中国科学院机构知识库网格系统: 检索

Study of the optimal duty cycle and pumping rate for square-wave amplitude-modulated Bell-Bloom magnetometers 期刊论文 OAI收割
CHINESE PHYSICS B, 2016, 卷号: 25, 页码: 6
作者: Wang, Mei-Ling; Wang, Meng-Bing; Zhang, Gui-Ying; Zhao, Kai-Feng

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收藏 | 浏览/下载：12/0 | 提交时间：2018/05/31

optical pumping spin relaxation power-broadening magnetometry

Counter-Rotating Type Pump-Turbine Unit Cooperating with Wind Power Unit 期刊论文 OAI收割
JOURNAL OF THERMAL SCIENCE, 2013, 卷号: 22, 期号: 1, 页码: 7,12
Tengen Murakami; Toshiaki Kanemoto

收藏 | 浏览/下载：25/0 | 提交时间：2013/04/27

pump-turbine pumping mode turbine mode power supply counter-rotation

a low power adaptive clock and data recovery circuit for wireless implantable systems 期刊论文 OAI收割
Shenzhen Daxue Xuebao (Ligong Ban)/Journal of Shenzhen University Science and Engineering, 2011, 卷号: 28, 期号: 2, 页码: 143-146
Yu Hang; Li Yan; Jiang Lai; Ji Zhen; Yan Ping-Kun; Wang Fei

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收藏 | 浏览/下载：15/0 | 提交时间：2013/10/08

Charge pump circuits Clocks CMOS integrated circuits Design Electric power supplies to apparatus Input output programs Integrated circuits Jitter Metallic compounds MOS devices Optical pumping Packet switching Pulse modulation Pulse position modulation Pumps Transistors

High power885 nm laser diodes with graded optical expand structures for small divergence angle 期刊论文 OAI收割
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 12, 页码: 2382-2387
Wang, Jun; Bai, Yiming; Liu, Yuanyuan; He, Weili; Xiong, Cong; Wang, Cuiluan; Feng, Xiaoming; Zhong, Li; Liu, Suping; Ma, Xiaoyu

收藏 | 浏览/下载：31/0 | 提交时间：2012/06/14

Energy efficiency Epitaxial growth High power lasers Optimization Pumping(laser) Quantum well lasers Semiconductor quantum wells

Study of high-power broad area distributed-feedback laser 期刊论文 OAI收割
zhongguo jiguang/chinese journal of lasers, 2011, 卷号: 38, 期号: 8, 页码: 802005
Zhao, Yihao; Wang, Jun; Wang, Cuiluan; Liu, Suping; Ma, Xiaoyu

收藏 | 浏览/下载：13/0 | 提交时间：2012/06/14

Distributed feedback lasers Fiber lasers Power electronics Pumping(laser) Wavelength

Experiments of second harmonic generation output in pulsed TEA CO 2 laser (EI CONFERENCE) 会议论文 OAI收割
High-Power Lasers and Applications V, October 18, 2010 - October 19, 2010, Beijing, China
作者: Li D.

收藏 | 浏览/下载：52/0 | 提交时间：2013/03/25

It is always the hot subject to realize the output of high-power laser in the range of 3-5m wavelength. This rang of wave band has greatly important applications in military because it located in the atmosphere window. Generally there are two ways to obtain this range of laser wavelength. One way is through optical parameter oscillation (OPO) from shorter laser wavelength and the other is through second harmonic generation (SHG) from longer laser wavelength. Firstly the comparison between tow nonlinear crystals ZnGeP2 and AgGaSe2 is conducted for their nonlinear coefficient and damaging threshold in theory. The theoretical results show that the crystal AgGaSe 2 is more suitable for the SHG of pulsed TEA CO2 laser. When using pulsed TEA CO2 laser with wavelength of 9.3m to pumping AgGaSe2 SHG crystal the wavelength of 4.65m is obtained. In the condition of repetition rate 100Hz the upmost output power of single pulse is up to level of 1W which corresponding efficiency of SHG is about 6%. The experimental results show that the polarization of laser beam has greatly influence on the SHG output of the crystal. Under the radiation of 3MW/cm 2 from fundamental wave and the right position for maximal SHG output in the crystal when polarization of laser beam rotates 4.5 the SHG output of energy decrease about 30%. The research of this paper will make a foundation for further development of mid-infrared laser. 2010 Copyright SPIE - The International Society for Optical Engineering.

Experimental study of characteristics of high power photonic crystal fiber amplifier 期刊论文 OAI收割
acta physica sinica, 2008, 卷号: 57, 期号: 10, 页码: 6335-6339
作者: Zhao Zhen-Yu; Duan Kai-Liang; Wang Han-Ming; Zhao Wei; Wang Yi-Shan

收藏 | 浏览/下载：26/0 | 提交时间：2011/09/30

photonic crystal fiber fiber amplifier reverse pumping high power

808nm high-power high-efficiency GaAsP/GaInP laser bars (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者: Wang Y.; Wang L.; Wang L.; Wang L.; Liu Y.

收藏 | 浏览/下载：22/0 | 提交时间：2013/03/25

808nm high power diode lasers which is rapidly maturing technology technically and commercially since the introduction in 1999 of complete kilowatt-scale diode laser systems have important applications in the fields of industry and pumping solid-state lasers (DPSSL). High power and high power conversion efficiency are extremely important in diode lasers and they could lead to new applications where space weight and electrical power are critical. High efficiency devices generate less waste heat which means less strain on the cooling system and more tolerance to thermal conductivity variation a lower junction temperature and longer lifetimes. Diode lasers with Al-free materials have superior power conversion efficiency compared with conventional AlGaAs/GaAs devices because of their lower differential series resistance and higher thermal conductivity. 808nm GaAsP/GalnP broad-waveguide emitting diode laser bars with 1mm cavity length have been fabricated. The peak power can reach to 100.9W at 106.5A at quasicontinuous wave operation (200s 1000Hz). The maximum power conversion efficiency is 57.38%. Based on these high power laser bars we fabricate a 1 3 arrays the maximum power is 64.3 W in continuous wave mode when the current is 25.0A. And the threshold current is 5.9A the slope efficiency is 3.37 W/A. 2008 SPIE.

Er3+离子浓度对Er3+/Yb3+共掺磷酸盐玻璃上转换发光的影响 期刊论文 OAI收割
光子学报, 2008, 卷号: 37, 期号: s1, 页码: 131, 134
冯素雅; 栾飞; 温磊; 李顺光; 王标; 胡丽丽; 陈伟

收藏 | 浏览/下载：1097/249 | 提交时间：2009/09/24

Emission wavelengths Er³⁺/Yb³⁺ codoped phosphate glass Excitation spectrum Pumping power Red lights Three-photon excitations Three-photon proces Up-conversion emissions Upconversion

The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者: Li J.; Wang L.-J.; Wang L.-J.; Ning Y.-Q.; Li J.

收藏 | 浏览/下载：23/0 | 提交时间：2013/03/25

The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs This three QWs structure can add the quantum state of QW increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.