机构

• 半导体研究所 [3]
• 物理研究所 [1]
• 长春光学精密机械与物... [1]

采集方式

• OAI收割 [5]

内容类型

• 期刊论文 [4]
• 会议论文 [1]

发表日期

• 2006 [1]
• 2001 [1]
• 1998 [2]
• 1997 [1]

学科主题

• 半导体物理 [3]

筛选

浏览/检索结果: 共5条，第1-5条 帮助 条数/页： 5101520253035404550556065707580859095100 排序方式： 请选择题名升序题名降序提交时间升序提交时间降序作者升序作者降序发表日期升序发表日期降序 A Novel data line sharing method for high pixel density LCoS microdisplays (EI CONFERENCE) 会议论文  OAI收割 IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference, August 22, 2006 - August 25, 2006, Daegu, Korea, Republic of Yulong S.; Zhihua L. 收藏  |  浏览/下载：26/0  |  提交时间：2013/03/25 A new data line reduction driving method was developed for high pixel density LCoS microdisplays. Its pixel structures and its corresponding gate line waveform were proposed  too. This idea can fulfill the increasing demand for higher resolution LCoS. In this method  no additional AC power is dissipated  and no more horizontal line time is needed. So this method can be applied to the high resolution microdisplay devices. It prefers being applied to the reflective liquid crystal on silicon microdisplays because of the pixel structure asymmetry and PMOS transistor switches used.   Memory and tunneling effects in metal-semiconductor-metal contacts 期刊论文  OAI收割 PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2001, 卷号: 5-6, 页码: 129 Li, HW; Wang, TH 收藏  |  浏览/下载：18/0  |  提交时间：2013/09/18 FIELD-EFFECT TRANSISTOR  INAS QUANTUM DOTS  TEMPERATURE-DEPENDENCE  PHOTODIODE STRUCTURES  SCHOTTKY DIODES   Observation of the third subband population in modulation-doped InGaAs/InAlAs heterostructure 期刊论文  OAI收割 chinese physics letters, 1998, 卷号: 15, 期号: 1, 页码: 57-59 作者:  Xu B 收藏  |  浏览/下载：50/0  |  提交时间：2010/08/12 MULTIPLE-QUANTUM WELLS  PHOTOLUMINESCENCE SPECTROSCOPY  TRANSISTOR STRUCTURES  ELECTRON  TEMPERATURE  DENSITY   Photoluminescence study of InxGa1-xAs/InyAl1-yAs one-side-modulation-doped asymmetric step quantum wells 期刊论文  OAI收割 solid state communications, 1998, 卷号: 106, 期号: 12, 页码: 811-814 作者:  Xu B 收藏  |  浏览/下载：64/0  |  提交时间：2010/08/12 quantum wells  semiconductors  electronic band structure  luminescence  TRANSISTOR STRUCTURES  OPTICAL-TRANSITIONS  MASS  RENORMALIZATION  HETEROJUNCTIONS  LUMINESCENCE  DENSITY  FERMI-EDGE SINGULARITY   The third subband population in modulation-doped InGaAs/InAlAs heterostructures 期刊论文  OAI收割 journal of applied physics, 1997, 卷号: 82, 期号: 12, 页码: 6107-6109 作者:  Xu B 收藏  |  浏览/下载：43/0  |  提交时间：2010/08/12 MULTIPLE-QUANTUM WELLS  PHOTOLUMINESCENCE SPECTROSCOPY  TRANSISTOR STRUCTURES  ELECTRON  TEMPERATURE  DENSITY