovation Manufacturing and Engineering Management, IMEM 2012, December 14, 2012 - December 16, 2012, Chongqing, China Bai Y.; Cao P. 收藏 \| 浏览/下载：33/0 \| 提交时间：2013/03/25 The objective of this study is to investigate the effect of solid and liquid lubrication on friction and wear performance of selected solid lubricating coatings comparative experiments have been carried out on magnetron sputtered MoS2 coatings against Si3N4 ball using a ball-on-disk tribo-tester under the conditions of room temperature and different lubrication. Surface morphology of coatings were investigated by atom force microscope (AFM) and friction coefficient (COF) and wear rate of solid films were also be analyzed. It was shown that the friction is greatly reduced when the solid film is lubricated with oil and grease simultaneously in comparison with single-lubricant lubrication at the start-up or under boundary lubrication conditions. Liquid lubrication causes a dramatic decrease of the wear-ability of the MoS2 coatings. The effect of oil lubrication to the deterioration of wear resistance of MoS2 film was even worse than lubrication grease. (2013) Trans Tech Publications Switzerland.
	ZnO films growth at different temperature on the substrate of Corning glass by MOCVD (EI CONFERENCE) 会议论文 OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者: Zhao J.; Gao X.; Wang C.; Tang W. 收藏 \| 浏览/下载：25/0 \| 提交时间：2013/03/25 We deposited ZnO films on Corning glass substrate by metal-organic chemical vapor deposition (MOCVD). We found the diffraction (002) peak at ~34.46 indicating that the ZnO thin films were C-oriented. ZnO films were highly transparent with a transmission ratio larger than 85% in the visible range. The surface morphology of the films was observed by atomic force microscopy (AFM). (2010) Trans Tech Publications.
	Growth of ZnO films under different oxygen partial pressures by metal organic chemical vapour deposition (EI CONFERENCE) 会议论文 OAI收割 2009 International Symposium on Liquid Crystal Science and Technology, August 2, 2009 - August 5, 2009, Kunming, China 作者: Gao X.; Zhao J.; Tang W.; Wang C. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 ZnO films were grown under different oxygen partial pressures by metal organic chemical vapor deposition on the substrates of Corning glass. We investigated the quality of the films by SIEMENS D8 X-ray diffractometer. The surface morphology of the films were observed by Digital Nanoscope IIIa AFM with normal silicon nitride tip in the contact mode. The hall effect measurements were carried out with indium ohmic contact. The transmission spectrum of the films were measured. The transmission ratio is larger than 80% in the region above the wavelength of 385nm and sharply decreased under 10% below the wavelength of 375 nm. (2010) Trans Tech Publications.
	The synthesis and field emission property of carbon nanotubes on carbon fibers substrate (EI CONFERENCE) 会议论文 OAI收割 Technical Digest of the 20th International Vacuum Nanoelectronics Conference, IVNC 07, July 8, 2008 - July 12, 2008, Chicago, IL, United states Leyong Z.; Weibiao W.; Jingqiu L.; Yuxue X.; Da L.; Song C.; Haifeng Z. 收藏 \| 浏览/下载：30/0 \| 提交时间：2013/03/25 Using ferrocene as catalyst precursor C2H2 as carbon source carbon nanotubes (CNTs) with uniform density were synthesized on carbon fibers substrate by floating catalyst method. The morphology and microstructure were characterized by field emission scanning electron microscope (FESEM) and high-resolution transmission electron microscopy (HRTEM). The observation showed that the length of CNTs is about 2 m the average space between adjacent CNTs is about 300 nm and the diameter of CNT is about 45 nm. The less dense "short and stubby" aligned CNTs films should have good electron field emission characteristics. The results of field emission showed that the emission current of CNTs/carbon fibers was 5 A at the field of 2.5 V/m and the emission current can be 280 A with a field of 7 V/m (the specimen area is 0.25 cm2 and the distance between cathode and anode is 200 m). The calculation based on the F-N plot indicated that the field enhancement factor of CNTs tip is 499122. Using the conductivity and chemical stability of carbon fibers and the uniform and sparse density distribution of CNTs on carbon fibers substrate the tip predominance of carbon nanotubes can be exerted and simultaneously the effect of screening effects between adjacent carbon nanotubes on the field emission performance can also be effectively decreased. The CNTs synthesized on carbon fibers substrate has many predominances for the fabrication of cold cathode devices. For example using the removability of carbon fibers the cathode of CNTs/carbon fibers can be arbitrarily moved enlaced or combined to form different patterns and the cathode of CNTs/carbon fibers can be also fabricated in large size. Therefore CNTs/carbon fibers may have potential application in field emission displays.
	Studies on confined crystallization behavior of polycaprolactone thin films 期刊论文 OAI收割 ACTA POLYMERICA SINICA, 2006, 期号: 8, 页码: 964-969 作者: Qiao Congde; Jiang Shichun; Ji Xiangling; An Lijia; Jiang Bingzheng \| 收藏 \| 浏览/下载：16/0 \| 提交时间：2019/04/09 Pcl Ultrathin Films Crystalline Morphology Afm Radius Of Gyration Diffusion-limited Aggregation
	Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy (EI CONFERENCE) 会议论文 OAI收割 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004, 13th International Conference on Molecular Beam Epitaxy, August 22, 2004 - August 27, 2004 Liang H. W.; Lu Y. M.; Shen D. Z.; Yan J. F.; Li B. H.; Zhang J. Y.; Liu Y. C.; Fan X. W. 收藏 \| 浏览/下载：35/0 \| 提交时间：2013/03/25 High-quality ZnO thin films on c-plane sapphire (Al2O 3) substrates were prepared by plasma-molecular beam epitaxy (P-MBE). The influence of growth temperature on growth mode of ZnO was investigated. Real-time monitored by reflection high-energy electron diffraction (RHEED) images show that below 500 C ZnO thin film was grown by three-dimension (3D) growth mode. While the two-dimension (2D) growth mode was obtained above growth temperature of 650 C. Atomic force microscopy (AFM) images present that the surface morphology of ZnO thin film with 2D growth is improved and X-ray rocking curves (XRC) indicate that the full width at half maximum (FWHM) of the ZnO (0 0 2) peak becomes narrow. From the photoluminescence (PL) spectra ultraviolet (UV) emission peak exhibits obvious blue-shift for the samples grown at lower temperature which is attributed to the effect of the quantum confinement arisen from small crystal grain sizes. The minimum carrier concentration of N=7.661016 cm-3 was obtained in the ZnO thin films with the 2D grown which is closed to that of bulk ZnO. 2005 Elsevier B.V. All rights reserved.
	Fabrication of gan epitaxial films on al2o3/si (001) substrates 期刊论文 iSwitch采集 Science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207 作者: Wang, LS; Liu, XG; Zan, YD; Wang, D; Wang, J 收藏 \| 浏览/下载：31/0 \| 提交时间：2019/05/12 Fabrication of gan epitaxial films Al2o3/si(001) substrate Metalorganic chemical deposition Crystal structure and surface morphology Photoluminescence spectrum
	Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates 期刊论文 OAI收割 science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207 Wang LS; Liu XG; Zan YD; Wang D; Wang J; Lu DC; Wang ZG 收藏 \| 浏览/下载：34/0 \| 提交时间：2010/08/12 fabrication of GaN epitaxial films Al2O3/Si(001) substrate metalorganic chemical deposition crystal structure and surface morphology photoluminescence spectrum GROWTH DIODES BUFFER LAYER