中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
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CAS IR Grid
机构
近代物理研究所 [6]
高能物理研究所 [1]
采集方式
OAI收割 [7]
内容类型
会议论文 [4]
期刊论文 [3]
发表日期
2007 [3]
2004 [3]
1992 [1]
学科主题
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Damage accumulation in gallium nitride irradiated with various energetic heavy ions
会议论文
OAI收割
作者:
Zhang, C. H.
;
Song, Y.
;
Sun, Y. M.
;
Chen, H.
;
Yang, Y. T.
  |  
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2018/08/20
GaN
swift heavv ions
slow highly-charged ions
RBS-channeling
Raman scattering
TEM
Damage accumulation in gallium nitride irradiated with various energetic heavy ions
会议论文
OAI收割
作者:
Zhang, C. H.
;
Song, Y.
;
Sun, Y. M.
;
Chen, H.
;
Yang, Y. T.
  |  
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2018/08/20
GaN
swift heavv ions
slow highly-charged ions
RBS-channeling
Raman scattering
TEM
Damage accumulation in gallium nitride irradiated with various energetic heavy ions
期刊论文
OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 卷号: 256, 期号: 1, 页码: 199-206
作者:
Zhang, C. H.
;
Song, Y.
;
Sun, Y. M.
;
Chen, H.
;
Yang, Y. T.
  |  
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/10/29
GaN
swift heavv ions
slow highly-charged ions
RBS-channeling
Raman scattering
TEM
A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC
期刊论文
OAI收割
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 卷号: 218, 页码: 53-60
作者:
Sun, YM
;
Zhang, CH
;
Donnelly, SE
;
Vishnyakov, VM
;
Evans, JH
  |  
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2010/10/29
bubbles
helium
4H-SiC
TEM
RBS-channeling
modeling
A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC
会议论文
OAI收割
作者:
Sun, YM
;
Zhang, CH
;
Donnelly, SE
;
Vishnyakov, VM
;
Evans, JH
  |  
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2018/08/20
bubbles
helium
4H-SiC
TEM
RBS-channeling
modeling
Application of Combined α-RBS and PIXE Analysis Technology
期刊论文
OAI收割
Rare Metals, 1992, 期号: 2, 页码: 98-101
作者:
Xia CH(夏琮璜)
;
Shen DY(沈定予)
;
Li SZ(李硕中)
;
Liu SJ(刘士杰)
;
Wang J(王江)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2015/12/25
RBS
PIXE
Channeling mode
Ion Implantation
GaAs