中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共5条，第1-5条

帮助

条数/页：排序方式：
	Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition 期刊论文 OAI收割 CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4 Chen, Y; Jiang, Y; Xu, PQ; Ma, ZG; Wang, XL; Wang, L; Jia, HQ; Chen, H 收藏 \| 浏览/下载：36/0 \| 提交时间：2013/09/24 PHONON DEFORMATION POTENTIALS OPTICAL-PROPERTIES RAMAN-SCATTERING GALLIUM NITRIDE BUFFER LAYERS STRAIN ALN FILMS HETEROSTRUCTURES PHOTOLUMINESCENCE
	Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文 OAI收割 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467 作者: Pan X 收藏 \| 浏览/下载：95/5 \| 提交时间：2011/07/05 Sandwich structure Stress Aluminum nitride Gallium nitride Silicon PHONON DEFORMATION POTENTIALS WURTZITE ALN SILICON STRESS TRANSISTORS EPITAXY LAYERS
	Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction 期刊论文 OAI收割 SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 卷号: 53, 期号: 3, 页码: 465 Zhang, YC; Xing, ZG; Ma, ZG; Chen, Y; Ding, GJ; Xu, PQ; Dong, CM; Chen, H; Le, XY 收藏 \| 浏览/下载：37/0 \| 提交时间：2013/09/23 LIGHT-EMITTING-DIODES PHONON DEFORMATION POTENTIALS FILMS EPITAXY ALN
	Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 11, 页码: 5450 Qin, Q; Yu, NS; Guo, LW; Wang, Y; Zhu, XL; Chen, H; Zhou, JM 收藏 \| 浏览/下载：34/0 \| 提交时间：2013/09/24 PHONON DEFORMATION POTENTIALS LIGHT-EMITTING-DIODES OPTICAL-PROPERTIES PLANE SAPPHIRE OVERGROWN GAN ALPHA-GAN LAYERS SUBSTRATE ALN
	Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文 OAI收割 applied physics letters, 2003, 卷号: 83, 期号: 4, 页码: 677-679 作者: Zhao DG 收藏 \| 浏览/下载：1054/2 \| 提交时间：2010/08/12 VAPOR-PHASE EPITAXY PHONON DEFORMATION POTENTIALS MOLECULAR-BEAM EPITAXY RAMAN-SCATTERING ALPHA-GAN ALN LAYERS STRAIN WURTZITE FILMS