中国科学院机构知识库网格系统: 检索

Electrically pumped organic laser device with a coupled microcavity structure (EI CONFERENCE) 会议论文 OAI收割
Organic Light Emitting Materials and Devices XVI, August 12, 2012 - August 15, 2012, San Diego, CA, United states
作者: Li Y.; Li Y.; Li Y.; Li Y.; Lin J.

收藏 | 浏览/下载：21/0 | 提交时间：2013/03/25

Lasing action in electrically pumped organic laser device is demonstrated. A DCM laser dye doped Alq film serves as the active layer. High reflective and low loss electrical contacts are used to form a high quality factor coupled microcavity. Single longitudinal cavity mode is obtained at 618 nm with a threshold current density of 612 mAcm-2 under room temperature continuous wave operation. 2012 SPIE.

The optical gain and radiative current density of GaInNAs/GaAs/AlGaAs separate confinement heterostructure quantum well lasers 期刊论文 OAI收割
Journal of Applied Physics, 2010, 卷号: 107, 期号: 1
S. D. Wu, Y. G. Cao, S. Tomic and F. Ishikawa

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aluminium compounds energy gap gallium arsenide gallium compounds III-V semiconductors indium compounds quantum well lasers valence bands waveguide lasers threshold-current-density band parameters tensile strain temperature subbands semiconductors performance spectra leakage diode

Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy 期刊论文 OAI收割
chinese physics letters, 2009, 卷号: 26, 期号: 1, 页码: art. no. 014214
Wang HL; Wu DH; Wu BP; Ni HQ; Huang SS; Xiong YH; Wang PF; Han Q; Niu ZC; Tangring I; Wang SM

收藏 | 浏览/下载：183/53 | 提交时间：2010/03/08

THRESHOLD CURRENT-DENSITY

1310 nm GaInNAs triple quantum well laser with 13 GHz modulation bandwidth 期刊论文 OAI收割
electronics letters, 2009, 卷号: 45, 期号: 7, 页码: 356-u23
Zhao H; Haglund A; Westburgh P; Wang SM; Gustavsson JS; Sadeghi M; Larsson A

收藏 | 浏览/下载：91/31 | 提交时间：2010/03/08

THRESHOLD-CURRENT-DENSITY RANGE

A novel bottom-emitting vcsel's one-dimension array (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices III, October 27, 2008 - October 30, 2008, Hangzhou, China
作者: Wang L.; Wang L.; Wang L.; Liu Y.; Liu Y.

收藏 | 浏览/下载：23/0 | 提交时间：2013/03/25

A novel 980nm bottom-emitting VCSELs array with high power density and good beam property of Gaussian far-field distribution is reported. This array is composed of 5 symmetrically-arranged elements of 200m 150m and 100m-diameter with the center spacings of 300m and 250m respectively. The maximum power is 880mW at a current of 4A corresponding to lKW/cm2 average optical power density. The differential resistance is 0.09 with a threshold of 0.56A. The novel array is compared with a 300m-aperture-size single device and a 44 2-D array with 50m element aperture size and 250m centre spacing. The three devices have the same lasing area. The conclusion is that the novel array is better in the property of output power threshold current lasing spectra far-field distribution etc. 2008 SPIE.

A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD 期刊论文 OAI收割
semiconductor science and technology, 2006, 卷号: 21, 期号: 3, 页码: 306-310
Zhang RY; Wang W; Zhou F; Wang BJ; Wang LF; Bian J; Zhao LJ; Zhu HL; Jian SS

收藏 | 浏览/下载：58/0 | 提交时间：2010/04/11

LINEWIDTH ENHANCEMENT FACTOR THRESHOLD CURRENT-DENSITY DIFFERENTIAL GAIN MQW LASERS

Fabrication and electron emission of carbon microtubes (EI CONFERENCE) 会议论文 OAI收割
Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, July 10, 2005 - July 14, 2005, Oxford, United kingdom
作者: Liu L.; Liu L.; Wang W.; Wang W.

收藏 | 浏览/下载：38/0 | 提交时间：2013/03/25

Carbon nanotubes have been attracting attention because of their unique physical properties and their application potential for field emission cathode. Carbon nanotubes possess the following properties favorable for field emission material such as a high aspect ratio and sharp tip high chemical stability high mechanical strength stable at high temperature. Some research works on carbon nanotubes field emitter and field emission display have been reported. Here a kind of carbon microtubes and its field emission properties are introduced. They have some different properties with carbon nanotubes and the density is lower than carbon nanotubes bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes are reported too. Carbon microtubes film is synthesized in liquid by electrolysis. The graphite plate is as anode and n-silicon substrate with resistivity of 4-8 cm is as cathode. The electrolysis current is about 5-8mA/cm2 and applied voltage is 800-1500V. Temperatures of the methanol base solution is maintained at 60C in process of deposition of carbon microtubes. Carbon microtubes film is observed by scanning electron microscopy(SEM) as shown in fig.1(a b). The wall's thickness of carbon microtube is about 60nm. The diameter of carbon microtube is about 0.8 m. Raman spectrum of carbon microtubes film shows the two peaks at 1342and 1560cm-1. The field emission properties of carbon microtubes are measured in high vacuum chamber(10-5Pa). The emission area of carbon microtubes is 0.5cm 0.5cm. The threshold of field emission of the carbon microtubes film is about 3.6V/ m. Field emission property of carbon microtubes film is shown in fig.2. Another when the electric field between anode and cathode is 10V/ m the electric field distribution on single carbon microtube is also given after calculation according to electric field theory. Fig 3 shows that electric field distribution vertical section on the of single carbon microtube top with 2 m of highness. These results may help us to understand field emission properties of carbon microtubes. According to research results it is found that liquidoid synthesis is simple method to produce carbon microtubes cold cathode material and the carbon microtubes have better field emission properties. 2005 IEEE.

High-power InGaAs/GaAs VCSEL's two-dimension arrays (EI CONFERENCE) 会议论文 OAI收割
ICO20: Lasers and Laser Technologies, August 21, 2005 - August 26, 2005, Changchun, China
作者: Liu Y.; Wang L.-J.; Wang L.-J.; Liu Y.; Liu Y.

收藏 | 浏览/下载：26/0 | 提交时间：2013/03/25

Selectively oxidized InGaAs/GaAs vertical -cavity surface-emitting lasers (VCSEL) array at an emission wavelength of 980nm was reported. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in 1 KW/cm2 average optical power density. The device threshold current is 1.32A The lasing peak wavelength is 981.9 nm the full width at half-maximum is 0.7 nm and the far-field divergence angle is about 17.The characteristics of a single device with a active region diameter of 800m is compared with that of a 2-D array with active region diameter of individual clement of 200m. These two kinds of devices have the same total lasing area. At the same current injection the single device has a higher threshold and a higher output power than the array. The red shift of single device is more obvious than that of the array's.

High-power InGaAs VCSEL's single devices and 2-D arrays (EI CONFERENCE) 会议论文 OAI收割
Optoelectronic Materials and Devices for Optical Communications, November 7, 2005 - November 10, 2005, Shanghai, China
作者: Sun Y.; Wang L.; Wang L.; Wang L.; Liu Y.

收藏 | 浏览/下载：21/0 | 提交时间：2013/03/25

We report on bottom-emitting vertical-cavity surface-emitting lasers (VCSEL's) and laser arrays providing high output powers in the 980-nm wavelength regime. Single devices with active diameters of 500 m show high output powers of 1.95 W at room temperature. Its threshold current is 510 mA and the maximum spatially averaged optical power density is 0.93 kW/cm2. A 16 elements array with 200m aperture size (250m center spacing) of individual elements shows a CW output power of 1.21 W at room temperature resulting in a average optical power density of 1KW/cm2. The threshold current of the array is 1.32A and the lasing peak wavelength is 981.9 nm. The distinction of emission spectrums between the single device and the array is discussed.

Low threshold current density 1.5 mu m strained-mqw laser by n-type modulation-doping 期刊论文 iSwitch采集
Pricm 5: the fifth pacific rim international conference on advanced materials and processing, pts 1-5, 2005, 卷号: 475-479, 页码: 1663-1667
作者: Zhang, RY; Wang, W; Zhou, F; Bian, J; Zhao, LJ

收藏 | 浏览/下载：25/0 | 提交时间：2019/05/12

1.5 mu m ingaasp/ingaasp N-type modulation-doping mqw Low threshold current density