机构

• 新疆生态与地理研究所 [1]
• 长春光学精密机械与物... [1]
• 中国科学院大学 [1]
• 上海硅酸盐研究所 [1]

采集方式

• OAI收割 [3]
• iSwitch采集 [1]

内容类型

• 期刊论文 [3]
• 会议论文 [1]

发表日期

• 2019 [1]
• 2015 [1]
• 2010 [1]
• 2008 [1]

学科主题

筛选

浏览/检索结果: 共4条，第1-4条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序作者升序作者降序 A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches 期刊论文  OAI收割 IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 2, 页码: 271 作者:  Han, Wei-Wei;  Huang, Wei;  Zhuo, Shi-Yi;  Xin, Jun;  Liu, Xue-Chao   |  收藏  |  浏览/下载：88/0  |  提交时间：2019/12/26 Photoconductive switch  silicon carbide  intrinsic photoconductivity  pulse-power system switches  on-state resistance   Application of an al-doped zinc oxide subcontact layer on vanadium-compensated 6h-sic photoconductive switches 期刊论文  iSwitch采集 Chinese physics b, 2015, 卷号: 24, 期号: 4, 页码: 5 作者:  Zhou Tian-Yu;  Liu Xue-Chao;  Huang Wei;  Dai Chong-Chong;  Zheng Yan-Qing 收藏  |  浏览/下载：30/0  |  提交时间：2019/05/10 Photoconductive semiconductor switch  Sic  N(+)-azo subcontact layer  On-state resistance   Total ionizing dose effects and annealing behavior for domestic VDMOS devices 期刊论文  OAI收割 Journal of Semiconductors, 2010, 卷号: 31, 期号: 4 Gao; Yu; Ren; Liu; Wang; Sun; Cui; Bo1; Xuefeng1; Diyuan1; Gang3; Yiyuan1; Jing1; Jiangwei1; 2; 2; 2; 2; 2; 2; 4; 4; 4 收藏  |  浏览/下载：23/0  |  提交时间：2011/08/19 Drain current - Electric breakdown - Experiments - Field effect transistors - Ionizing radiation - Irradiation - Radiation effects - Threshold voltage - Annealing behavior - Annealing time - Bias conditions - Breakdown voltage - Drain bias voltage - Electrical parameter - N-channel - On-state resistance - Preirradiation - Total dose - Total dose effect - Total ionizing dose effects - VDMOS device - VDMOS devices   808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文  OAI收割 Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China 作者:  Wang Y.;  Wang L.;  Wang L. 收藏  |  浏览/下载：31/0  |  提交时间：2013/03/25 808nm high power diode lasers  which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems  have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers  and they could lead to new applications where space  weight and electrical power are critical. High efficiency devices generate less waste heat  which means less strain on the cooling system and more tolerance to thermal conductivity variation  a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s  1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars  we fabricate a 1 3 arrays  the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A  the slope efficiency is 3.37 W/A. 2008 SPIE.