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	Identifying defect energy levels using dlts under different electron irradiation conditions 期刊论文 iSwitch采集 Nuclear science and techniques, 2017, 卷号: 28, 期号: 12, 页码: 7 作者: Guo, Chun-Sheng; Wang, Ruo-Min; Zhang, Yu-Wei; Pei, Guo-Xi; Feng, Shi-Wei 收藏 \| 浏览/下载：49/0 \| 提交时间：2019/04/23 Electron irradiation Deep level transient spectroscopy (dlts) Minority carrier life time Silicon diode
	A Tunnel Diode Body Contact Structure for High-Performance SOI MOSFETs 期刊论文 OAI收割 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 卷号: 59, 期号: 1, 页码: 101-107 Luo, JX; Chen, J; Wu, QQ; Chai, Z; Zhou, JH; Yu, T; Dong, YJ; Li, L; Liu, W; Qiu, C; Wang, X 收藏 \| 浏览/下载：16/0 \| 提交时间：2013/04/17 Body contact floating-body effects (FBEs) kink effect linear kink effect (LKE) partially depleted (PD) silicon-on-insulator (SOI) SOI MOSFETs tunnel diode tunnel diode body contact (TDBC)
	Ultrafast and low-power photonic crystal all-optical switching with resonant cavities 期刊论文 OAI收割 JOURNAL OF APPLIED PHYSICS, 2009, 卷号: 106, 期号: 8 Liu, Y; Qin, F; Zhou, F; Li, ZY 收藏 \| 浏览/下载：28/0 \| 提交时间：2013/09/23 BAND-GAP MATERIALS SILICON CHIP MICROCAVITY NONLINEARITIES DIODE LIGHT SLAB
	导模法生长晶体研究进展期刊论文 OAI收割硅酸盐学报, 2008, 卷号: 36, 期号: s1, 页码: 222, 227 杨新波; 李红军; 徐军; 程艳; 唐慧丽; 周国清收藏 \| 浏览/下载：1074/133 \| 提交时间：2009/09/24 Edge-defined film-fed crystal growth method (EFG) Laser diode (LD) Silicon crystal
	Design of an improved data signal timing for an amorphous silicon active-matrix organic LED display (EI CONFERENCE) 会议论文 OAI收割 ICO20: Display Devices and Systems, August 21, 2005 - August 26, 2005, Changchun, China 作者: Zhang Z.-W. 收藏 \| 浏览/下载：23/0 \| 提交时间：2013/03/25 The most critical issue in the design of an active matrix organic light emitting diode (AM-OLED) display pixel is the pixel to the pixel luminance uniformity. By substituting four-thin film transistor (TFT) pixel circuit for two-TFT pixel circuit the luminous uniformity has great improved but it requires more components than the two-TFT pixel circuit. There are some barriers needed to resolve to utilize hydrogenated amorphous silicon transistor to lit OLED such as low field effect mobility low output current and threshold voltage shift. In this article a two-a-Si:H TFT pixel circuit was designed which consisted of one named switching TFT and the other named driving TFT. The driving TFT gate line structure modified and a data signal timing improved were reported. The modified driving TFT can provide enough current about 30 microampere to lit OLED and the novel data signal timing can provide a constant current to OLED by restraining the driving TFT threshold voltage variation. In the novel data signal timing the control signals to the driving TFT gate include a data signal and a reverse data signal. The signals alteration is performed either at a frame rate or at a line rate. By experiments the driving TFT output current value is plotted as a function of the time in different reversed voltage value. When the magnitude of the positive data signal and the negative data signal is equal the variety of Vth is smallest about 1.28V after a fixed stressing time of 1.33104min which shows the novel data signal timing can improved the driving TFT output-input current stability.
	Experimental study of the organic light emitting diode with a p-type silicon anode 期刊论文 OAI收割 Thin Solid Films, 2006, 卷号: 496, 期号: 2, 页码: 665-668 G. L. Ma; A. G. Xu; G. Z. Ran; Y. P. Qiao; B. R. Zhang; W. X. Chen; L. Dai; G. G. Qin 收藏 \| 浏览/下载：23/0 \| 提交时间：2012/04/14 silicon oxide organic light emitting diode electrical properties and measurement silicon anode conjugated oligomer film porous silicon interface devices electroluminescence performance electrodes growth oxide gan
	Electrophoretic deposition and field emission properties of patterned carbon nanotubes (EI CONFERENCE) 会议论文 OAI收割 Zhao H.; H S.; Z L.; G Y.; Y J. 收藏 \| 浏览/下载：21/0 \| 提交时间：2013/03/25 Patterned carbon nanotubes on silicon substrates were obtained using electrophoretic method. The carbon nanotubes migrated towards the patterned silicon electrode in the electrophoresis suspension under the applied voltage. The carbon nanotubes arrays adhered well on the silicon substrates. The surface images of carbon nanotubes were observed by scanning electron microscopy. The field emission properties of the patterned carbon nanotubes were tested in a diode structure under a vacuum pressure below 5 10-4 Pa. The measured emission area was about 1.0 mm2. The emission current density up to 30 mA/cm2 at an electric field of 8 V/m has been obtained. The deposition of patterned carbon nanotubes by electrophoresis is an alternative method to prepare field emission arrays. 2005 Elsevier B.V. All rights reserved.
	Patterned deposition and field emission properties of carbon nanotubes by electrophoresis (EI CONFERENCE) 会议论文 OAI收割 IVESC2004 - 5th International Vacuum Electron Sources Conference Proceedings, September 6, 2004 - September 10, 2004, Beijing, China 作者: Li Z.; Li Z.; Song H. 收藏 \| 浏览/下载：27/0 \| 提交时间：2013/03/25 Multi-wall carbon nanotubes were deposited on the patterned silicon substrates using electrophoretic deposition. The surface images of carbon nanotubes on substrate were observed by scanning electron microscopy. Field emission properties have been tested with a diode structure in a vacuum chamber below 510-4 Pa. The emission area measured is 1.0mm 2. Emission current density up to 30mA/cm2 at an electric field of 8V/m has been obtained. Patterned deposition of carbon nanotubes by electrophoresis is a potential method to prepare field emission arrays. 2004 IEEE.
	Study on variable capacitance diode of (p)nc-Si : H/(n)c-Si heterojunction 期刊论文 OAI收割 vacuum, 2003, 卷号: 71, 期号: 4, 页码: 465-469 Wei WS; Wang TM; Zhang CX; Li GH; Li YX 收藏 \| 浏览/下载：454/4 \| 提交时间：2010/08/12 nc-Si : H film (p)nc-Si : H/(n)c-Si heterojunction variable capacitance diode NANOCRYSTALLINE SILICON FILMS ELECTRICAL CHARACTERIZATION CONDUCTION MECHANISM SPECTROSCOPY STATES