机构

• 半导体研究所 [15]
• 长春应用化学研究所 [5]
• 金属研究所 [4]
• 长春光学精密机械与物... [2]
• 化学研究所 [2]
• 物理研究所 [1]
• 更多

采集方式

• OAI收割 [24]
• iSwitch采集 [8]

内容类型

• 期刊论文 [32]

发表日期

• 2021 [1]
• 2019 [2]
• 2011 [2]
• 2010 [5]
• 2009 [15]
• 2008 [1]
• 更多

学科主题

• 半导体材料 [4]
• 半导体物理 [3]
• Physics [1]

筛选

浏览/检索结果: 共32条，第1-10条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A Temperature-Modulated Gas Sensor Based on CdO-Decorated Porous ZnO Nanobelts for the Recognizable Detection of Ethanol, Propanol, and Isopropanol 期刊论文  OAI收割 IEEE SENSORS JOURNAL, 2021, 卷号: 21 作者:  Cai, Liu-Xin;  Miao, Guang-Ya;  Li, Gang;  Chen, Li;  Meng, Fan-Li   |  收藏  |  浏览/下载：63/0  |  提交时间：2022/01/10 Temperature sensors  Sensors  Temperature measurement  II-VI semiconductor materials  Gas detectors  Voltage measurement  Temperature distribution  Working temperature modulation  porous nanobelts  characteristic sensing behavior  VOCs  recognition   Point defects: key issues for -oxides wide-bandgap semiconductors development 期刊论文  OAI收割 Wuli Xuebao/Acta Physica Sinica, 2019, 卷号: 68, 期号: 16 作者:  X.-H.Xie;  B.-H.Li;  Z.-Z.Zhang;  L.Liu;  K.-W.Liu   |  收藏  |  浏览/下载：45/0  |  提交时间：2020/08/24 Wide band gap semiconductors,Arc lamps,Beryllia,Binding energy,Doping (additives),Electroluminescence,Energy gap,II-VI semiconductors,Ionization of gases,Ionization potential,Magnesia,Magnetic semiconductors,Point defects,Semiconductor doping,Semiconductor lasers,Semiconductor quantum wells,Ultraviolet lasers,Zinc oxide   Photoelectric Properties of N Doped MgZnO Thin Films 期刊论文  OAI收割 Faguang Xuebao/Chinese Journal of Luminescence, 2019, 卷号: 40, 期号: 8, 页码: 956-960 作者:  P.-C.Zhao;  Z.-Z.Zhang;  B.Yao;  B.-H.Li;  X.-L.Li   |  收藏  |  浏览/下载：82/0  |  提交时间：2020/08/24 Thin films,Carrier mobility,II-VI semiconductors,Light emission,Magnesium,Molecular beam epitaxy,Molecular beams,Nitrogen,Photoelectricity,Sapphire,Semiconductor alloys,Semiconductor doping,Zinc oxide   Effect of transverse electric field on helical edge states in a quantum spin-hall system 期刊论文  iSwitch采集 Applied physics letters, 2011, 卷号: 99, 期号: 22, 页码: 3 作者:  Liu, Genhua;  Zhou, Guanghui;  Chen, Yong-Hai 收藏  |  浏览/下载：36/0  |  提交时间：2019/05/12 Cadmium compounds  Ii-vi semiconductors  Mercury compounds  Quantum hall effect  Semiconductor quantum wells  Spin hall effect  Wide band gap semiconductors   Dopant concentration dependence of structure, optical, and magnetic properties of ZnO:Fe thin films 期刊论文  OAI收割 JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 314, 期号: 1, 页码: 30-33 作者:  Hong, Ruijin;  Wen, Herui;  Liu, Caiming;  Chen, Jinglin;  Liao, Jinsheng   |  收藏  |  浏览/下载：15/0  |  提交时间：2019/04/09 Doping  Physical Vapor Deposition  Oxides  Semiconductor Ii-vi Materials   Strong circular photogalvanic effect in zno epitaxial films 期刊论文  iSwitch采集 Applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: 3 作者:  Zhang, Q.;  Wang, X. Q.;  Yin, C. M.;  Xu, F. J.;  Tang, N. 收藏  |  浏览/下载：26/0  |  提交时间：2019/05/12 Ii-vi semiconductors  Photoconductivity  Photovoltaic effects  Semiconductor epitaxial layers  Spin-orbit interactions  Valence bands  Wide band gap semiconductors  Zinc compounds   Synthesis, optical properties, and superlattice structure of Cu(I)-doped CdS nanocrystals 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 3 作者:  Tang, Aiwei;  Yi, Luoxin;  Han, Wei;  Teng, Feng;  Wang, Yongsheng   |  收藏  |  浏览/下载：16/0  |  提交时间：2019/04/09 Cadmium Compounds  Copper  Doping Profiles  Ii-vi Semiconductors  Nanofabrication  Nanoparticles  Photoluminescence  Pyrolysis  Self-assembly  Semiconductor Doping  Semiconductor Superlattices   Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文  OAI收割 APPLIED PHYSICS LETTERS, 2010, 卷号: 96, 期号: 15, 页码: 151904 作者:  Yang, AL;  Song, HP;  Liang, DC;  Wei, HY;  Liu, XL 收藏  |  浏览/下载：51/0  |  提交时间：2016/06/29 alloying  annealing  electrical conductivity  excitons  II-VI semiconductors  magnesium compounds  MOCVD coatings  photoluminescence  positron annihilation  semiconductor thin films  vacancies (crystal)  wide band gap semiconductors  zinc compounds   Photoluminescence spectroscopy and positron annihilation spectroscopy probe of alloying and annealing effects in nonpolar m-plane ZnMgO thin films 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 96, 期号: 15, 页码: art. no. 151904 作者:  Jin P;  Wei HY;  Song HP 收藏  |  浏览/下载：195/32  |  提交时间：2010/05/04 alloying  annealing  electrical conductivity  excitons  II-VI semiconductors  magnesium compounds  MOCVD coatings  photoluminescence  positron annihilation  semiconductor thin films  vacancies (crystal)  wide band gap semiconductors  zinc compounds  SEMICONDUCTORS  EMISSION  ORIGIN  DIODES   Strong circular photogalvanic effect in ZnO epitaxial films 期刊论文  OAI收割 applied physics letters, 2010, 卷号: 97, 期号: 4, 页码: art. no. 041907 Zhang Q (Zhang Q.); Wang XQ (Wang X. Q.); Yin CM (Yin C. M.); Xu FJ (Xu F. J.); Tang N (Tang N.); Shen B (Shen B.); Chen YH (Chen Y. H.); Chang K (Chang K.); Ge WK (Ge W. K.); Ishitani Y (Ishitani Y.); Yoshikawa A (Yoshikawa A.) 收藏  |  浏览/下载：285/88  |  提交时间：2010/09/07 II-VI semiconductors  photoconductivity  photovoltaic effects  semiconductor epitaxial layers  spin-orbit interactions  valence bands  wide band gap semiconductors  zinc compounds