中国科学院机构知识库网格系统: 检索

A modified structure with asymmetric and doping barrier interlayers of GaAs-based laser diodes with both small vertical divergence angle and low threshold current 期刊论文 OAI收割
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 80, 页码: 7
作者: Li, X; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS

收藏 | 浏览/下载：18/0 | 提交时间：2015/12/31

GaAs laser diodes Threshold current Divergence angle

Electrically pumped organic laser device with a coupled microcavity structure (EI CONFERENCE) 会议论文 OAI收割
Organic Light Emitting Materials and Devices XVI, August 12, 2012 - August 15, 2012, San Diego, CA, United states
作者: Li Y.; Li Y.; Li Y.; Li Y.; Lin J.

收藏 | 浏览/下载：21/0 | 提交时间：2013/03/25

Lasing action in electrically pumped organic laser device is demonstrated. A DCM laser dye doped Alq film serves as the active layer. High reflective and low loss electrical contacts are used to form a high quality factor coupled microcavity. Single longitudinal cavity mode is obtained at 618 nm with a threshold current density of 612 mAcm-2 under room temperature continuous wave operation. 2012 SPIE.

The ship-borne infrared searching and tracking system based on the inertial platform (EI CONFERENCE) 会议论文 OAI收割
International Symposium on Photoelectronic Detection and Imaging 2011: Advances in Infrared Imaging and Applications, May 24, 2011 - May 24, 2011, Beijing, China
作者: Li Y.; Zhang H.; Zhang H.; Li Y.; Li Y.

收藏 | 浏览/下载：35/0 | 提交时间：2013/03/25

As a result of the radar system got interferenced or in the state of half silent it can cause the guided precision drop badly In the modern electronic warfare therefore it can lead to the equipment depended on electronic guidance cannot strike the incoming goals exactly. It will need to rely on optoelectronic devices to make up for its shortcomings but when interference is in the process of radar leading especially the electro-optical equipment is influenced by the roll pitch and yaw rotation it can affect the target appear outside of the field of optoelectronic devices for a long time so the infrared optoelectronic equipment can not exert the superiority and also it cannot get across weapon-control system "reverse bring" missile against incoming goals. So the conventional ship-borne infrared system unable to track the target of incoming quickly the ability of optoelectronic rivalry declines heavily.Here we provide a brand new controlling algorithm for the semi-automatic searching and infrared tracking based on inertial navigation platform. Now it is applying well in our XX infrared optoelectronic searching and tracking system. The algorithm is mainly divided into two steps: The artificial mode turns into auto-searching when the deviation of guide exceeds the current scene under the course of leading for radar.When the threshold value of the image picked-up is satisfied by the contrast of the target in the searching scene the speed computed by using the CA model Least Square Method feeds back to the speed loop. And then combine the infrared information to accomplish the closed-loop control of the infrared optoelectronic system tracking. The algorithm is verified via experiment. Target capturing distance is 22.3 kilometers on the great lead deviation by using the algorithm. But without using the algorithm the capturing distance declines 12 kilometers. The algorithm advances the ability of infrared optoelectronic rivalry and declines the target capturing time by using semi-automatic searching and reliable capturing-tracking when the lead deviation of the radar is great. 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

ZnO-Bi2O3-based varistor ceramics prepared by direct high-energy ball milling of the dopants 期刊论文 OAI收割
proceedings of 2011 international conference on electronic and mechanical engineering and information technology, emeit 2011, 2011, 卷号: 2, 页码: 713-716
Xu, Dong; Wang, Biao; Li, Mingshuang; Ye, Xiao

收藏 | 浏览/下载：83/0 | 提交时间：2012/06/14

Ceramic materials Current voltage characteristics Electric properties High energy physics Information technology Mechanical engineering Mechanical properties Microstructure Milling(machining) Milling machines Threshold voltage Varistors Zinc oxide

The optical gain and radiative current density of GaInNAs/GaAs/AlGaAs separate confinement heterostructure quantum well lasers 期刊论文 OAI收割
Journal of Applied Physics, 2010, 卷号: 107, 期号: 1
S. D. Wu, Y. G. Cao, S. Tomic and F. Ishikawa

收藏 | 浏览/下载：20/0 | 提交时间：2012/11/02

aluminium compounds energy gap gallium arsenide gallium compounds III-V semiconductors indium compounds quantum well lasers valence bands waveguide lasers threshold-current-density band parameters tensile strain temperature subbands semiconductors performance spectra leakage diode

Total ionizing dose effects and annealing behavior for domestic VDMOS devices 期刊论文 OAI收割
Journal of Semiconductors, 2010, 卷号: 31, 期号: 4
Gao; Yu; Ren; Liu; Wang; Sun; Cui; Bo1; Xuefeng1; Diyuan1; Gang3; Yiyuan1; Jing1; Jiangwei1; 2; 2; 2; 2; 2; 2; 4; 4; 4

收藏 | 浏览/下载：18/0 | 提交时间：2011/08/19

Drain current - Electric breakdown - Experiments - Field effect transistors - Ionizing radiation - Irradiation - Radiation effects - Threshold voltage - Annealing behavior - Annealing time - Bias conditions - Breakdown voltage - Drain bias voltage - Electrical parameter - N-channel - On-state resistance - Preirradiation - Total dose - Total dose effect - Total ionizing dose effects - VDMOS device - VDMOS devices

High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文 OAI收割
chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801
Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo)

收藏 | 浏览/下载：159/30 | 提交时间：2010/04/13

THRESHOLD CURRENT ROOM-TEMPERATURE DEPENDENCE PHOTOLUMINESCENCE

High Characteristic Temperature InGaAsP/InP Tunnel Injection Multiple-Quantum-Well Lasers 期刊论文 OAI收割
chinese physics letters, 2010, 卷号: 27, 期号: 11, 页码: art. no. 114201
Wang Y (Wang Yang); Qiu YP (Qiu Ying-Ping); Pan JQ (Pan Jiao-Qing); Zhao LJ (Zhao Ling-Juan); Zhu HL (Zhu Hong-Liang); Wang W (Wang Wei)

收藏 | 浏览/下载：32/0 | 提交时间：2010/12/05

AUGER RECOMBINATION THRESHOLD CURRENT DEPENDENCE DEVICE

Temperature-dependent modulation characteristics for 1.3 mu m InAs/GaAs quantum dot lasers 期刊论文 OAI收割
journal of applied physics, 2010, 卷号: 107, 期号: 1, 页码: art. no. 013102
Xu PF (Xu Peng-Fei); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Cao YL (Cao Yu-Lian); Gu; YX (Gu Yong-Xian); Liu Y (Liu Yu); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo)

收藏 | 浏览/下载：214/54 | 提交时间：2010/04/13

energy states optical modulation quantum dot lasers THRESHOLD CURRENT WELL GAIN

High-temperature continuous-wave single-mode operation of 1.3 mu m p-doped inas-gaas quantum-dot vcsels 期刊论文 iSwitch采集
Ieee photonics technology letters, 2009, 卷号: 21, 期号: 17, 页码: 1211-1213
作者: Xu, D. W.; Yoon, S. F.; Tong, C. Z.; Zhao, L. J.; Ding, Y.

收藏 | 浏览/下载：30/0 | 提交时间：2019/05/12

Quantum dot (qd) Single-mode Thermal stability Threshold current Vertical-cavity surface-emitting lasers (vcsels)