中国科学院机构知识库网格系统: 检索

浏览/检索结果: 共6条，第1-6条

帮助

条数/页：排序方式：
	Wetting behavior and reaction mechanism of molten Si in contact with silica substrate 期刊论文 OAI收割 CERAMICS INTERNATIONAL, 2019, 卷号: 45, 期号: 17, 页码: 21365-21372 作者: Wang, Qinghu; He, Gang; Deng, Shuxiang; Liu, Jun; Li, Xiaoyu \| 收藏 \| 浏览/下载：19/0 \| 提交时间：2020/03/24 Wetting behavior Reaction mechanism Multicrystalline silicon SiO2 substrate
	Micro-electro-mechanical systems capacitive ultrasonic transducer with a higher electromechanical coupling coefficient 期刊论文 OAI收割 Micro & Nano Letters, 2015, 卷号: 10, 期号: 10, 页码: 4 作者: Miao, J(苗静); Shen, WJ(沈文江); He, CD; Xue, CY; Xiong, JJ 收藏 \| 浏览/下载：84/0 \| 提交时间：2015/12/31 silicon elemental semiconductors silicon-on-insulator wafer bonding electromechanical effects ultrasonic transducers capacitive transducers micromechanical devices micromachining vibrations membranes finite element analysis reliability capacitance electromechanical coupling coefficient capacitive micromachined ultrasonic transducer impedance matching propagation medium microelectromechanical system capacitive ultrasonic transducer silicon on insulator wafer bonding optimum geometric dimensions membrane mechanical vibration electrical characteristics finite-element analysis operation mode device safety device reliability equivalent stress operation-collapse voltage bottom electrodes glass substrate surface parallel parasitic capacitance Si SiO2
	Ultrathin organic semiconductor films - Soft matter effect 期刊论文 OAI收割 advances in colloid and interface science, 2014, 卷号: 207, 期号: s, 页码: 332-346 Wang, Tong; Yan, Donghang 收藏 \| 浏览/下载：30/0 \| 提交时间：2015/03/25 PENTACENE THIN-FILMS WEAK EPITAXY GROWTH ELECTRONICS TRANSITION TRANSISTORS SUBSTRATE DEVICES LAYER SIO2
	4H-SiC基底Al_2O_3/SiO_2双层减反射膜的设计和制备期刊论文 OAI收割光学学报, 2008, 卷号: 28, 期号: 12, 页码: 2431, 2435 黄火林; 张峰; 吴正云; 齐红基; 姚建可; 范正修; 邵建达收藏 \| 浏览/下载：1194/189 \| 提交时间：2009/09/22 薄膜光学 Al2O3/SiO2双层减反射膜电子束蒸发 4H-SiC基底折射率 4H-SiC substrate Al2O3/SiO2 double-layer anti-reflection coatings Deposited layers Electron beam evaporation Layer coatings Layer thicknesses Physical thicknesses Reference wavelengths Reflection spectrums Scanning electron microscopes SEM images Single layers Thin film optics UV optoelectronic devices Wavelength selectivities
	The fabrication and study of ZnO-based thin film transistors (EI CONFERENCE) 会议论文 OAI收割 Asia Display 2007, AD'07, March 12, 2007 - March 16, 2007, Shanghai, China 作者: Wang C. 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/03/25 Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)[1-3] at about 360C. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is 80%. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.
	Fabrication and investigation of tungsten deposit on top and bottom surfaces of thin film substrate 期刊论文 OAI收割 Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, 2007, 卷号: 46, 期号: 9B, 页码: 6254-6257 Z. Q. Liu; K. Mitsuishi; K. Furuya 收藏 \| 浏览/下载：10/0 \| 提交时间：2012/04/13 electron-beam-induced deposition (EBID) nanofabrication tungsten microstructure TEM beam-induced deposition standing w-nanodendrites electron-microscope sio2 substrate growth-rate voltage devices