中国科学院机构知识库网格
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浏览/检索结果: 共6条,第1-6条 帮助

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Static and Dynamic Characteristics of In(AsSb)/GaAs Submonolayer Lasers 期刊论文  OAI收割
Ieee Journal of Quantum Electronics, 2019, 卷号: 55, 期号: 3, 页码: 7
作者:  
D.Quandt;  D.Arsenijevic;  A.Strittmatte;  D.H.Bimberg
  |  收藏  |  浏览/下载:54/0  |  提交时间:2020/08/24
1.3-mu m in(ga)as quantum-dot vcsels fabricated by dielectric-free approach with surface-relief process 期刊论文  iSwitch采集
Ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93
作者:  
Xu, D. W.;  Yoon, S. F.;  Ding, Y.;  Tong, C. Z.;  Fan, W. J.
收藏  |  浏览/下载:29/0  |  提交时间:2019/05/12
1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process 期刊论文  OAI收割
ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93
Xu DW; Yoon SF; Ding Y; Tong CZ; Fan WJ; Zhao LJ
收藏  |  浏览/下载:121/2  |  提交时间:2011/07/05
High-temperature continuous-wave single-mode operation of 1.3 mu m p-doped inas-gaas quantum-dot vcsels 期刊论文  iSwitch采集
Ieee photonics technology letters, 2009, 卷号: 21, 期号: 17, 页码: 1211-1213
作者:  
Xu, D. W.;  Yoon, S. F.;  Tong, C. Z.;  Zhao, L. J.;  Ding, Y.
收藏  |  浏览/下载:32/0  |  提交时间:2019/05/12
High-Temperature Continuous-Wave Single-Mode Operation of 1.3 mu m p-Doped InAs-GaAs Quantum-Dot VCSELs 期刊论文  OAI收割
ieee photonics technology letters, 2009, 卷号: 21, 期号: 17, 页码: 1211-1213
Xu DW; Yoon SF; Tong CZ; Zhao LJ; Ding Y; Fan WJ
收藏  |  浏览/下载:123/2  |  提交时间:2010/03/08
Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers 期刊论文  iSwitch采集
Physica e-low-dimensional systems & nanostructures, 2007, 卷号: 39, 期号: 2, 页码: 203-208
作者:  
Shi, L. W.;  Chen, Y. H.;  Xu, B.;  Wang, Z. C.;  Wang, Z. G.
收藏  |  浏览/下载:17/0  |  提交时间:2019/05/12