中国科学院机构知识库网格系统: 检索

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	High-resolution electron microscopy of misfit dislocations in AlSb/GaAs (001) system 期刊论文 OAI收割 ACTA PHYSICA SINICA, 2010, 卷号: 59, 期号: 3, 页码: 1928 Wen, C; Li, FH; Zou, J; Chen, H 收藏 \| 浏览/下载：35/0 \| 提交时间：2013/09/17 IMAGE DECONVOLUTION SIGE/SI HETEROSTRUCTURES LOMER DISLOCATION CORE STRUCTURE INTERFACE CONFIGURATION DISSOCIATION CRYSTALS LATTICE GROWTH
	Relaxed GexSi1-x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition 期刊论文 OAI收割 applied physics a-materials science & processing, 2000, 卷号: 70, 期号: 4, 页码: 449-451 Luo GL; Chen PY; Lin XF; Tsien P; Fan TW 收藏 \| 浏览/下载：65/0 \| 提交时间：2010/08/12 MOLECULAR-BEAM EPITAXY HIGH-ELECTRON-MOBILITY BUFFER LAYER SI/SIGE HETEROSTRUCTURES SI TEMPERATURE SILANE FILMS
	Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers 期刊论文 OAI收割 APPLIED PHYSICS LETTERS, 1998, 卷号: 72, 期号: 24, 页码: 3160 Peng, CS; Zhao, ZY; Chen, H; Li, JH; Li, YK; Guo, LW; Dai, DY; Huang, Q; Zhou, JM; Zhang, YH; Sheng, TT; Tung, CH 收藏 \| 浏览/下载：19/0 \| 提交时间：2013/09/24 MOLECULAR-BEAM EPITAXY SI/SIGE HETEROSTRUCTURES SURFACE-MORPHOLOGY STRAIN RELAXATION FILMS
	Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density 期刊论文 OAI收割 APPLIED PHYSICS LETTERS, 1997, 卷号: 71, 期号: 21, 页码: 3132 Li, JH; Peng, CS; Wu, Y; Dai, DY; Zhou, JM; Mai, ZH 收藏 \| 浏览/下载：14/0 \| 提交时间：2013/09/24 MOLECULAR-BEAM EPITAXY SI/SIGE HETEROSTRUCTURES MOBILITY FILMS
	Strain relaxation in high electron mobility Si1-xGex/Si structures 期刊论文 OAI收割 JOURNAL OF APPLIED PHYSICS, 1997, 卷号: 82, 期号: 6, 页码: 2881 Li, JH; Holy, V; Bauer, F; Schaffler, F 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/09/24 SIGE THIN-FILMS MISFIT DISLOCATIONS SI/SIGE HETEROSTRUCTURES EPITAXIAL LAYERS NUCLEATION SCATTERING EVOLUTION PATTERN