中国科学院机构知识库网格系统: 检索

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	Development and Insulation Performance Evaluation of Experimental Sample for a Direct Current High-Voltage Transmission Line 期刊论文 OAI收割 FUSION SCIENCE AND TECHNOLOGY, 2024 作者: Wang, Rixin; Xu, Yongjian; Jiang, Caichao; Liang, Lizhen; Liu, Wei \| 收藏 \| 浏览/下载：9/0 \| 提交时间：2024/11/20 Negative-ion-based neutral beam injector system direct current high-voltage transmission line insulation performance evaluation test bed leakage current
	Correlation between the transient variation in positive/negative pulse voltages and the growth of PEO coating on 7075 aluminum alloy 期刊论文 OAI收割 ELECTROCHIMICA ACTA, 2022, 卷号: 411, 页码: 11 作者: Zhu, Mingyu; Song, Yingwei; Dong, Kaihui; Shan, Dayong; Han, En-Hou \| 收藏 \| 浏览/下载：39/0 \| 提交时间：2022/07/01 Plasma electrolytic oxidation Transient variation Compactness Negative voltage Energy consumption
	Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering 期刊论文 OAI收割 APPLIED SURFACE SCIENCE, 2015, 卷号: 359, 页码: 521-525 Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia 收藏 \| 浏览/下载：19/0 \| 提交时间：2016/04/21 Tungsten oxide thin films Magnetron sputtering Negative bias voltage (V-b) Structure Composition
	Study on nanocrystalline Cr2O3 films deposited by arc ion plating: I. composition, morphology, and microstructure analysis 期刊论文 OAI收割 Surface & Coatings Technology, 2012, 卷号: 206, 期号: 10, 页码: 2629-2637 T. G. Wang; D. Jeong; S. H. Kim; Q. Wang; D. W. Shin; S. Melin; S. Iyengar; K. H. Kim 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/02/05 Cr2O3 film Arc ion plating Bias voltage Grain size Surface morphology HRTEM chromium-oxide coatings pulsed-laser deposition negative bias voltage si-n coatings thin-films mechanical-properties optical-properties nitrogen pressure vapor-deposition residual-stress
	Microstructural control of Cr-Si-N films by a hybrid arc ion plating and magnetron sputtering process 期刊论文 OAI收割 Acta Materialia, 2009, 卷号: 57, 期号: 17, 页码: 4974-4987 Q. M. Wang; K. H. Kim 收藏 \| 浏览/下载：22/0 \| 提交时间：2012/04/13 Cr-Si-N Nanocomposite Physical vapor deposition Nanocrystalline microstructure Transmission electron microscopy nanocomposite thin-films negative bias voltage mechanical-properties coating system cathodic arc deposition silicon growth layer hard
	Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者: Zhang Z.-W. 收藏 \| 浏览/下载：18/0 \| 提交时间：2013/03/25 The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit the luminous uniformity has great improved but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED such as low field effect mobility low output current and threshold voltage shift. In this article a two-a-Si:H TFT pixel circuit was designed which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal the variety of Vth is smallest about 1.28V after a fixed stressing time of 1.33104min which shows the novel data signal timing can improved the driving TFT output-input current stability.
	Effect of the distance between electrodes on the electronic transport properties of single molecular devices 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 3, 页码: 1341 Zou, B; Li, ZL; Wang, CK; Xue, QK 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/09/17 NEGATIVE DIFFERENTIAL RESISTANCE CURRENT-VOLTAGE CHARACTERISTICS DIMENSIONALITY JUNCTIONS
	Study of (Ti,Al)N coatings on SiCp/Al substrate 期刊论文 OAI收割 ACTA METALLURGICA SINICA, 2004, 卷号: 40, 期号: 7, 页码: 745-748 作者: Zheng, JD; Zou, YS; Song, GH; Gong, J; Liu, Y \| 收藏 \| 浏览/下载：15/0 \| 提交时间：2021/02/02 (Ti, Al)N coating SiCp/Al composite arc ion plating negative bias voltage
	The VCNR properties of nano-structured ceria thin films 期刊论文 OAI收割 Solid State Communications, 2002, 卷号: 124, 期号: 5-6, 页码: 171-176 Z. L. Liu; H. M. Yue; Y. Wang; K. L. Yao; Q. Liu 收藏 \| 浏览/下载：16/0 \| 提交时间：2012/04/14 nano-structured ceria thin films differential negative resistance properties sol-gel method current-voltage characteristics electroformed mim structures gel resistances devices