机构

• 上海微系统与信息技术... [4]
• 新疆理化技术研究所 [2]

采集方式

• OAI收割 [6]

内容类型

• 期刊论文 [6]

发表日期

• 2020 [1]
• 2015 [1]
• 2012 [4]

学科主题

• Engineerin... [2]
• Instrument... [1]
• Physics [1]

筛选

浏览/检索结果: 共6条，第1-6条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs 期刊论文  OAI收割 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558 作者:  Xi, SX (Xi, Shan-Xue)[ 1,2,3 ];  Zheng, QW (Zheng, Qi-Wen)[ 1,2 ];  Lu, W (Lu, Wu)[ 1,2 ];  Cui, JW (Cui, Jiang-Wei)[ 1,2 ];  Wei, Y (Wei, Ying)[ 1,2 ]   |  收藏  |  浏览/下载：25/0  |  提交时间：2020/07/06 Total ionizing dose  h-shape gate  channel width  partially depleted   Radiation effects on the low frequency noise in partially depleted silicon on insulator transistors 期刊论文  OAI收割 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 7 作者:  Liu, Y (Liu Yuan);  Chen, HB (Chen Hai-Bo);  He, YJ (He Yu-Juan);  Wang, X (Wang Xin);  Yue, L (Yue Long)   |  收藏  |  浏览/下载：25/0  |  提交时间：2018/01/26 SilicOn On Insulator  Partially Depleted  Ionizing Radiation  Low Frequency Noise   Extra source implantation for suppression floating-body effect in partially depleted SOI MOSFETs 期刊论文  OAI收割 NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 卷号: 272, 页码: 128-131 Chen, J; Luo, JX; Wu, QQ; Chai, Z; Huang, XL; Wei, X; Wang, X 收藏  |  浏览/下载：24/0  |  提交时间：2013/04/17 Partially depleted SOI  Floating-body effect  The kink effect  Esaki tunnel  Junction  Body contact   A Tunnel Diode Body Contact Structure for High-Performance SOI MOSFETs 期刊论文  OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 卷号: 59, 期号: 1, 页码: 101-107 Luo, JX; Chen, J; Wu, QQ; Chai, Z; Zhou, JH; Yu, T; Dong, YJ; Li, L; Liu, W; Qiu, C; Wang, X 收藏  |  浏览/下载：14/0  |  提交时间：2013/04/17 Body contact  floating-body effects (FBEs)  kink effect  linear kink effect (LKE)  partially depleted (PD) silicon-on-insulator (SOI)  SOI MOSFETs  tunnel diode  tunnel diode body contact (TDBC)   Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs 期刊论文  OAI收割 CHINESE PHYSICS B, 2012, 卷号: 21, 期号: 5, 页码: 56602 Luo, JX; Chen, J; Zhou, JH; Wu, QQ; Chai, Z; Yu, T; Wang, X 收藏  |  浏览/下载：22/0  |  提交时间：2013/04/17 floating body effect  hysteresis effect  back gate bias  partially depleted (PD) SOI   Temperature Dependence of Hysteresis Effect in Partially Depleted Silicon-on-Insulator MOSFETs 期刊论文  OAI收割 IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2012, 卷号: 12, 期号: 1, 页码: 63-67 Luo, JX; Chen, J; Zhou, JH; Wu, QQ; Chai, Z; Wang, X 收藏  |  浏览/下载：18/0  |  提交时间：2013/04/17 Hysteresis  MOSFET  partially depleted (PD) silicon-on-insulator (SOI)  SOI technology  temperature