机构

• 物理研究所 [3]
• 半导体研究所 [2]

采集方式

• OAI收割 [5]

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浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择提交时间升序提交时间降序题名升序题名降序发表日期升序发表日期降序作者升序作者降序 Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition 期刊论文  OAI收割 CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 4 Chen, Y; Jiang, Y; Xu, PQ; Ma, ZG; Wang, XL; Wang, L; Jia, HQ; Chen, H 收藏  |   Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文  OAI收割 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467 作者:  Pan X 收藏  |   Threading dislocation density comparison between GaN grown on the patterned and conventional sapphire substrate by high resolution X-ray diffraction 期刊论文  OAI收割 SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2010, 卷号: 53, 期号: 3, 页码: 465 Zhang, YC; Xing, ZG; Ma, ZG; Chen, Y; Ding, GJ; Xu, PQ; Dong, CM; Chen, H; Le, XY 收藏  |   Residual stress in the GaN epitaxial film prepared by in situ SiNx deposition 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 11, 页码: 5450 Qin, Q; Yu, NS; Guo, LW; Wang, Y; Zhu, XL; Chen, H; Zhou, JM 收藏  |   Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire 期刊论文  OAI收割 applied physics letters, 2003, 卷号: 83, 期号: 4, 页码: 677-679 作者:  Zhao DG 收藏  |