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	Measuring the system gain of the TDI CCD remote sensing camera (EI CONFERENCE) 会议论文 OAI收割 Advanced Materials and Devices for Sensing and Imaging II, November 8, 2004 - November 10, 2004, Beijing, China Ya-xia L.; Hai-ming B.; Jie L.; Jin R.; Zhi-hang H. 收藏 \| 浏览/下载：70/0 \| 提交时间：2013/03/25 The gain of a TDI CCD camera is the conversion between the number of electrons recorded by the TDI CCD and the number of digital units (counts) contained in the CCD image"[1]. TDI CCD camera has been a main technical approach for meeting the requirements of high-resolution and lightweight of remote sensing equipment. It is useful to know this conversion for evaluating the performance of the TDI CCD camera. In general a lower gain is better. However the resulting slope is the gain of the TDI CCD. We did the experiments using the Integration Sphere in order to get a flat field effects. We calculated the gain of the four IT-EI-2048 TDI CCD. The results and figures of the four TDI CCD are given. this is only true as long as the total well depth (number of electrons that a pixel can hold) of the pixels can be represented. High gains result in higher digitization noise. System gains are designed to be a compromise between the extremes of high digitization noise and loss of well depth. In this paper the mathematical theory is given behind the gain calculation on a TDI CCD camera and shows how the mathematics suggests ways to measure the gain accurately according to the Axiom Tech. The gains were computed using the mean-variance method also known as the method of photon transfer curves. This method uses the effect of quantization on the variance in the measured counts over a uniformly illuminated patch of the detector. This derivation uses the concepts of signal and noise. A linear fit is done of variance vs. mean
	Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode 期刊论文 OAI收割 ELECTROCHEMISTRY COMMUNICATIONS, 2000, 卷号: 2, 期号: 6, 页码: 404-406 作者: Liu, Y; Xiao, XR; Zeng, YP \| 收藏 \| 浏览/下载：25/0 \| 提交时间：2019/04/09 Multiple Quantum Well Electrode Quantization Effect Exciton Transition Photocurrent Spectrum Photoelectrochemical Cell
	Photoelectrochemical behavior of a novel composite in0.15ga0.85as/gaas vertical bar gaas/al0.3ga0.7as multiple quantum well electrode 期刊论文 iSwitch采集 Electrochemistry communications, 2000, 卷号: 2, 期号: 6, 页码: 404-406 作者: Liu, Y; Xiao, XR; Zeng, YP 收藏 \| 浏览/下载：29/0 \| 提交时间：2019/05/12 Multiple quantum well electrode Quantization effect Exciton transition Photocurrent spectrum Photoelectrochemical cell
	Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode 期刊论文 OAI收割 electrochemistry communications, 2000, 卷号: 2, 期号: 6, 页码: 404-406 Liu Y; Xiao XR; Zeng YP 收藏 \| 浏览/下载：51/0 \| 提交时间：2010/08/12 multiple quantum well electrode quantization effect exciton transition photocurrent spectrum photoelectrochemical cell SOLAR-CELLS PHOTOCURRENT SPECTROSCOPY SUPERLATTICE ELECTRODES EFFICIENCY PHOTOLUMINESCENCE HETEROSTRUCTURE
	Size quantization effects in inas self-assembled islands on inp(001) at the onset of 2d-to-3d transition 期刊论文 iSwitch采集 Journal of crystal growth, 1999, 卷号: 197, 期号: 4, 页码: 789-793 作者: Liu, FQ; Wang, ZG; Wu, J; Xu, B; Zhou, W 收藏 \| 浏览/下载：18/0 \| 提交时间：2019/05/12 Self-assembled island Size quantization effect Molecular beam epitaxy
	Size quantization effects in InAs self-assembled islands on InP(001) at the onset of 2D-to-3D transition 期刊论文 OAI收割 journal of crystal growth, 1999, 卷号: 197, 期号: 4, 页码: 789-793 作者: Xu B 收藏 \| 浏览/下载：54/0 \| 提交时间：2010/08/12 self-assembled island size quantization effect molecular beam epitaxy EXCITED-STATES GROWTH PHOTOLUMINESCENCE QUANTUM DOTS
	Chemical effects of size quantization of CdS nanoparticles 期刊论文 OAI收割 SCIENCE IN CHINA SERIES B-CHEMISTRY, 1996, 卷号: 39, 期号: 6, 页码: 645-653 作者: Chen, DW; Wang, SH \| 收藏 \| 浏览/下载：33/0 \| 提交时间：2019/04/09 Nanoparticles Cadmium Sulfide Size Quantization Effect Esr Photoreaction