机构

• 半导体研究所 [15]
• 金属研究所 [8]
• 中国科学院大学 [3]
• 长春光学精密机械与物... [2]
• 物理研究所 [1]

采集方式

• OAI收割 [17]
• iSwitch采集 [12]

内容类型

• 期刊论文 [26]
• 会议论文 [3]

发表日期

• 2011 [7]
• 2010 [6]
• 2009 [3]
• 2008 [1]
• 2007 [1]
• 2005 [4]
• 更多

学科主题

• 半导体材料 [5]
• 光电子学 [1]

筛选

浏览/检索结果: 共29条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 Vi/ii ratio-dependent growth and photoluminescence of cubic cdse epilayers by molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 2011, 卷号: 329, 期号: 1, 页码: 1-5 作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie 收藏  |  浏览/下载：36/0  |  提交时间：2019/05/12 Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting ii-vi materials   Growth and annealing of zinc-blende cdse thin films on gaas (001) by molecular beam epitaxy 期刊论文  iSwitch采集 Applied surface science, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043 作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie 收藏  |  浏览/下载：34/0  |  提交时间：2019/05/12 Cdse  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy   VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5 作者:  Zhao, Jie;  Zeng, Yiping;  Yang, Qiumin;  Li, Yiyang;  Cui, Lijie   |  收藏  |  浏览/下载：17/0  |  提交时间：2021/02/02 Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials   VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 329, 期号: 1, 页码: 1-5 作者:  Zhao, Jie;  Zeng, Yiping   |  收藏  |  浏览/下载：16/0  |  提交时间：2021/02/02 Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy  Molecular beam epitaxy  Cadmium compounds  Semiconducting II-VI materials   Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043 作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie   |  收藏  |  浏览/下载：15/0  |  提交时间：2021/02/02 CdSe  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy   Growth and annealing of zinc-blende CdSe thin films on GaAs (001) by molecular beam epitaxy 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2011, 卷号: 257, 期号: 21, 页码: 9038-9043 作者:  Yang, Qiumin;  Zhao, Jie;  Guan, Min;  Liu, Chao;  Cui, Lijie   |  收藏  |  浏览/下载：20/0  |  提交时间：2021/02/02 CdSe  Molecular beam epitaxy  Reflection high energy electron diffraction  X-ray diffraction  Atomic force microscopy   Structures and optical characteristics of InGaN quantum dots grown by MBE 期刊论文  OAI收割 xiyou jinshu cailiao yu gongcheng/rare metal materials and engineering, 2011, 卷号: 40, 期号: 11, 页码: 2030-2032 Wang, Baozhu; Yan, Cuiying; Wang, Xiaoliang 收藏  |  浏览/下载：27/0  |  提交时间：2012/06/14 Atomic force microscopy  Gallium nitride  Molecular beam epitaxy  Optical materials  Optical properties  Reflection high energy electron diffraction  Sapphire   Optimization of vi/ii pressure ratio in znte growth on gaas(001) by molecular beam epitaxy 期刊论文  iSwitch采集 Applied surface science, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886 作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Cui, Lijie;  Li, Yanbo 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Znte  Molecular beam epitaxy  Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy   Optimization of VI/II pressure ratio in ZnTe growth on GaAs(001) by molecular beam epitaxy 期刊论文  OAI收割 APPLIED SURFACE SCIENCE, 2010, 卷号: 256, 期号: 22, 页码: 6881-6886 作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Cui, Lijie;  Li, Yanbo   |  收藏  |  浏览/下载：26/0  |  提交时间：2021/02/02 ZnTe  Molecular beam epitaxy  Reflection high-energy electron diffraction  X-ray diffraction  Atomic force microscopy   Substrate temperature dependence of znte epilayers grown on gaas(001) by molecular beam epitaxy 期刊论文  iSwitch采集 Journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495 作者:  Zhao, Jie;  Zeng, Yiping;  Liu, Chao;  Li, Yanbo 收藏  |  浏览/下载：23/0  |  提交时间：2019/05/12 Reflection high-energy electron diffraction  Atomic force microscopy  Molecular beam epitaxy  Zinc compounds  Semiconducting ii-vi materials