中国科学院机构知识库网格系统: 检索

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	Effect of argon flow on promoting boron doping for in-situ grown silicon nitride thin films containing silicon quantum dots 期刊论文 OAI收割 NANOTECHNOLOGY, 2017, 卷号: 28 作者: Liu, Jia; Liu, Bin; Zhang, Xisheng; Guo, Xiaojia; Liu, Shengzhong (Frank) \| 收藏 \| 浏览/下载：74/0 \| 提交时间：2017/10/29 Si Quantum Dot Silicon Nitride Thin Film Pecvd Boron-doping Argon Dilution
	H-2-Ar dilution for improved c-Si quantum dots in P-doped SiNx:H thin film matrix 期刊论文 OAI收割 APPLIED SURFACE SCIENCE, 2017, 卷号: 396, 页码: 235-242 作者: Liu, Jia; Zhang, Weijia; Liu, Shengzhong (Frank) \| 收藏 \| 浏览/下载：28/0 \| 提交时间：2019/06/20 C-si Quantum Dot Sinx:h Thin Film Phosphorus-doping Pecvd
	The role of silicon oxide layers in luminescence of ensembles of silicon quantum dots 期刊论文 OAI收割 Communications in Theoretical Physics, 2001, 卷号: 35, 期号: 3, 页码: 371-380 S. H. Wang; G. Y. Qin; S. F. Ren; G. G. Qin 收藏 \| 浏览/下载：22/0 \| 提交时间：2012/04/14 silicon oxide layer quantum dot luminescence porous silicon si nanocrystals photoluminescence mechanism states electroluminescence sio2-films films dlts
	Optical characterization of the Ge/Si (001) islands in multilayer structure 会议论文 OAI收割 asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001 Huang CJ; Zuo YH; Li C; Li DZ; Cheng BW; Luo LP; Yu JZ; Wang QM 收藏 \| 浏览/下载：18/0 \| 提交时间：2010/10/29 Ge/Si islands quantum dot band alignment PL SI/SI1-XGEX QUANTUM-WELLS STRANSKI-KRASTANOV GROWTH II BAND ALIGNMENT GE ISLANDS TEMPERATURE-DEPENDENCE PHOTOLUMINESCENCE LAYERS LUMINESCENCE ORGANIZATION MECHANISM
	Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures 会议论文 OAI收割 conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998 Si JJ; Yang QQ; Wang HJ; Wang QM 收藏 \| 浏览/下载：32/0 \| 提交时间：2010/10/29 Si/SiGe quantum dot electroluminescence photoluminescence