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• 半导体研究所 [5]
• 金属研究所 [4]
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• Physics [2]
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浏览/检索结果: 共32条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A Machine Learning Approach for Optimization of Channel Geometry and Source/Drain Doping Profile of Stacked Nanosheet Transistors 期刊论文  OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 页码: 7 作者:  Xu, Haoqing;  Gan, Weizhuo;  Cao, Lei;  Yang, Cheng;  Wu, Jiahao   |  收藏  |  浏览/下载：51/0  |  提交时间：2022/12/07 Performance evaluation  Doping  Optimization  Geometry  Semiconductor process modeling  Training  Logic gates  Machine learning  multi-objective optimization (MOO)  nanosheet  technology computer-aided design (TCAD) simulation   Seamlessly Splicing Metallic SnxMo1-xS2 at MoS2 Edge for Enhanced Photoelectrocatalytic Performance in Microreactor 期刊论文  OAI收割 ADVANCED SCIENCE, 2020, 卷号: 7, 期号: 24, 页码: 8 作者:  Shao, Gonglei;  Lu, Yizhen;  Hong, Jinhua;  Xue, Xiong-Xiong;  Huang, Jinqiang   |  收藏  |  浏览/下载：69/0  |  提交时间：2021/02/02 chemical vapor deposition  covalent bonds  heteroatom doping  metal–  semiconductor heterostructures  photoelectrocatalytic performance   Dopant-Dependent Increase in Seebeck Coefficient and Electrical Conductivity in Blended Polymers with Offset Carrier Energies 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2019, 卷号: 5, 期号: 11 作者:  Li, Hui;  Plunkett, Evan;  Cai, Zhengxu;  Qiu, Botong;  Wei, Tianran   |  收藏  |  浏览/下载：98/0  |  提交时间：2019/12/31 blend  chemical doping  density of states  polymer semiconductor  thermoelectrics   rGO decorated W doped BiVO4 novel material for sensing detection of trimethylamine 期刊论文  OAI收割 SENSORS AND ACTUATORS B-CHEMICAL, 2019, 卷号: 298, 页码: 9 作者:  Sun, Lixia;  Sun, Jianhua;  Han, Ning;  Liao, Dankui;  Bai, Shouli   |  收藏  |  浏览/下载：88/0  |  提交时间：2019/10/18 Semiconductor heterojunction  W-doping BiVO4  Reduced graphene oxide  Triethylamine sensor   Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文  OAI收割 Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16 作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu   |  收藏  |  浏览/下载：43/0  |  提交时间：2020/08/24 Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide   Photoelectric Properties of N Doped MgZnO Thin Films 期刊论文  OAI收割 Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 8, 页码: 956-960 作者:  P.-C.Zhao;  Z.-Z.Zhang;  B.Yao;  B.-H.Li;  X.-L.Li   |  收藏  |  浏览/下载：82/0  |  提交时间：2020/08/24 Thin films,Carrier mobility,II-VI semiconductors,Light emission,Magnesium,Molecular beam epitaxy,Molecular beams,Nitrogen,Photoelectricity,Sapphire,Semiconductor alloys,Semiconductor doping,Zinc oxide   Preparation of room-temperature ferromagnetic semiconductor based on graphdiyne-transition metal hybrid 期刊论文  OAI收割 2D MATERIALS, 2018, 卷号: 5, 期号: 3, 页码: 8 作者:  Zhang, Mingjia;  Wang, Xiaoxiong;  Sun, Huijuan;  Yu, Jiaojiao;  Wang, Ning   |  收藏  |  浏览/下载：40/0  |  提交时间：2018/12/21 graphdiyne  ferromagnetism  local magnetic moment  transition metal doping  ferromagnetic semiconductor   Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors 期刊论文  OAI收割 NANO LETTERS, 2018, 卷号: 18, 期号: 3, 页码: 1592-1599 作者:  Zhang, Lili;  Zheng, Qijing;  Xie, Yu;  Lan, Zhenggang;  Prezhdo, Oleg V.   |  收藏  |  浏览/下载：33/0  |  提交时间：2018/09/06 Semiconductor Doping  Electron-hole Recombination  Nonadiabaic Molecular Dynamics  Impurity-phonon Mode   Crystal imperfection modulation engineering for functionalization of wide band gap semiconductor radiation detector 期刊论文  iSwitch采集 Advanced electronic materials, 2018, 卷号: 4, 期号: 2, 页码: 8 作者:  Ji, Xu;  Chen, Liang;  Xu, Mengxuan;  Dong, Mei;  Yan, Kun 收藏  |  浏览/下载：60/0  |  提交时间：2019/04/23 Crystal imperfection modulation engineering  Electrochemical doping  H elimination  Wide band gap semiconductor  Zno   Crystal Imperfection Modulation Engineering for Functionalization of Wide Band Gap Semiconductor Radiation Detector 期刊论文  OAI收割 ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 2, 页码: 1700307 作者:  Xu, MX;  Dong, M;  Yan, K;  Wang, TY;  Liu, JD   |  收藏  |  浏览/下载：29/0  |  提交时间：2019/09/24 crystal imperfection modulation engineering  electrochemical doping  H elimination  wide band gap semiconductor  ZnO