机构

• 金属研究所 [2]
• 长春光学精密机械与物... [2]
• 物理研究所 [1]
• 半导体研究所 [1]
• 合肥物质科学研究院 [1]

采集方式

• OAI收割 [7]

内容类型

• 期刊论文 [6]
• 会议论文 [1]

发表日期

• 2019 [3]
• 2018 [1]
• 2011 [1]
• 2006 [1]
• 1998 [1]

学科主题

• 半导体材料 [1]

筛选

浏览/检索结果: 共7条，第1-7条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 793, 页码: 295-301 作者:  Qi, Lin;  Chai, Zhaoyuan;  Yang, Huazhe;  Shahzad, M. Babar;  Qi, Yang   |  收藏  |  浏览/下载：23/0  |  提交时间：2021/02/02 Non-polar preferred orientation  Sb-doped ZnO film  Homojunction  P-type conduction  Acceptor-type defects   A facile and reproducible synthesis of non-polar ZnO homojunction with enlarged rectification rate and colorful light emission 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 793, 页码: 295-301 作者:  Qi, Lin;  Chai, Zhaoyuan;  Yang, Huazhe;  Shahzad, M. Babar;  Qi, Yang   |  收藏  |  浏览/下载：23/0  |  提交时间：2021/02/02 Non-polar preferred orientation  Sb-doped ZnO film  Homojunction  P-type conduction  Acceptor-type defects   A novel ammonia gas sensors based on p-type delafossite AgAlO2 期刊论文  OAI收割 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 777, 期号: 无, 页码: 52-58 作者:  Deng, Zanhong;  Meng, Gang;  Fang, Xiaodong;  Dong, Weiwei;  Shao, Jingzhen   |  收藏  |  浏览/下载：28/0  |  提交时间：2020/03/31 AgAlO2 nanoparticles  p-type conduction  Ammonia gas sensing  Pseudo n-type sensing response   AlGaN photonics_recent advances in materials and ultraviolet devices 期刊论文  OAI收割 Advances in Optics and Photonics, 2018, 卷号: 10, 期号: 1, 页码: 43-110 作者:  Li, D. B.;  Jiang, K.;  Sun, X. J.;  Guo, C. L.   |  收藏  |  浏览/下载：21/0  |  提交时间：2019/09/17 light-emitting-diodes  high-quality aln  temperature  stimulated-emission  2nd-order optical-response  atomic-layer epitaxy  vapor-phase epitaxy  z-scan measurement  p-type conduction  room-temperature  avalanche photodiodes  Optics   Control of N/N2 species ratio in NO plasma for p-type doping of ZnO (EI CONFERENCE) 会议论文  OAI收割 作者:  Chen X.;  Liu L.;  Liu L.;  Li B.;  Li B. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 Nitrogen-doped ZnO thin films were grown on c-plane sapphire (Al 2O3) substrates via plasma-assisted molecular beam epitaxy using plasma activated nitric oxide (NO) as the oxygen source and dopant. X-ray diffraction measurements indicate that a small NO flux benefits the crystal quality of the thin films. Hall effect measurements indicate that the electron density of the ZnO films decreases gradually with decreasing NO flux  and the conduction reverses to p-type at a certain flux. Optical emission spectra indicate that the N atom content in the NO plasma increases with decreasing NO flux  and the origin of this is discussed. X-ray photoelectron spectroscopy measurements demonstrate that the number of N atom occupied O sites in the ZnO lattice increases correspondingly. 2011 American Institute of Physics.   Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films 期刊论文  OAI收割 applied physics letters, 2006, 卷号: 88, 期号: 6, 页码: art.no.602110 作者:  Han XX;  Wei HY 收藏  |  浏览/下载：718/6  |  提交时间：2010/04/11 P-TYPE CONDUCTION  THIN-FILMS  OHMIC CONTACTS   Mechanism of donor-acceptor pair recombination in Mg-doped GaN epilayers grown on sapphire substrates 期刊论文  OAI收割 JOURNAL OF APPLIED PHYSICS, 1998, 卷号: 84, 期号: 4, 页码: 2082 Kang, TW; Park, SH; Song, H; Kim, TW; Yoon, GS; Kim, CO 收藏  |  浏览/下载：19/0  |  提交时间：2013/09/18 MOLECULAR-BEAM EPITAXY  VAPOR-PHASE EPITAXY  P-TYPE CONDUCTION  DEEP-LEVEL  ENERGY  FILMS