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Chinese Academy of Sciences Institutional Repositories Grid
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浏览/检索结果: 共11条,第1-10条 帮助

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MEIFUITE, A NEW FERROUS PHYLLOSILICATE MINERAL WITH MODULATED TETRAHEDRAL SHEETS SIMILAR TO MINNESOTAITE 期刊论文  OAI收割
CLAYS AND CLAY MINERALS, 2021, 页码: 16
作者:  
Jin, Shiyun;  Li, Xiaochun;  Hobbs, Franklin;  Guggenheim, Stephen;  Xu, Huifang
  |  收藏  |  浏览/下载:35/0  |  提交时间:2021/11/01
Chemical interaction dictated energy level alignment at the N,N '-dipentyl-3,4,9,10-perylenedicarboximide/CH3NH3PbI3 interface 期刊论文  OAI收割
APPLIED PHYSICS LETTERS, 2018, 卷号: 113, 期号: 11, 页码: -
作者:  
Zhang, XN;  Su, ZH;  Zhao, B;  Yang, YG;  Xiong, YM
  |  收藏  |  浏览/下载:37/0  |  提交时间:2019/12/17
A broadband KU-band microstrip reflectarray antenna using single-layer fractal elements 期刊论文  OAI收割
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2016, 卷号: 58, 期号: 3, 页码: 658-662
作者:  
Xue, Fei;  Wang, Hong-Jian;  Yi, Min;  Liu, Guang
收藏  |  浏览/下载:26/0  |  提交时间:2016/03/07
Syntheses, Structure, and Properties of Mixed Cp-Amidinate Rare-Earth-Metal(III) Complexes 期刊论文  OAI收割
organometallics, 2014, 卷号: 33, 期号: 6, 页码: 1374-1381
Liu, Jun-Feng; Pan, Fu-Xing; Yao, Shuang; Min,Xue; Cuo,Dongmei; Sun,Zhong-Ming
收藏  |  浏览/下载:30/0  |  提交时间:2015/10/19
Optimal windbreak design for wind-erosion in high-speed railway 会议论文  OAI收割
2nd SREE Conference on Modeling and Computation in Engineering, CMCE 2013, Hong Kong, Hong kong, June 22, 2013 - June 23, 2013
作者:  
Xi Y;  Mao J;  Gao L;  Yang GW(杨国伟)
收藏  |  浏览/下载:31/0  |  提交时间:2017/05/27
Syntheses and characterizations of two new pillared-layer coordination polymers constructed from lanthanides and mixed O-donor ligands 期刊论文  OAI收割
Inorganic Chemistry Communications, 2010, 卷号: 13, 期号: 3, 页码: 388-391
X. Lin, T. F. Liu, J. X. Lin, H. X. Yang, J. Lu, B. Xu and R. Cao
收藏  |  浏览/下载:33/0  |  提交时间:2012/11/02
Ordered ultra thin ZnO films on metal substrate 期刊论文  OAI收割
APPLIED SURFACE SCIENCE, 2009, 卷号: 255, 期号: 22, 页码: 9015
Guo, DH; Xue, MS; Guo, QL; Wu, KH; Guo, JD; Wang, EG
收藏  |  浏览/下载:18/0  |  提交时间:2013/09/24
The spectral feature analysis of semiconductor thin disk laser (EI CONFERENCE) 会议论文  OAI收割
Optoelectronic Materials and Devices II, November 2, 2007 - November 5, 2007, Wuhan, China
作者:  
Li J.;  Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Li J.
收藏  |  浏览/下载:24/0  |  提交时间:2013/03/25
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of semiconductor disk laser  and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperature. We can see that: with increasing pump power  the thermal effects of the gain material becomes seriously and causes the saturation of carrier lifetime  so the electron-hole pair created in the absorbtion layer have no enough time to rate to one of the wells  and the non-radiative recombination happens in the barrier. When the thermal effects becomes stronger  the chip will not lasing. This phenomenon is from the smaller energy offset between barrier and quantum well. We optimize the original structure design and experimental technology. A non-absorbing AlGaAs layer who is transparent to the pumping and laser wavelength is added to confine the carriers in the quantum wells. At the same time a DBR with double reflecting band is induced to improve the absorbing efficiency of the pumping light. The single QW is replaced by the three narrow QWs  This three QWs structure can add the quantum state of QW  increase the recombination probability of carriers in the QWs and reduce the heat effect. The chemical etch equipment is also improved to control the surface unevenness to be within 50 nm.  
Theoretical analysis of 980nm high power Vertical External-cavity Surface-emitting Semiconductor Laser (VECSEL) (EI CONFERENCE) 会议论文  OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者:  
Wang L.-J.;  Wang L.-J.;  Ning Y.-Q.;  Qin L.
收藏  |  浏览/下载:23/0  |  提交时间:2013/03/25
By using bottom-emitting structure  we will develop laser diode (LD) pumped 980 nm VECSEL with active region of InGaAs/GaAsP/AlGaAs system. Because the thickness of barrier layer and absorption layer exceed that of quantum well  single well approximation model (KP method) can be used to calculate the band structure of VECSEL. The Schrodinger equation of finite deep potential well can be adopted to calculate the energy level structures of electron  heavy and light holes. According to the transition selection rule  we theoretically obtained the emitting wavelength of VECSEL and calculated quasi-Femi energy of valence band and conduction band based on the analysis of energy level structure of electron and holes. By analyzing the gain of strained quantum wells  we calculated the gain of VECSEL using transition matrix elements of electron  heavy and light holes. We give out the threshold gain  output power and other characteristic parameters. We will study the configuration of VECSEL and pumping scheme. We designed external cavity mirror  active region and bottom-emitting structure. A LD-pumped vertical external cavity surface-emitting laser whose output power is greater than 1.0 W can be predicted.