中国科学院机构知识库网格系统: 检索

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	Epitaxial growth of Ge1-xSnx films with x up to 0.14 grown on Ge (00l) at low temperature 期刊论文 OAI收割 CHINESE PHYSICS B, 2014, 卷号: 23, 期号: 8, 页码: 88112 作者: Tao, P; Huang, L; Cheng, HH; Wang, HH; Wu, XS;王焕华收藏 \|
	Quantitative Model of Heterogeneous Nucleation and Growth of SiGe Quantum Dot Molecules 期刊论文 OAI收割 PHYSICAL REVIEW LETTERS, 2012, 卷号: 109, 期号: 10 Hu, H; Gao, HJ; Liu, F 收藏 \|
	Unified phase-field model for epitaxial growth of multi-scale three-dimensional islands on insulating surfaces 期刊论文 OAI收割 PHYSICA B-CONDENSED MATTER, 2009, 卷号: 404, 期号: 21, 页码: 4303 Xu, YC; Liu, BG 收藏 \|
	Thermal annealing effects on the structure and electrical properties of Al2O3 gate dielectrics on fully depleted SiGe on insulator 期刊论文 OAI收割 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 卷号: 24, 期号: 3, 页码: 1151-1155 Di, ZF; Zhang, M; Liu, WL; Shen, QW; Luo, SH; Song, ZT; Lin, CL; Chu, PK 收藏 \|
	Dislocation filtering techniques for MBE large mismatched heteroepitaxy 期刊论文 OAI收割 PHYSICS AND APPLICATIONS OF SEMICONDUCTOR QUANTUM STRUCTURES, 2001, 页码: 88 Zhou, JM; Huang, Q; Chen, H; Peng, CS 收藏 \|
	Evolution of island-pit surface morphologies of InAs epilayers grown on GaAs (001) substrates 期刊论文 OAI收割 JOURNAL OF APPLIED PHYSICS, 2001, 卷号: 89, 期号: 7, 页码: 3700 Li, JH; Moss, SC; Han, BS; Mai, ZH 收藏 \|
	Confinement and electron-phonon interactions of the E-1 exciton in self-organized Ge quantum dots 期刊论文 OAI收割 PHYSICAL REVIEW B, 1999, 卷号: 59, 期号: 7, 页码: 4980 Kwok, SH; Yu, PY; Tung, CH; Zhang, YH; Li, MF; Peng, CS; Zhou, JM 收藏 \|
	Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices 期刊论文 OAI收割 journal of crystal growth, 1997, 卷号: 181, 期号: 3, 页码: 297-300 Pan D; Zeng YP; Wu J; Kong MY 收藏 \|